Semiconductor device and method of manufacturing the same
First Claim
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1. A semiconductor device, comprising:
- gate electrodes perpendicularly stacked on a substrate;
channel holes extending perpendicularly to the substrate, the channel holes penetrating through the gate electrodes, the channel holes having a channel region;
gate pads extended from the gate electrodes by different lengths; and
contact plugs connected to the gate pads,at least a portion of the gate pads having a region having a thickness less than a thickness of the gate electrode connected to the at least a portion of the gate pads.
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Abstract
A semiconductor device, including gate electrodes perpendicularly stacked on a substrate; channel holes extending perpendicularly to the substrate, the channel holes penetrating through the gate electrodes, the channel holes having a channel region; gate pads extended from the gate electrodes by different lengths; and contact plugs connected to the gate pads, at least a portion of the gate pads having a region having a thickness less than a thickness of the gate electrode connected to the at least a portion of the gate pads.
64 Citations
15 Claims
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1. A semiconductor device, comprising:
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gate electrodes perpendicularly stacked on a substrate; channel holes extending perpendicularly to the substrate, the channel holes penetrating through the gate electrodes, the channel holes having a channel region; gate pads extended from the gate electrodes by different lengths; and contact plugs connected to the gate pads, at least a portion of the gate pads having a region having a thickness less than a thickness of the gate electrode connected to the at least a portion of the gate pads. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device, comprising:
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gate electrodes stacked perpendicularly on a substrate; gate pads having contact regions, the gate pads extending from the gate electrodes by different lengths; and contact plugs connected to the gate pads in the contact regions, at least a portion of the gate pads having a reduced thickness in the contact regions. - View Dependent Claims (12, 13, 14, 15)
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Specification