Optoelectronic semiconductor chip, optoelectronic semiconductor component, and a method for producing an optoelectronic semiconductor component

• US 9,444,022 B2
• Filed: 05/18/2012
• Issued: 09/13/2016
• Est. Priority Date: 05/18/2011
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Eisert, Dominik, Baade, Torsten, Zitzlsperger, Michael
• Primary Examiner(s): Tran, Tran
• Application Number:
  US14/118,475
• Publication Number:
  US 20140117396A1
• Time in Patent Office: 1,579 Days
• Field of Search: 257/98
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/4554 Coating
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48471 the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
• CPC Class Codes: H01L 2224/48479 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 2933/0058 relating to optical field-shaping elements
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/28 containing only elements of Group II and Group VI of the Periodic Table
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/52 : Encapsulations
• CPC Class Codes: H01L 33/56 : Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/60 : Reflective elements
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An optoelectronic semiconductor chip includes a semiconductor body that emits primary light, and a luminescence conversion element that emits secondary light by wavelength conversion of at least part of the primary light, wherein the luminescence conversion element has a first lamina fixed to a first partial region of an outer surface of the semiconductor body, the outer surface emitting primary light, and leaves free a second partial region of the outer surface, the luminescence conversion element has a second lamina fixed to a surface of the first lamina facing away from the semiconductor body and spaced apart from the semiconductor body, the first lamina is at least partly transmissive to the primary radiation, a section of the second lamina covers at least the second partial region, and at least the section of the second lamina is designed to be absorbent and/or reflective and/or scattering for the primary radiation.

Claims

1. An optoelectronic component comprising a reflector cavity, a light-emitting semiconductor body that emits primary light in the reflector cavity and a luminescence conversion element that emits secondary light by wavelength conversion of at least part of the primary light, wherein

the reflector cavity has an opening,

a first partial region of the opening is covered with a reflector layer,

a second partial region of the opening is not covered with the reflector layer, and

the luminescence conversion element in a plan view of the opening completely overlaps the second partial region, wherein, in a plan view of the opening, the second partial region laterally with respect to the semiconductor body is arranged in an edge region of the opening and wherein the luminescence conversion element is an encapsulation compound with which the reflector cavity is filled.

2. The optoelectronic component according to claim 1, wherein, in a plan view of the opening, the second partial region completely overlaps the semiconductor body.

3. The optoelectronic component according to claim 1, wherein the luminescence conversion element encapsulates the semiconductor body.

4. The optoelectronic component according to claim 1, wherein the reflector cavity is completely filled with the luminescence conversion element.

5. An optoelectronic component comprising:

a reflector cavity,

a light-emitting semiconductor body that emits primary light in the reflector cavity,

a transparent or translucent carrier, and

a luminescence conversion element that emits secondary light by wavelength conversion of at least part of the primary light,

wherein

the reflector cavity has an opening,

a first partial region of the opening is covered with a reflector layer, said reflector layer being applied to the transparent or translucent carrier,

a second partial region of the opening is not covered with the reflector layer,

the luminescence conversion element in a plan view of the opening completely overlaps the second partial region,

in a plan view of the opening, the second partial region laterally with respect to the semiconductor body is arranged in an edge region of the opening,

the luminescence conversion element is an encapsulation compound with which the reflector cavity is filled, and

the opening of the reflector cavity is completely covered by the transparent or translucent carrier.

6. The optoelectronic component according to claim 5, wherein the transparent or translucent carrier is a glass carrier or a plastic carrier.

7. The optoelectronic component according to claim 5, wherein the reflector layer contains gold so that the reflector layer is configured to absorb blue primary light and reflect yellow secondary light.