Semiconductor material doping

  • US 9,368,580 B2
  • Filed: 06/17/2011
  • Issued: 06/14/2016
  • Est. Priority Date: 12/04/2009
  • Status: Active Grant
First Claim
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1. A method of fabricating a structure, the method comprising:

  • selecting a target valence band discontinuity between a quantum well and an immediately adjacent barrier in the structure using a dopant energy level of a barrier dopant in the barrier, wherein the dopant energy level is substantially aligned with a ground state energy for free carriers in a valence energy band for the quantum well;

    selecting a target thickness of each of the quantum well and the barrier using an estimated characteristic size of a wave function for the corresponding dopant in the barrier such that the target thickness is less than the characteristic size;

    selecting a target quantum well doping level for a quantum well dopant in the quantum well and a target barrier doping level for the barrier dopant in the adjacent barrier to facilitate a real space transfer of holes across the barrier; and

    forming the quantum well and the adjacent barrier in the structure having an actual valence band discontinuity corresponding to the target valence band discontinuity, an actual thickness corresponding to the target thickness, an actual quantum well doping level corresponding to the target quantum well doping level, and an actual barrier doping level corresponding to the target barrier doping level.

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