Light emitting diode chip having distributed bragg reflector and method of fabricating the same

  • US 9,343,631 B2
  • Filed: 01/27/2015
  • Issued: 05/17/2016
  • Est. Priority Date: 11/13/2009
  • Status: Active Grant
First Claim
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1. A light-emitting diode chip configured to emit light of a first wavelength range and light of a second wavelength range, comprising:

  • a substrate;

    a light-emitting structure disposed on a first surface of the substrate, the light-emitting structure comprising an active layer disposed between a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, and configured to emit light of the first wavelength range;

    first and second distributed Bragg reflectors (DBRs) disposed on a second surface of the substrate; and

    a phosphor disposed on the light-emitting structure,wherein;

    the first DBR is disposed closer to the substrate than the second DBR;

    the first wavelength range comprises a blue wavelength range;

    light of the second wavelength range is converted by the phosphor;

    the first DBR comprises a higher reflectivity for light of the second wavelength range than for light of the first wavelength range; and

    the second DBR comprises a higher reflectivity for light of the first wavelength range than for light of the second wavelength range.

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