Power amplifier module

• US 9,397,710 B2
• Filed: 02/12/2015
• Issued: 07/19/2016
• Est. Priority Date: 02/28/2014
• Status: Active Grant

• Current Assignee: Murata Manufacturing Co Limited
• Original Assignee: Murata Manufacturing Co Limited
• Inventors: Tsutsui, Takayuki
• Primary Examiner(s): Talukder, Md
• Application Number:
  US14/620,968
• Publication Number:
  US 20150249433A1
• Time in Patent Office: 523 Days
• Field of Search: 455/73, 455/127.3, 455/194.2, 455/144, 455/253.2, 455/311, 455/341, 330/51
• US Class Current: 1/1
• CPC Class Codes: H03F 1/0277 Selecting one or more amplifiers from a plurality of amplifiers
• CPC Class Codes: H03F 1/56 Modifications of input or output impedances, not otherwise provided for
• CPC Class Codes: H03F 2200/111 the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
• CPC Class Codes: H03F 2200/222 A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
• CPC Class Codes: H03F 2200/27 A biasing circuit node being switched in an amplifier circuit
• CPC Class Codes: H03F 2200/318 A matching circuit being used as coupling element between two amplifying stages
• CPC Class Codes: H03F 2200/387 A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
• CPC Class Codes: H03F 2200/429 Two or more amplifiers or one amplifier with filters for different frequency bands are coupled in parallel at the input or output
• CPC Class Codes: H03F 2200/451 the amplifier being a radio frequency amplifier
• CPC Class Codes: H03F 2203/21142 Output signals of a plurality of power amplifiers are parallel combined to a common output
• CPC Class Codes: H03F 2203/7206 the gated amplifier being switched on or off by a switch in the bias circuit of the amplifier controlling a bias voltage in the amplifier
• CPC Class Codes: H03F 2203/7209 the gated amplifier being switched from a first band to a second band
• CPC Class Codes: H03F 2203/7236 the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es)
• CPC Class Codes: H03F 3/191 Tuned amplifiers H03F3/193, H03F3/195 take precedence
• CPC Class Codes: H03F 3/195 in integrated circuits
• CPC Class Codes: H03F 3/211 using a combination of several amplifiers H03F3/60 takes precedence
• CPC Class Codes: H03F 3/24 of transmitter output stages
• CPC Class Codes: H03F 3/245 with semiconductor devices only
• CPC Class Codes: H03F 3/68 Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics power amplifiers using a combination of several semiconductor amplifiers H03F3/211; combinations of amplifiers using coupling networks with distributed constants H03F3/602
• CPC Class Codes: H03F 3/72 Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
• CPC Class Codes: H04B 1/0053 : with common antenna for more than one band
• CPC Class Codes: H04B 1/04 : Circuits
• CPC Class Codes: H04B 1/0458 : Arrangements for matching and coupling between power amplifier and antenna or between amplifying stages matching circuits in general H03H
• CPC Class Codes: H04B 2001/0408 : with power amplifiers

Abstract

A power amplifier module includes a first signal input terminal to which a first radio frequency signal of a first frequency band is input; a second signal input terminal to which a second radio frequency signal of a second frequency band is input; first, second, and third power amplifiers; and a bias control circuit. The first signal input terminal and an input terminal of the first power amplifier are electrically connected to each other, the second signal input terminal and an input terminal of the second power amplifier are electrically connected to each other, output terminals of the first and second power amplifiers and an input terminal of the third power amplifier are electrically connected to each other, and the bias control circuit controls supplying a bias current to one of the first and second power amplifiers depending on a selected frequency band.

Claims

1. A power amplifier module comprising:

a first signal input terminal to which a first radio frequency signal of a first frequency band is input;

a second signal input terminal to which a second radio frequency signal of a second frequency band is input;

first, second, and third power amplifiers;

a bias control circuit;

a shunt connection terminal that is electrically connected between an output terminal of the first power amplifier, an output terminal of the second power amplifier, and an input terminal of the third power amplifier; and

a third inductor of which a first end is electrically connected to the shunt connection terminal and a second end is grounded,

wherein the first signal input terminal and an input terminal of the first power amplifier are electrically connected to each other,

wherein the second signal input terminal and an input terminal of the second power amplifier are electrically connected to each other,

wherein the output terminal of the first power amplifier is electrically connected to the output terminal of the second power amplifier and the input terminal of the third power amplifier at a connecting point,

wherein the bias control circuit performs a control process of supplying a bias current to one of the first and second power amplifiers depending on a frequency band selected from the first and second frequency bands,

wherein the first and second signal input terminals are formed on a first side of a semiconductor integrated circuit,

wherein the shunt connection terminal is formed on a second side of the semiconductor integrated circuit, the second side of the semiconductor integrated circuit being adjacent to the first side of the semiconductor integrated circuit, and

wherein a direction of wires connected to the first and second signal input terminals and a direction of a wire connected to the shunt connection terminal are perpendicular to each other.

