Method for cutting substrate of irregular pattern and display device

• US 9,416,041 B2
• Filed: 10/15/2013
• Issued: 08/16/2016
• Est. Priority Date: 06/26/2013
• Status: Active Grant

• Current Assignee: Beijing BOE Display Technology Co Ltd (BOE Technology Group Co., Ltd.), BOE Technology Group Co., Ltd.
• Original Assignee: Beijing BOE Display Technology Co Ltd (BOE Technology Group Co., Ltd.), BOE Technology Group Co., Ltd.
• Inventors: Jiang, Liyuan, Zheng, Yaokun, Qu, Lianjie, Wang, Yajie, Jiang, Yanqi
• Primary Examiner(s): OLSEN, ALLAN W
• Application Number:
  US14/347,138
• Publication Number:
  US 20150218033A1
• Time in Patent Office: 1,036 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: B23K 2101/18 Sheet panels
• CPC Class Codes: B23K 2103/50 Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
• CPC Class Codes: B23K 2103/54 Glass
• CPC Class Codes: B23K 26/359 by providing a line or line pattern, e.g. a dotted break initiation line
• CPC Class Codes: B23K 26/364 for making a groove or trench, e.g. for scribing a break initiation groove
• CPC Class Codes: B23K 26/40 taking account of the properties of the material involved
• CPC Class Codes: B23K 28/02 Combined welding or cutting procedures or apparatus
• CPC Class Codes: B26F 3/002 Precutting and tensioning or breaking
• CPC Class Codes: C03B 33/0222 Scoring using a focussed radiation beam, e.g. laser
• CPC Class Codes: C03B 33/04 Cutting or splitting in curves, especially for making spectacle lenses
• CPC Class Codes: C03B 33/074 Glass products comprising an outer layer or surface coating of non-glass material
• CPC Class Codes: C03C 15/00 Surface treatment of glass, not in the form of fibres or filaments, by etching etching or surface-brightening compositions, in general C09K13/00
• CPC Class Codes: Y10T 225/12 With preliminary weakening
• CPC Class Codes: Y10T 29/49996 Successive distinct removal operations

Abstract

A method for cutting a substrate of irregular pattern includes: forming a cutting line on the substrate, wherein the closed region enclosed by the cutting line is the irregular pattern that is required; forming a trough line at the cutting line; and applying an external force to the substrate so as to divide the substrate at the trough line. The method can remarkably improve accuracy and efficiency of cutting a substrate of irregular pattern.

Claims

1. A method for cutting a substrate of irregular pattern, comprising:

forming a cutting line on the substrate, wherein a closed region enclosed by the cutting line is the irregular pattern that is required;

forming a trough line at the cutting line through an etching process; and

applying an external force onto the substrate so as to divide the substrate at the trough line, wherein the external force is applied on the substrate through ultrasonic wave to cut the substrate at the trough line formed by the etching process.

2. The method for cutting a substrate of irregular pattern according to claim 1, wherein forming of the cutting line on the substrate comprises:

coating the substrate with photoresist to cover the entire substrate;

performing exposure by means of a mask plate and development, such that the photoresist generates an entirely-retained region and a completely-removed region, wherein a boundary line of the photoresist entirely-retained region coincides with the cutting line.

3. The method for cutting a substrate of irregular pattern according to claim 2, wherein forming a trough line at the cutting line comprises:

performing etching along the cutting line on the substrate by using a dry-etching or wet-etching process so as to form the trough line at the cutting line.

4. The method for cutting a substrate of irregular pattern according to claim 3, wherein performing etching along the cutting line on the substrate by using a dry-etching process comprises:

performing etching along the cutting line on the substrate by using sulfur hexafluoride gas, helium gas or argon gas.

5. The method for cutting a substrate of irregular pattern according to claim 3, wherein performing etching along the cutting line on the substrate by using a wet-etching process comprises:

performing etching along the cutting line on the substrate by using hydrofluoric acid.

6. The method for cutting a substrate of irregular pattern according to claim 1, wherein forming a trough line at the cutting line through an etching process comprises:

performing etching along the cutting line on the substrate by using a dry-etching or wet-etching process so as to form the trough line at the cutting line.

7. The method for cutting a substrate of irregular pattern according to claim 6, wherein performing etching along the cutting line on the substrate by using a dry-etching process comprises:

performing etching along the cutting line on the substrate by using sulfur hexafluoride gas, helium gas or argon gas.

8. The method for cutting a substrate of irregular pattern according to claim 6, wherein performing etching along the cutting line on the substrate by using a wet-etching process comprises:

performing etching along the cutting line on the substrate by using hydrofluoric acid.

9. The method for cutting a substrate of irregular pattern according to claim 1, wherein a frequency range for the ultrasonic wave is between 20 KHz to 500 MHz.

10. The method for cutting a substrate of irregular pattern according to claim 1, after applying an external force on the substrate so as to divide the substrate at the trough line, further comprising:

performing corner-trimming and/or edge-grinding process on the edge of the substrate comprising the desired irregular pattern.