Heat treatment method and heat treatment apparatus for heating substrate by irradiating substrate with light

• US 9,343,313 B2
• Filed: 03/12/2012
• Issued: 05/17/2016
• Est. Priority Date: 03/23/2011
• Status: Active Grant

• Current Assignee: SCREEN Holdings Co., Ltd.
• Original Assignee: SCREEN Holdings Co., Ltd.
• Inventors: Fuse, Kazuhiko, Kato, Shinichi, Yokouchi, Kenichi
• Primary Examiner(s): WILCZEWSKI, MARY A
• Application Number:
  US13/417,498
• Publication Number:
  US 20120244725A1
• Time in Patent Office: 1,527 Days
• Field of Search: 438/530, 438/795, 438/799, 257/E21.147, 257/E21.333, 257/E21.335, 257/E21.336, 257/E21.347
• US Class Current: 1/1
• CPC Class Codes: F27B 17/0025 Especially adapted for treating semiconductor wafers
• CPC Class Codes: H01L 21/02694 Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing
• CPC Class Codes: H01L 21/2253 by ion implantation
• CPC Class Codes: H01L 21/26513 of electrically active species
• CPC Class Codes: H01L 21/2686 using incoherent radiation
• CPC Class Codes: H01L 21/324 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/20 - H01L21/288 and H01L21/302 - H01L21/322 take precedence
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H01L 21/67248 Temperature monitoring
• CPC Class Codes: H01L 21/68707 the wafers being placed on a robot blade, or gripped by a gripper for conveyance
• CPC Class Codes: H01L 21/68742 characterised by a lifting arrangement, e.g. lift pins

Abstract

First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is performed to increase the temperature of a front surface of a semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. This achieves the activation of the impurities. Subsequently, second irradiation which gradually decreases the emission output from the maximum value over a time period in the range of 3 to 50 milliseconds is performed to maintain the temperature of the front surface within a ±25° C. range around the target temperature for a time period in the range of 3 to 50 milliseconds. This prevents the occurrence of process-induced damage while suppressing the diffusion of the impurities.

Claims

1. A method of heating a substrate by irradiating the substrate with light, to thereby activate impurities, the method comprising the steps of:

(a) heating a substrate to a predetermined preheating temperature;

(b) irradiating said substrate with light, for a time period in the range of 1 to 20 milliseconds, in a manner so that the temperature of a front surface of said substrate keeps increasing from said preheating temperature until it reaches a maximum target temperature; and

(c) irradiating said substrate with light to maintain the temperature of the front surface of said substrate within a ±

25°

C. range around said maximum target temperature for a time period in the range of 3 to 50 milliseconds, said step (c) being performed after said step (b), wherein said maximum target temperature is the highest temperature reached by said substrate throughout said heating method, except that it may exceed same during said irradiating step (c) but not more than by 25°

C.;

wherein said substrate is irradiated with a flash of light using a switching element to intermittently supply electrical charges from a capacitor to a flash lamp to control an emission output from said flash lamp in said step (b) and in said step (c);

a plurality of pulses which are longer in pulse width than pulse intervals are applied to a gate of said switching element in said step (b); and

a plurality of pulses which are shorter in pulse width than pulse intervals are applied to the gate of said switching element in said step (c).

2. The method according to claim 1, wherein

said preheating temperature is in the range of 300°

to 800°

C., and

said maximum target temperature is in the range of 1000°

to 1400°

C.

3. The method according to claim 2, wherein

said maximum target temperature is a temperature where the activation of said impurities is achieved.