Methods and apparatus for synchronizing RF pulses in a plasma processing system

• US 9,368,329 B2
• Filed: 07/17/2012
• Issued: 06/14/2016
• Est. Priority Date: 02/22/2012
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Valcore, John C. Jr., Lyndaker, Bradford J., Singh, Harmeet
• Primary Examiner(s): Lund, Jeffrie R
• Assistant Examiner(s): Yu, Yuechuan
• Application Number:
  US13/550,719
• Publication Number:
  US 20130214828A1
• Time in Patent Office: 1,428 Days
• US Class Current: 1/1
• CPC Class Codes: H01J 37/32146 Amplitude modulation, includes pulsing
• CPC Class Codes: H01J 37/32174 Circuits specially adapted for controlling the RF discharge
• CPC Class Codes: H01J 37/32183 Matching circuits

Abstract

A synchronized pulsing arrangement for providing at least two synchronized pulsing RF signals to a plasma processing chamber of a plasma processing system is provided. The arrangement includes a first RF generator for providing a first RF signal. The first RF signal is provided to the plasma processing chamber to energize a plasma therein, the first RF signal representing a pulsing RF signal. The arrangement also includes a second RF generator for providing a second RF signal to the plasma processing chamber. The second RF generator has a sensor subsystem for detecting values of at least one parameter associated with the plasma processing chamber that reflects whether the first RF signal is pulsed high or pulsed low and a pulse controlling subsystem for pulsing the second RF signal responsive to the detecting the values of at least one parameter.

Claims

1. A synchronized pulsing arrangement comprising:

a first RF generator for providing a first RF signal, said first RF signal provided to a plasma processing chamber to energize plasma therein, said first RF signal representing a pulsing RF signal; and

a second RF generator for providing a second RF signal to said plasma processing chamber, said second RF generator having a sensor subsystem for detecting at an output of the second RF generator values of at least one parameter associated with said plasma processing chamber indicating a change in pulsing of said first RF signal from a first state to a second state, said second RF generator having a pulse controlling subsystem for pulsing said second RF signal provided by the second RF generator in response to detecting that the values of said at least one parameter at the output of the second RF generator indicate a change in pulsing of said first RF signal from the first state to the second state,

wherein the first RF signal in the first state has a different forward power level from a forward power level of the first RF signal in the second state,

wherein the first RF generator and the sensor subsystem of the second RF generator are coupled to an impedance matching network.

2. The synchronized pulsing arrangement of claim 1, wherein said sensor subsystem of the second RF generator is configured to detect the at least one parameter that represents at least one of forward RF power and reflected RF power.

3. The synchronized pulsing arrangement of claim 1, wherein said sensor subsystem of the second RF generator is configured to detect the at least one parameter that represents gamma that further represents a numerical index indicating a degree of mismatch between reflected power and forward power of said second RF generator.

4. The synchronized pulsing arrangement of claim 1, further comprising a tool host computer, said tool host computer providing at least a trigger threshold value to enable circuitry in said sensor subsystem of said second RF generator to ascertain whether said first RF signal is pulsed from the first state to the second state.

5. The synchronized pulsing arrangement of claim 4, wherein said pulse controlling subsystem is configured to generate at least a high level and a low level for said second RF signal, said high level and said low level governed by at least one value provided said tool host computer.

6. The synchronized pulsing arrangement of claim 1, wherein said second RF generator is configured to generate the second RF signal that has at least a high pulse value and a non-zero low pulse value.

7. The synchronized pulsing arrangement of claim 1, wherein said sensor subsystem of the second RF generator is configured to detect the at least one parameter that represents the values obtained from a VI probe.

8. The synchronized pulsing arrangement of claim 1, wherein said sensor subsystem of the second RF generator is configured to detect the at least one parameter that represents an output impedance of said second RF generator.

9. The synchronized pulsing arrangement of claim 1, wherein the impedance matching network is coupled to outputs of said first RF generator and said second RF generator, wherein said sensor subsystem of the second RF generator is configured to detect the at least one parameter that represents an impedance of an input of said impedance matching network.

10. The synchronized pulsing arrangement of claim 1, wherein said second RF generator is configured to generate the second RF signal that includes at least a predefined high pulse value and a predefined low pulse value.

11. The synchronized pulsing arrangement of claim 10, further comprising control circuitry for generating a pulse control signal to control pulsing by said first RF generator and wherein said second RF generator does not pulse responsive to a signal from said control circuitry, said second RF generator pulses at least one of high-to-low and low-to-high responsive to said detecting said values of said at least one parameter associated with said plasma processing chamber that reflects whether said first RF signal is pulsed high or pulsed low.

12. The synchronized pulsing arrangement of claim 1, wherein said second RF generator is configured to generate the second RF signal that has at least a predefined high pulse value and a predefined low pulse value and wherein second RF generator is configured to generate the second RF signal that transitions, after a predefined duration expires after being pulsed from said predefined low pulse value to said predefined high pulse value, to said predefined pulse low value.

13. The synchronized pulsing arrangement of claim 1, wherein said second RF generator is configured to generate the second RF signal that includes at least a predefined high pulse value and a predefined low pulse value and wherein said second RF generator is configured to generate the second RF signal that transitions, after a predefined duration expires after being pulsed from said predefined high pulse value to said predefined low pulse value, to said predefined high pulse value.

27. The system of claim 4, wherein the second RF generator is configured to scale the second RF signal from a low level to a high level upon determining that the first RF generator pulsed from the first state to the second state, wherein the second RF generator is configured to scale the second RF signal from the high level to the low level upon determining that the first RF generator pulsed from the second state to the first state.

