Nitride semiconductor device

  • US 9,444,011 B2
  • Filed: 08/25/2015
  • Issued: 09/13/2016
  • Est. Priority Date: 07/07/2000
  • Status: Expired due to Term
First Claim
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1. A nitride semiconductor device having a structure wherein an active layer of a quantum well structure, which has a well layer made of a nitride semiconductor that includes In and a barrier layer made of a nitride semiconductor, is sandwiched between a p-type nitride semiconductor layer and an n-type nitride semiconductor layer,wherein said active layer has L (L≧

  • 2) barrier layers so that the barrier layer arranged in a position nearest to said n-type nitride semiconductor layer is denoted as barrier layer B1 and the i-th barrier layer (i=1, 2, 3, . . . L) counted from the barrier layer B1 toward said p-type nitride semiconductor layer is denoted as barrier layer Bi;

    wherein a barrier layer BL (i=L)is formed between the well layer and a first p-type nitride semiconductor layer formed in said p-type nitride semiconductor layer, said first p-type nitride semiconductor layer being made of a nitride semiconductor including Al and having a larger band gap energy than said active layer,wherein the barrier layer BL is thicker than the barrier layer Bi (i≠

    L), andwherein a plurality of the barrier layers including the barrier layer B1 and located on the n-type nitride semiconductor layer side are doped with an n-type impurity, and a plurality of the barrier layers including the barrier layer BL and located on the p-type nitride semiconductor layer side are undoped with an n-type impurity.

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