2. The power amplifier module according to claim 1, further comprising:

a first inductor that is disposed between the connecting point and the output terminal of the first power amplifier; and

a second inductor that is disposed between the connecting point and the output terminal of the second power amplifier.

3. The power amplifier module according to claim 2, wherein the first frequency band is a frequency band higher than the second frequency band, and

wherein the inductance of the second inductor is greater than the inductance of the first inductor.

4. The power amplifier module according to claim 2, further comprising:

a shunt connection terminal that is electrically connected between the output terminal of the first power amplifier, the output terminal of the second power amplifier, and the input terminal of the third power amplifier; and

a third inductor of which a first end is electrically connected to the shunt connection terminal and a second end is grounded,

wherein the first and second signal input terminals are formed on a first side of a semiconductor integrated circuit,

wherein the shunt connection terminal is formed on a second side of the semiconductor integrated circuit, the second side of the semiconductor integrated circuit being adjacent to the first side of the semiconductor integrated circuit, and

wherein a direction of a wire connected to the first signal input terminal and a direction of a wire connected to the second signal input terminal are perpendicular to each other.

5. The power amplifier module according to claim 3, further comprising:

a shunt connection terminal that is electrically connected between the output terminal of the first power amplifier, the output terminal of the second power amplifier, and the input terminal of the third power amplifier; and

a third inductor of which a first end is electrically connected to the shunt connection terminal and a second end is grounded,

wherein the first and second signal input terminals are formed on a first side of a semiconductor integrated circuit,

wherein the shunt connection terminal is formed on a second side of the semiconductor integrated circuit, the second side of the semiconductor integrated circuit being adjacent to the first side of the semiconductor integrated circuit, and

wherein a direction of a wire connected to the first signal input terminal and a direction of a wire connected to the second signal input terminal are perpendicular to each other.

6. The power amplifier module according to claim 1, further comprising:

a third signal input terminal to which a third radio frequency signal of a third frequency band is input;

a fourth signal input terminal to which a fourth radio frequency signal of a fourth frequency band is input; and

fourth, fifth, and sixth power amplifiers,

wherein the third signal input terminal and an input terminal of the fourth power amplifier are electrically connected to each other,

wherein the fourth signal input terminal and an input terminal of the fifth power amplifier are electrically connected to each other,

wherein output terminals of the fourth and fifth power amplifiers and an input terminal of the sixth power amplifier are electrically connected to each other,

wherein the bias control circuit performs a control process of supplying a bias current to one of the first, second, third, and fourth power amplifiers depending on the frequency band selected from the first, second, third, and fourth frequency bands, and

wherein the first, second, and third power amplifiers and the fourth, fifth, and sixth power amplifiers are arranged on a semiconductor integrated circuit so as to be substantially axisymmetric.

7. The power amplifier module according to claim 2, further comprising:

a third signal input terminal to which a third radio frequency signal of a third frequency band is input;

a fourth signal input terminal to which a fourth radio frequency signal of a fourth frequency band is input; and

fourth, fifth, and sixth power amplifiers,

wherein the third signal input terminal and an input terminal of the fourth power amplifier are electrically connected to each other,

wherein the fourth signal input terminal and an input terminal of the fifth power amplifier are electrically connected to each other,

wherein output terminals of the fourth and fifth power amplifiers and an input terminal of the sixth power amplifier are electrically connected to each other,

wherein the bias control circuit performs a control process of supplying a bias current to one of the first, second, third, and fourth power amplifiers depending on the frequency band selected from the first, second, third, and fourth frequency bands, and

wherein the first, second, and third power amplifiers and the fourth, fifth, and sixth power amplifiers are arranged on a semiconductor integrated circuit so as to be substantially axisymmetric.

8. The power amplifier module according to claim 3, further comprising:

a third signal input terminal to which a third radio frequency signal of a third frequency band is input;

a fourth signal input terminal to which a fourth radio frequency signal of a fourth frequency band is input; and

fourth, fifth, and sixth power amplifiers,

wherein the third signal input terminal and an input terminal of the fourth power amplifier are electrically connected to each other,

wherein the fourth signal input terminal and an input terminal of the fifth power amplifier are electrically connected to each other,

wherein output terminals of the fourth and fifth power amplifiers and an input terminal of the sixth power amplifier are electrically connected to each other,

wherein the bias control circuit performs a control process of supplying a bias current to one of the first, second, third, and fourth power amplifiers depending on the frequency band selected from the first, second, third, and fourth frequency bands, and

wherein the first, second, and third power amplifiers and the fourth, fifth, and sixth power amplifiers are arranged on a semiconductor integrated circuit so as to be substantially axisymmetric.

