Light emitting device having wavelength converting layer

• US 9,450,155 B2
• Filed: 07/31/2015
• Issued: 09/20/2016
• Est. Priority Date: 02/09/2011
• Status: Active Grant

• Current Assignee: Seoul Semiconductor Co., Ltd.
• Original Assignee: Seoul Semiconductor Co., Ltd.
• Inventors: Jung, Jung Hwa, Kim, Jung Doo, Jung, Seoung Ho, Kim, Min Hye, Kim, Yoo Jin
• Primary Examiner(s): GREEN, TELLY D
• Application Number:
  US14/815,404
• Publication Number:
  US 20150340347A1
• Time in Patent Office: 417 Days
• Field of Search: 257/98
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/508 having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

Disclosed is a light emitting device having a wavelength converting layer. The light emitting device comprises a plurality of semiconductor stacked structures; connectors for electrically connecting the plurality of semiconductor stacked structures to one another; a single wavelength converting layer for covering the plurality of semiconductor stacked structures; an electrode electrically connected to at least one of the semiconductor stacked structures; and at least one additional electrode positioned on the electrode, passing through the wavelength converting layer to be exposed to the outside, and forming a current input terminal to the light emitting device or a current output terminal from the light emitting device. Since the single wavelength converting layer covers the plurality of semiconductor stacked structures, the plurality of semiconductor stacked structures can be integrally mounted on a chip mounting member such as a package or a module.

Claims

1. A light emitting device, comprising:

semiconductor stacked structures electrically connected to one another by connectors, wherein the semiconductor stacked structures comprise a first semiconductor stacked structure and a second semiconductor stacked structure;

a wavelength converting layer covering upper surfaces of the semiconductor stacked structures;

first electrodes disposed on the semiconductor stacked structures, respectively;

second electrodes disposed on the semiconductor stacked structures, respectively;

a first additional electrode disposed only on the first electrode on the first semiconductor stacked structure;

a second additional electrode disposed only on the second electrode on the second semiconductor stacked structure; and

a mount comprising a first lead terminal and a second lead terminal, electrically connected to the first additional electrode and the second additional electrode, respectively,

wherein each of the connectors electrically connects two of the semiconductor stacked structures by connecting the first electrode of one semiconductor stacked structure to the second electrode of another semiconductor stacked structure, and

wherein the connectors are disposed under an upper surface of the wavelength converting layer.

2. The light emitting device of claim 1, wherein the wavelength converting layer has an upper surface area greater than an upper surface area of the semiconductor stacked structures.

3. The light emitting device of claim 1, wherein parts of the wavelength converting layer are disposed between the semiconductor stacked structures.

4. The light emitting device of claim 3, wherein the semiconductor stacked structures are spaced apart from each other by the wavelength converting layer.

5. The light emitting device of claim 1, further comprising a substrate disposed between the semiconductor stacked structures and the mount.

6. The light emitting device of claim 5, wherein the substrate comprises an insulation material.

7. The light emitting device of claim 5, wherein the wavelength converting layer covers a side of the substrate in a conformal thickness.

8. The light emitting device of claim 1, wherein the wavelength converting layer covers sides of the semiconductor stacked structures with a substantially uniform thickness.

9. The light emitting device of claim 8, wherein the semiconductor stacked structures are fully buried in the wavelength converting layer.

10. The light emitting device of claim 1, wherein the semiconductor stacked structures are flip chips.

11. The light emitting device of claim 1, wherein the semiconductor stacked structures are electrically connected to the first lead terminal and the second lead terminal by flip-bonding.

12. The light emitting device of claim 1, further comprising a spacer layer contacting the side surfaces of the semiconductor stacked structures.

13. The light emitting device of claim 12, wherein the spacer layer comprises an insulating layer or a distributed Bragg reflector (DBR).