Semiconductor device with transistor local interconnects

  • US 9,355,910 B2
  • Filed: 12/13/2011
  • Issued: 05/31/2016
  • Est. Priority Date: 12/13/2011
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate;

    a first transistor and a second transistor disposed on said substrate;

    each of said transistors comprising a source, a drain, and a gate;

    a first CB layer electrically connected to said gate of said first transistor;

    a second CB layer electrically connected to said gate of said second transistor; and

    a CA layer extending longitudinally between a first end and a second end;

    whereinsaid first CB layer is electrically connected to said first end of said CA layer;

    said second CB layer is electrically connected to said second end of said CA layer;

    said gate of said first transistor extends longitudinally along a first line and said gate of said second transistor extends longitudinally along a second line, wherein said first and second lines are generally parallel to one another and spaced apart from one another; and

    said CA layer extends generally parallel to said lines and generally perpendicular to said first CB layer and said second CB layer; and

    wherein said first CB layer extends longitudinally beyond said gate of said first transistor and/or said second CB layer extends longitudinally beyond said gate of said second transistor.

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