Smart meter voltage sensing using optically coupled isolators

• US 9,377,490 B2
• Filed: 01/22/2015
• Issued: 06/28/2016
• Est. Priority Date: 07/14/2014
• Status: Expired due to Fees

• Current Assignee: International Technological University
• Original Assignee: International Technological University
• Inventors: Wang, Karl L.
• Primary Examiner(s): NGUYEN, VINH P
• Application Number:
  US14/603,221
• Publication Number:
  US 20160011236A1
• Time in Patent Office: 523 Days
• US Class Current: 1/1
• CPC Class Codes: G01R 15/14 Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
• CPC Class Codes: G01R 15/22 using light-emitting devices, e.g. LED, optocouplers G01R31/31901 takes precedence
• CPC Class Codes: G01R 19/0084 measuring voltage only all subgroups of G01R19/00 take precedence

Abstract

A transformer-less method and system for voltage and current sensing using voltage drops across resistors is disclosed. Using optically coupled isolators, the sensed voltages in the high voltage power lines are optically coupled and electrically isolated to the low voltage circuits. The circuit designs for voltage and current sensing'"'"'s and electrical isolation are disclosed.

Claims

1. A method of sensing voltage within a smart meter comprising:

coupling a voltage divider to a high voltage portion of the smart meter; and

optically coupling the high voltage portion to a low voltage portion;

wherein the optical coupling is provided by an infrared (IR) emitting diode on the high voltage portion and an optical transistor on the low voltage portion;

wherein the IR emitting diode and the optical transistor comprises a optically coupled isolator;

wherein a third resistor (R_D) coupled to the IR emitting diode provides a bias condition to the IR emitting diode;

wherein the third resistor (R_D) is determined by the equation

2. The method of claim 1, wherein the IR emitting diode is biased in a forward conduction region to maximize a change in current with respect to a change of the applied forward voltage.

3. The method of claim 1, wherein the IR emitting diode operates at a forward conduction region of a current-voltage characteristic of the IR emitting diode with large gain to maximize sensitivity of the optically coupled isolator while minimizing current consumption.

4. The method of claim 1, wherein the optical transistor is in an emitter follower configuration.

5. The method of claim 4, wherein a load resistor is coupled to an emitter of the optical transistor to develop a voltage that is proportional and in phase to a sensed voltage.

6. The method of claim 1, whereas the optical transistor is in an open collector configuration.

7. The method of claim 6, wherein a load resistor is coupled to a collector of the optical transistor to develop a voltage that is proportional and in 180 degrees out of phase to a sensed voltage.

8. A system of sensing voltage within a smart meter;

wherein the smart meter comprises a high voltage portion and a low voltage portion;

the system comprising;

a voltage divider coupled to a high voltage portion of the smart meter; and

an optically coupled isolator coupled between the high voltage portion and the low voltage portion;

wherein the optically coupled isolator comprises an infrared (IR) emitting diode within the high voltage portion and an optical transistor within low voltage portion;

wherein a third resistor (R_D) coupled to the IR emitting diode provides a bias condition to the IR emitting diode;

wherein the third resistor (R_D) is determined by the equation

9. The system of claim 8, wherein the IR emitting diode is biased in a forward conduction region to maximize a change in current with respect to a change of the applied forward voltage.

10. The system of claim 8, wherein the IR emitting diode operates at a forward conduction region of a current-voltage characteristic of the IR emitting diode with large gain to maximize sensitivity of the optically coupled isolator while minimizing current consumption.

11. The system of claim 10, wherein the optical transistor is in an emitter follower configuration.

12. The system of claim 11, wherein a load resistor is coupled to an emitter of the optical transistor to develop a voltage that is proportional and in phase to a sensed voltage.

13. The system of claim 8, whereas the optical transistor is in an open collector configuration.

14. The system of claim 13, wherein a load resistor is coupled to a collector of the optical transistor to develop a voltage that is proportional and in 180 degrees out of phase to a sensed voltage.