Semiconductor light emitting device

• US 9,419,175 B2
• Filed: 02/28/2013
• Issued: 08/16/2016
• Est. Priority Date: 11/22/2012
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Sugiyama, Naoharu, Yamada, Shinji, Nunoue, Shinya
• Primary Examiner(s): Wilczewski, Mary
• Assistant Examiner(s): CHIU, TSZ K
• Application Number:
  US13/779,978
• Publication Number:
  US 20140138614A1
• Time in Patent Office: 1,265 Days
• Field of Search: 257/11, 257/77, 257/79, 257/E21.127, 257/94, 257/13, 257/615, 438/47
• US Class Current: 1/1
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01S 2301/173 The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
• CPC Class Codes: H01S 5/021 Silicon based substrates
• CPC Class Codes: H01S 5/02315 Support members, e.g. bases or carriers
• CPC Class Codes: H01S 5/0233 Mounting configuration of laser chips
• CPC Class Codes: H01S 5/0235 Method for mounting laser chips
• CPC Class Codes: H01S 5/3201 incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

According to one embodiment, a semiconductor light emitting device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; a light emitting layer; a conductive metal layer; and a first stress application layer. The first semiconductor layer contains a nitride semiconductor crystal and receives tensile stress in a (0001) plane. The second semiconductor layer contains a nitride semiconductor crystal. The light emitting layer has an average lattice constant larger than a lattice constant of the first semiconductor layer. The conductive metal layer has a thermal expansion coefficient larger than a thermal expansion coefficient of a nitride semiconductor crystal. The first stress application layer is provided between the second semiconductor layer and the light emitting layer. The first stress application layer relaxes tensile stress applied from the metal layer to the second semiconductor layer.

Claims

1. A semiconductor light emitting device comprising:

a metal layer being conductive;

a first semiconductor layer of a first conductivity type containing a GaN crystal and receiving tensile stress in a (0001) plane;

a second semiconductor layer of a second conductivity type, the second semiconductor layer being provided between the metal layer and the first semiconductor layer and containing a GaN crystal;

a reflecting metal provided between the metal layer and the second semiconductor layer, the reflecting metal having direct connection with the second semiconductor layer;

a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the light emitting layer containing a nitride semiconductor crystal; and

a third semiconductor layer provided between the second semiconductor layer and the light emitting layer and relaxing tensile stress applied from the metal layer to the second semiconductor layer, the third semiconductor layer containing AlGaN crystal,

the metal layer having a thermal expansion coefficient larger than a thermal expansion coefficient of the nitride semiconductor crystal,

the first semiconductor layer having a first face and a second face, the first face facing the light emitting layer, the second face being opposite to the first face, and

a light emitted from the light emitting layer being extracted through the second face.

2. The device according to claim 1, wherein an average lattice constant of the light emitting layer becomes larger from the first semiconductor layer toward the second semiconductor layer.

3. The device according to claim 1, wherein the light emitting layer includes:

a plurality of barrier layers; and

a plurality of well layers each provided between adjacent ones of the plurality of barrier layers and

thicknesses of the plurality of well layers become larger from the first semiconductor layer toward the second semiconductor layer.

4. The device according to claim 1, wherein

the third semiconductor layer includes a plurality of layers with different lattice constants, and

the lattice constants of the plurality of layers become larger from the second semiconductor layer toward the light emitting layer.

5. The device according to claim 1, further comprising a fourth semiconductor layer,

the first semiconductor layer being provided between the light emitting layer and the fourth semiconductor layer,

the fourth semiconductor layer applying compressive stress to the first semiconductor layer.

6. The device according to claim 5, wherein a lattice constant of the fourth semiconductor layer is smaller than a lattice constant of the third semiconductor layer.

7. The device according to claim 1, wherein the light emitting layer contains InGaN.

8. The device according to claim 1, wherein the metal layer contains a metal selected from the group consisting of gold (Au), silver (Ag), copper (Cu), and aluminum (Al) or an alloy containing two or more selected from the group.

9. The device according to claim 5, wherein the fourth semiconductor layer contains AlN.

10. The device according to claim 9, wherein the fourth semiconductor layer contains AlGaN.

11. The device according to claim 1, wherein the light emitting layer has an average lattice constant larger than a lattice constant of the first semiconductor layer.

12. The device according to claim 1, wherein a thickness of the conductive metal layer is not less than 100 μ

m.

13. The device according to claim 1, wherein the second face includes roughened surface.

14. A semiconductor light emitting device comprising:

a metal layer being conductive;

a first semiconductor layer of a first conductivity type containing a GaN crystal and having tensile strain in a (0001) plane;

a second semiconductor layer of a second conductivity type, the second semiconductor layer being provided between the metal layer and the first semiconductor layer and containing a GaN crystal;

a reflecting metal provided between the metal layer and the second semiconductor layer, the reflecting metal having direct connection with the second semiconductor layer;

a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the light emitting layer containing a nitride semiconductor crystal; and

a third semiconductor layer provided between the second semiconductor layer and the light emitting layer, containing a AlGaN crystal, and having a lattice constant smaller than a lattice constant of the first semiconductor layer,

the conductive metal layer having a thermal expansion coefficient larger than a thermal expansion coefficient of the nitride semiconductor crystal,

the first semiconductor layer having a first face and a second face, the first face facing the light emitting layer, the second face being opposite to the first face, and

a light emitted from the light emitting layer being extracted through the second face.

15. The device according to claim 14, wherein an average lattice constant of the light emitting layer becomes larger from the first semiconductor layer toward the second semiconductor layer.

16. The device according to claim 14, wherein the light emitting layer includes:

a plurality of barrier layers; and

a plurality of well layers each provided between adjacent ones of the plurality of barrier layers and

thicknesses of the plurality of well layers become larger from the first semiconductor layer toward the second semiconductor layer.

17. The device according to claim 14, wherein

the third semiconductor layer includes a plurality of layers with different lattice constants and

lattice constants of the plurality of layers become larger from the second semiconductor layer toward the light emitting layer.

18. The device according to claim 14, further comprising a fourth semiconductor layer,

the first semiconductor layer being provided between the light emitting layer and the fourth semiconductor layer,

the fourth semiconductor layer applying compressive stress to the first semiconductor layer.

19. The device according to claim 18, wherein a lattice constant of the fourth semiconductor layer is smaller than a lattice constant of the third semiconductor layer.

20. The device according to claim 14, wherein the light emitting layer contains InGaN.

21. The device according to claim 14, wherein the metal layer contains a metal selected from the group consisting of gold (Au), silver (Ag), copper (Cu), and aluminum (Al) or an alloy containing two or more selected from the group.

22. The device according to claim 18, wherein the fourth semiconductor layer contains AlN.

23. The device according to claim 22, wherein the fourth semiconductor layer contains AlGaN.

24. The device according to claim 14, wherein the light emitting layer has an average lattice constant larger than a lattice constant of the first semiconductor layer.

25. The device according to claim 14, wherein a thickness of the conductive metal layer is not less than 100 μ

m.

26. The device according to claim 14, wherein the second face includes roughened surface.