Semiconductor package structure and semiconductor manufacturing process
First Claim
1. A semiconductor package structure, comprising:
- a first dielectric layer having a first surface and a second surface opposite to the first surface;
a die pad within the first dielectric layer;
an active component within the first dielectric layer and disposed on the die pad;
a plurality of first metal bars disposed on the first surface of the first dielectric layer, the plurality of first metal bars being substantially parallel to each other, and at least one of the plurality of first metal bars being electrically connected to the active component;
a plurality of second metal bars disposed on the second surface of the first dielectric layer, the plurality of second metal bars being substantially parallel to each other; and
a plurality of through vias penetrating the first dielectric layer and connecting each of the plurality of first metal bars to a corresponding second metal bar.
1 Assignment
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Accused Products
Abstract
The present disclosure relates to a semiconductor package structure and a manufacturing method thereof. The semiconductor package structure comprises a first dielectric layer, a die pad, an active component, at least one first metal bar, at least one second metal bar and a through via. The first dielectric layer has a first surface and a second surface opposite to the first surface. The die pad is located within the first dielectric layer. The active component is located within the first dielectric layer and disposed on the die pad. The first metal bar is disposed on the first surface of the first dielectric layer, and electrically connected to the active component. The second metal bar is disposed on the second surface of the first dielectric layer. The through via penetrates the first dielectric layer and connects the at least one first metal bar to the at least one second metal bar.
18 Citations
16 Claims
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1. A semiconductor package structure, comprising:
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a first dielectric layer having a first surface and a second surface opposite to the first surface; a die pad within the first dielectric layer; an active component within the first dielectric layer and disposed on the die pad; a plurality of first metal bars disposed on the first surface of the first dielectric layer, the plurality of first metal bars being substantially parallel to each other, and at least one of the plurality of first metal bars being electrically connected to the active component; a plurality of second metal bars disposed on the second surface of the first dielectric layer, the plurality of second metal bars being substantially parallel to each other; and a plurality of through vias penetrating the first dielectric layer and connecting each of the plurality of first metal bars to a corresponding second metal bar. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor package structure, comprising:
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a first dielectric layer having a top surface; a die within the first dielectric layer; and a first spiral inductor within the first dielectric layer, at least one terminal of the first spiral inductor being electrically connected to the die, wherein a central axis of the first spiral inductor is substantially parallel to the top surface of the first dielectric layer. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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Specification