9. The power amplifier module according to claim 1, further comprising:

a third signal input terminal to which a third radio frequency signal of a third frequency band is input;

a fourth signal input terminal to which a fourth radio frequency signal of a fourth frequency band is input; and

fourth, fifth, and sixth power amplifiers,

wherein the third signal input terminal and an input terminal of the fourth power amplifier are electrically connected to each other,

wherein the fourth signal input terminal and an input terminal of the fifth power amplifier are electrically connected to each other,

wherein output terminals of the fourth and fifth power amplifiers and an input terminal of the sixth power amplifier are electrically connected to each other,

wherein the bias control circuit performs a control process of supplying a bias current to one of the first, second, third, and fourth power amplifiers depending on the frequency band selected from the first, second, third, and fourth frequency bands, and

wherein the first, second, and third power amplifiers and the fourth, fifth, and sixth power amplifiers are arranged on the semiconductor integrated circuit so as to be substantially axisymmetric.

10. An integrated transceiver module comprising:

a transmitter module that includes the power amplifier module that transmits a radio frequency signal via an antenna, the power amplifier module comprising;

a first signal input terminal to which a first radio frequency signal of a first frequency band is input;

a second signal input terminal to which a second radio frequency signal of a second frequency band is input;

first, second, and third power amplifiers;

a bias control circuit;

a shunt connection terminal that is electrically connected between an output terminal of the first power amplifier, an output terminal of the second power amplifier, and an input terminal of the third power amplifier; and

a third inductor of which a first end is electrically connected to the shunt connection terminal and a second end is grounded,

wherein the first signal input terminal and an input terminal of the first power amplifier are electrically connected to each other,

wherein the second signal input terminal and an input terminal of the second power amplifier are electrically connected to each other,

wherein the output terminal of the first power amplifier is electrically connected to the output terminal of the second power amplifier and the input terminal of the third power amplifier at a connecting point,

wherein the bias control circuit performs a control process of supplying a bias current to one of the first and second power amplifiers depending on a frequency band selected from the first and second frequency bands,

wherein the first and second signal input terminals are formed on a first side of a semiconductor integrated circuit,

wherein the shunt connection terminal is formed on a second side of the semiconductor integrated circuit, the second side of the semiconductor integrated circuit being adjacent to the first side of the semiconductor integrated circuit, and

wherein a direction of wires connected to the first and second signal input terminals and a direction of a wire connected to the shunt connection terminal are perpendicular to each other; and

a receiver module that receives a radio frequency signal via the antenna.

11. An integrated transceiver module according to claim 10, the power amplifier module further comprising:

a first inductor that is disposed between the connecting point and the output terminal of the first power amplifier; and

a second inductor that is disposed between the connecting point and the output terminal of the second power amplifier.

12. An integrated transceiver module according to claim 10,

wherein the first frequency band is a frequency band higher than the second frequency band, and

wherein the inductance of the second inductor is greater than the inductance of the first inductor.

13. An integrated transceiver module according to claim 10, the power amplifier module further comprising:

a shunt connection terminal that is electrically connected between the output terminal of the first power amplifier, the output terminal of the second power amplifier, and the input terminal of the third power amplifier; and

a third inductor of which a first end is electrically connected to the shunt connection terminal and a second end is grounded,

wherein the first and second signal input terminals are formed on a first side of a semiconductor integrated circuit,

wherein the shunt connection terminal is formed on a second side of the semiconductor integrated circuit, the second side of the semiconductor integrated circuit being adjacent to the first side of the semiconductor integrated circuit, and

wherein a direction of a wire connected to the first signal input terminal and a direction of a wire connected to the second signal input terminal are perpendicular to each other.

14. An integrated transceiver module according to claim 10, the power amplifier module further comprising:

a third signal input terminal to which a third radio frequency signal of a third frequency band is input;

a fourth signal input terminal to which a fourth radio frequency signal of a fourth frequency band is input; and

fourth, fifth, and sixth power amplifiers,

wherein the third signal input terminal and an input terminal of the fourth power amplifier are electrically connected to each other,

wherein the fourth signal input terminal and an input terminal of the fifth power amplifier are electrically connected to each other,

wherein output terminals of the fourth and fifth power amplifiers and an input terminal of the sixth power amplifier are electrically connected to each other,

wherein the bias control circuit performs a control process of supplying a bias current to one of the first, second, third, and fourth power amplifiers depending on the frequency band selected from the first, second, third, and fourth frequency bands, and

wherein the first, second, and third power amplifiers and the fourth, fifth, and sixth power amplifiers are arranged on a semiconductor integrated circuit so as to be substantially axisymmetric.