Semiconductor material doping
First Claim
1. A method of fabricating a structure, the method comprising:
 selecting a target valence band discontinuity between a quantum well and an immediately adjacent barrier in the structure using a dopant energy level of a barrier dopant in the barrier, wherein the dopant energy level is substantially aligned with a ground state energy for free carriers in a valence energy band for the quantum well;
selecting a target thickness of each of the quantum well and the barrier using an estimated characteristic size of a wave function for the corresponding dopant in the barrier such that the target thickness is less than the characteristic size;
selecting a target quantum well doping level for a quantum well dopant in the quantum well and a target barrier doping level for the barrier dopant in the adjacent barrier to facilitate a real space transfer of holes across the barrier; and
forming the quantum well and the adjacent barrier in the structure having an actual valence band discontinuity corresponding to the target valence band discontinuity, an actual thickness corresponding to the target thickness, an actual quantum well doping level corresponding to the target quantum well doping level, and an actual barrier doping level corresponding to the target barrier doping level.
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Accused Products
Abstract
A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).
23 Citations
21 Claims

1. A method of fabricating a structure, the method comprising:

selecting a target valence band discontinuity between a quantum well and an immediately adjacent barrier in the structure using a dopant energy level of a barrier dopant in the barrier, wherein the dopant energy level is substantially aligned with a ground state energy for free carriers in a valence energy band for the quantum well; selecting a target thickness of each of the quantum well and the barrier using an estimated characteristic size of a wave function for the corresponding dopant in the barrier such that the target thickness is less than the characteristic size; selecting a target quantum well doping level for a quantum well dopant in the quantum well and a target barrier doping level for the barrier dopant in the adjacent barrier to facilitate a real space transfer of holes across the barrier; and forming the quantum well and the adjacent barrier in the structure having an actual valence band discontinuity corresponding to the target valence band discontinuity, an actual thickness corresponding to the target thickness, an actual quantum well doping level corresponding to the target quantum well doping level, and an actual barrier doping level corresponding to the target barrier doping level.  View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)


11. A device comprising:

a radiation generating structure; and a superlattice layer at least partially transparent to radiation generated by the radiation generating structure, wherein the superlattice layer comprises; a quantum well having a quantum well doping level for a quantum well dopant and a thickness less than a characteristic size of a wave function for the quantum well dopant; and an adjacent barrier having a barrier doping level for a barrier dopant and a thickness corresponding to a characteristic size of a wave function for the quantum well dopant, wherein a valence band discontinuity between the quantum well and the adjacent barrier in the structure, the thicknesses of the quantum well and the barrier, the quantum well doping level, and the target barrier doping level facilitate a real space transfer of holes across the barrier, and wherein a dopant energy level of the barrier dopant is substantially aligned with a ground state energy for free carriers in a valence energy band for the quantum well.  View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)


21. A method of fabricating a deep ultraviolet light emitting device, the method comprising:

forming a deep ultraviolet light generating structure; and forming a superlattice layer at least partially transparent to the deep ultraviolet radiation generated by the deep ultraviolet light generating structure, wherein the forming the superlattice layer comprises; selecting a target valence band discontinuity between a quantum well and an immediately adjacent barrier in the superlattice layer using a dopant energy level of a barrier dopant in the immediately adjacent barrier, wherein the dopant energy level coincides with a ground state energy for free carriers in a valence energy band for the quantum well; selecting a target thickness of each of the quantum well and the barrier using an estimated characteristic size of a wave function for the corresponding dopant in the barrier such that the target thickness is less than the characteristic size; selecting a target quantum well doping level for a quantum well dopant in the quantum well and a target barrier doping level for the barrier dopant in the barrier to facilitate a real space transfer of holes across the barrier; and forming the quantum well and the barrier in the superlattice layer having an actual valence band discontinuity corresponding to the target valence band discontinuity, an actual thickness corresponding to the target thickness, an actual quantum well doping level corresponding to the target quantum well doping level, and an actual barrier doping level corresponding to the target barrier doping level.

1 Specification