14. A synchronized pulsing arrangement comprising:

a first RF generator for providing a first RF signal, said first RF signal provided to a plasma processing chamber to energize plasma therein, said first RF signal representing a pulsing RF signal;

control circuitry for generating a pulse control signal to control pulsing by said first RF generator;

a second RF generator for providing a second RF signal to said plasma processing chamber, said second RF generator having a sensor subsystem for detecting at an output of the second RF generator values of at least one parameter associated with said plasma processing chamber indicating a change in pulsing of said first RF signal from a first state to a second state, said second RF generator having a pulse controlling subsystem for pulsing said second RF signal provided by the second RF generator in response to detecting that the values of said at least one parameter at the output of the second RF generator indicate a change in pulsing of said first RF signal from the first state to the second state, wherein the first RF signal in the first state has a different forward power range level from a forward power level of the first RF signal in the second state,

wherein the first RF generator and the sensor subsystem of the second RF generator are coupled to an impedance matching network; and

a third RF generator for providing a third RF signal to said plasma processing chamber, said third RF generator having a sensor subsystem for detecting values at an output of the third RF generator of said at least one parameter associated with said plasma processing chamber indicating a change in pulsing of said first RF signal from the first state to the second state, said third RF generator having a pulse controlling subsystem for pulsing said third RF signal provided by the third RF generator in response to detecting that the values of said at least one parameter at the output of the third RF generator indicate a change in pulsing of said first RF signal from the first state to the second state,

wherein said second RF generator does not pulse responsive to a signal from said control circuitry, said second RF generator pulses said second RF signal at least one of high-to-low and low-to-high responsive to said detecting said values of said at least one parameter associated with said plasma processing chamber, and

wherein said third RF generator does not pulse responsive to the signal from said control circuitry, said third RF generator pulses said third RF signal at least one of high-to-low and low-to-high responsive to said detecting said values of said at least one parameter associated with said plasma processing chamber.

15. The synchronized pulsing arrangement of claim 14, wherein said sensor subsystem of the second RF generator is configured to detect the at least one parameter that represents at least one of forward RF power and reflected RF power.

16. The synchronized pulsing arrangement of claim 14, wherein said sensor subsystem of the second RF generator is configured to detect the at least one parameter that represents gamma that further represents a numerical index indicating a degree of mismatch between reflected power and forward power of said second RF generator.

17. The synchronized pulsing arrangement of claim 14, wherein said sensor subsystem of the second RF generator compares said values of said at least said one parameter associated with said plasma processing chamber with a threshold value to ascertain when to pulse said second RF signal.

18. The synchronized pulsing arrangement of claim 14, wherein said second RF generator is configured to generate the second RF signal that has at least a high pulse value and a non-zero low pulse value.

19. The synchronized pulsing arrangement of claim 14, wherein said second RF generator is configured to generate the second RF signal that has at least a predefined high pulse value and a predefined low pulse value.

20. The synchronized pulsing arrangement of claim 14, wherein said sensor subsystem of the second RF generator is configured to detect the at least one parameter that represents the values obtained from a VI probe.

21. The synchronized pulsing arrangement of claim 14, wherein said sensor subsystem of the second RF generator is configured to detect the at least one parameter that represents an output impedance of said second RF generator.

22. The synchronized pulsing arrangement of claim 14, wherein the impedance matching network is coupled to outputs of said first RF generator and said second RF generator, wherein said at least one parameter represents an impedance of an input of said impedance matching network.

23. The synchronized pulsing arrangement of claim 14, wherein said second RF generator is configured to generate the second RF signal that has at least a predefined high pulse value and a predefined low pulse value and wherein said second RF signal generator is configured to generate the second RF signal that transitions, after a predefined duration expires after being pulsed from said predefined low pulse value to said predefined high pulse value, to said predefined low pulse value.

24. A system comprising:

a first RF generator for generating a first RF signal;

a second RF generator for generating a second RF signal at an output;

a third RF generator for generating a third RF signal at an output;

an impedance matching network connected to the first RF generator for receiving the first RF signal, the impedance matching network connected to the second RF generator for receiving the second RF signal;

a plasma processing chamber coupled to the impedance matching network;

control circuitry coupled to the first RF generator for generating a pulse control signal to control pulsing by the first RF generator;

the second RF generator having a sensor subsystem for detecting at the output of the second RF generator values of a parameter associated with the plasma processing chamber indicating a change in pulsing of the first RF signal from a first state to a second state, the first RF signal in the first state having a different forward power level from a forward power level of the first RF signal in the second state,

the second RF generator having an RF generator pulse controlling subsystem for pulsing the second RF signal generated by the second RF generator in response to detecting that the values of the parameter at the output of the second RF generator indicate a change in pulsing of the first RF signal from the first state to the second state,

the third RF generator having a sensor subsystem for detecting values at the output of the third RF generator of the parameter associated with the plasma processing chamber indicating a change in pulsing of the first RF signal from the first state to the second state,

the third RF generator having an RF generator pulse controlling subsystem for pulsing the third RF signal generated by the third RF generator in response to detecting that the values of the parameter at the output of the third RF generator indicate a change in pulsing of the first RF signal from the first state to the second state.

25. The system of claim 24, wherein the second RF generator is configured to compare the value of the parameter to a pre-determined trigger threshold value to determine that the first RF generator pulsed from the first state to the second state.

26. The system of claim 24, wherein the first RF generator is configured not to pulse the first RF signal based on the pulsing of the second RF generator and the pulsing of the third RF generator.