Semiconductor device and method for manufacturing the same

• US 9,412,060 B2
• Filed: 09/29/2014
• Issued: 08/09/2016
• Est. Priority Date: 07/27/2007
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Koyama, Jun, Kato, Kiyoshi, Koen, Takaaki, Yakubo, Yuto, Yanagisawa, Makoto, Ohtani, Hisashi, Sugiyama, Eiji, Horikoshi, Nozomi
• Primary Examiner(s): HOANG, QUOC DINH
• Application Number:
  US14/500,343
• Publication Number:
  US 20150014419A1
• Time in Patent Office: 680 Days
• Field of Search: 257/660, 257/662, 257/663, 257/679, 257/684, 257/710
• US Class Current: 1/1
• CPC Class Codes: G06K 19/07722 the record carrier being multilayered, e.g. laminated sheets flat articles in general, see B32B37/00
• CPC Class Codes: G06K 19/07735 the record carrier comprising means for protecting against electrostatic discharge
• CPC Class Codes: G06K 19/07794 the record carrier comprising a booster or auxiliary antenna in addition to the antenna connected directly to the integrated circuit
• CPC Class Codes: H01L 23/295 containing a filler H01L23/296 takes precedence
• CPC Class Codes: H01L 23/3157 Partial encapsulation or coating mask layer used as insulation layer H01L21/31
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: H01L 2924/19041 being a capacitor
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding

Abstract

A semiconductor device capable of wireless communication, which has high reliability in terms of resistance to external force, in particular, pressing force and can prevent electrostatic discharge in an integrated circuit without preventing reception of an electric wave. The semiconductor device includes an on-chip antenna connected to the integrated circuit and a booster antenna which transmits a signal or power included in a received electric wave to the on-chip antenna without contact. In the semiconductor device, the integrated circuit and the on-chip antenna are interposed between a pair of structure bodies formed by impregnating a fiber body with a resin. One of the structure bodies is provided between the on-chip antenna and the booster antenna. A conductive film having a surface resistance value of approximately 10⁶ to 10¹⁴ Ω/cm² is formed on at least one surface of each structure body.

Claims

1. A semiconductor device comprising:

a first conductive layer;

a second conductive layer wirelessly connected to the first conductive layer;

a first circuit for rectifying an alternating-current voltage electrically connected to the second conductive layer;

a regulator circuit electrically connected to the first circuit for rectifying the alternating-current voltage; and

a second circuit electrically connected to the regulator circuit,

wherein the first conductive layer and the second conductive layer are configured to be electromagnetically coupled to each other,

wherein the first circuit for rectifying the alternating-current voltage is configured to rectify an alternating-current voltage generated in the second conductive layer, and generate a rectified voltage,

wherein the regulator circuit is configured to adjust a level of the rectified voltage, and generate an adjusted voltage,

wherein the regulator circuit supplies the adjusted voltage to the second circuit,

wherein the first conductive layer is loop-shaped,

wherein a part of the second conductive layer is loop-shaped,

wherein a width of the second conductive layer is smaller than a width of a part of the first conductive layer, and

wherein an inner edge and an outer edge of the second conductive layer overlap with the first conductive layer.

2. The semiconductor device according to claim 1,

wherein the second circuit is one selected from the group consisting of a demodulation circuit, a modulation circuit, a control circuit and a memory.

3. The semiconductor device according to claim 1,

wherein the second circuit comprises a transistor.

4. A semiconductor device comprising:

a first conductive layer;

a second conductive layer wirelessly connected to the first conductive layer;

a first circuit for rectifying an alternating-current voltage electrically connected to the second conductive layer;

a regulator circuit electrically connected to the first circuit for rectifying the alternating-current voltage;

a second circuit electrically connected to the regulator circuit; and

a pair of structure bodies,

wherein the second conductive layer, the first circuit for rectifying the alternating-current voltage, the regulator circuit and the second circuit are interposed between the pair of structure bodies,

wherein the first conductive layer and the second conductive layer are configured to be electromagnetically coupled to each other,

wherein the first circuit for rectifying the alternating-current voltage is configured to rectify an alternating-current voltage generated in the second conductive layer, and generate a rectified voltage,

wherein the regulator circuit is configured to adjust a level of the rectified voltage, and generate an adjusted voltage, and

wherein the regulator circuit supplies the adjusted voltage to the second circuit.

5. The semiconductor device according to claim 4,

wherein the second circuit is one selected from the group consisting of a demodulation circuit, a modulation circuit, a control circuit and a memory.

6. The semiconductor device according to claim 4,

wherein the first conductive layer is loop-shaped,

wherein a part of the second conductive layer is loop-shaped,

wherein a width of the second conductive layer is smaller than a width of a part of the first conductive layer, and

wherein an inner edge and an outer edge of the second conductive layer overlap with the first conductive layer.

7. The semiconductor device according to claim 4,

wherein the second circuit comprises a transistor.

8. The semiconductor device according to claim 4,

wherein each of the pair of structure bodies is formed by impregnating a fiber body with a resin.

9. The semiconductor device according to claim 4,

wherein the pair of structure bodies has an insulating property.

10. The semiconductor device according to claim 4, further comprising:

a first antistatic film on at least one surface of one of the pair of structure bodies; and

a second antistatic film on at least one surface of the other of the pair of structure bodies.

11. A semiconductor device comprising:

a first conductive layer;

a second conductive layer wirelessly connected to the first conductive layer;

a first circuit for rectifying an alternating-current voltage electrically connected to the second conductive layer;

a regulator circuit electrically connected to the first circuit for rectifying the alternating-current voltage; and

a second circuit electrically connected to the regulator circuit,

wherein the first conductive layer and the second conductive layer are configured to be electromagnetically coupled to each other,

wherein the first circuit for rectifying the alternating-current voltage is configured to rectify an alternating-current voltage generated in the second conductive layer, and generate a rectified voltage,

wherein the regulator circuit is configured to adjust a level of the rectified voltage, and generate an adjusted voltage,

wherein the regulator circuit supplies the adjusted voltage to the second circuit,

wherein when alternating current flows through the first conductive layer, induced electromotive force is generated by electromagnetic induction in the second conductive layer,

wherein the first conductive layer is loop-shaped,

wherein a part of the second conductive layer is loop-shaped,

wherein a width of the second conductive layer is smaller than a width of a part of the first conductive layer, and

wherein an inner edge and an outer edge of the second conductive layer overlap with the first conductive layer.

12. The semiconductor device according to claim 11,

wherein the second circuit is one selected from the group consisting of a demodulation circuit, a modulation circuit, a control circuit and a memory.

13. The semiconductor device according to claim 11,

wherein the second circuit comprises a transistor.