Display device and manufacturing method thereof

• US 9,406,698 B2
• Filed: 08/23/2013
• Issued: 08/02/2016
• Est. Priority Date: 08/28/2012
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Hirakata, Yoshiharu, Nishi, Takeshi
• Primary Examiner(s): Santiago, Mariceli
• Application Number:
  US13/974,220
• Publication Number:
  US 20140065430A1
• Time in Patent Office: 1,075 Days
• US Class Current: 1/1
• CPC Class Codes: G02F 1/133308 Support structures for LCD panels, e.g. frames or bezels
• CPC Class Codes: G02F 1/1339 Gaskets; Spacers; Sealing of cells
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 2102/311 Flexible OLED
• CPC Class Codes: H10K 50/841 Self-supporting sealing arrangements
• CPC Class Codes: H10K 50/8426 Peripheral sealing arrangements, e.g. adhesives, sealants
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 77/111 Flexible substrates
• CPC Class Codes: Y02E 10/549 Organic PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A display device in which reliability of a display element is improved is provided. Alternatively, a display device in which reliability of a transistor is improved is provided. Alternatively, a display device in which an increase in an area of a periphery region is suppressed is provided. A display device includes a display region including a display element between a first flexible substrate and a second flexible substrate in which the display region is surrounded by a first continuous sealant, the first sealant is surrounded by a second continuous sealant, and the second sealant is provided between the first substrate and the second substrate and on at least one of a side surface of the first substrate and a side surface of the second substrate.

Claims

1. A display device comprising:

a first flexible substrate and a second flexible substrate;

an insulating film over the first flexible substrate;

a first continuous sealant between the insulating film and the second flexible substrate; and

a second sealant between the insulating film and the second flexible substrate, the second sealant surrounding the first sealant,

wherein the first continuous sealant comprises glass,

wherein the second sealant comprises a first member and a second member,

wherein the first member is in contact with a side surface of the first flexible substrate and a side surface of the second flexible substrate,

wherein a side surface of the second member is in contact with the first member, and

wherein a bottom surface of the second member is in contact with a top surface of the insulating film.

2. The display device according to claim 1, wherein the first member comprises a resin material or glass.

3. The display device according to claim 1, wherein the first member comprises a resin material.

4. The display device according to claim 1, wherein the second member comprises a metal material.

5. An electronic appliance comprising the display device according to claim 1.

6. The display device according to claim 1, the display device further comprises a transistor comprising an oxide semiconductor layer over the first flexible substrate,

wherein the oxide semiconductor layer comprises at least one of indium, gallium, and zinc.

7. The display device according to claim 1, the display device further comprises a transistor comprising an oxide semiconductor layer over the first flexible substrate,

wherein the transistor comprising an AlOx layer over the oxide semiconductor layer.

8. A display device comprising:

a first flexible substrate and a second flexible substrate;

an insulating film over and in contact with the first flexible substrate;

a first continuous sealant between the first flexible substrate and the second flexible substrate; and

a second sealant between the first flexible substrate and the second flexible substrate, the second sealant surrounding the first continuous sealant,

wherein the first continuous sealant and the second sealant are in contact with the insulating film,

wherein the first continuous sealant comprises glass,

wherein the second sealant comprises a first member and a second member,

wherein the first member is in contact with a side surface of the first flexible substrate and a side surface of the second flexible substrate,

wherein a side surface of the second member is in contact with the first member, and

wherein a bottom surface of the second member is in contact with a top surface of the insulating film.

9. The display device according to claim 8, wherein the first member comprises a resin material or glass.

10. The display device according to claim 8, wherein the first member comprises a resin material.

11. The display device according to claim 8, wherein the second member comprises a metal material.

12. An electronic appliance comprising the display device according to claim 8.

13. The display device according to claim 8, the display device further comprises a transistor comprising an oxide semiconductor layer over the first flexible substrate,

wherein the oxide semiconductor layer comprises at least one of indium, gallium, and zinc.

14. The display device according to claim 8, the display device further comprises a transistor comprising an oxide semiconductor layer over the first flexible substrate,

wherein the transistor comprising an AlOx layer over the oxide semiconductor layer.