Broadband connection structure and method

• US 9,450,650 B2
• Filed: 05/30/2014
• Issued: 09/20/2016
• Est. Priority Date: 11/07/2013
• Status: Active Grant

• Current Assignee: National Chiao Tung University (Government of The Republic of China)
• Original Assignee: National Chiao Tung University (Government of The Republic of China)
• Inventors: Li, Chun-Hsing, Kuo, Chien-Nan
• Primary Examiner(s): Takaoka, Dean
• Application Number:
  US14/292,388
• Publication Number:
  US 20150123749A1
• Time in Patent Office: 844 Days
• Field of Search: 333/24.R, 333/175, 340/12.51, 307/104
• US Class Current: 1/1
• CPC Class Codes: H01L 24/00 Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
• CPC Class Codes: H04B 5/24 Inductive coupling
• CPC Class Codes: H04B 5/72 for local intradevice communication

Abstract

A broadband connection structure is disclosed. The broadband connection structure includes a carrier and a chip. The carrier includes a first resonator. The chip includes a second resonator and configured on the carrier using a flip-chip method. The first resonator is connected to the second resonator via a magnetic field and an electric field existing therebetween to transmit a broadband signal between the carrier and the chip. A broadband connection method is also disclosed.

Claims

1. A broadband connection structure, comprising:

a carrier including a first resonator; and

a chip including a second resonator and configured on the carrier in a flip-chip method, wherein the first resonator is connected to the second resonator via a magnetic field and an electric field existing therebetween to transmit a broadband signal between the carrier and the chip, the first resonator includes a first equivalent inductor, the carrier includes a first split-rectangular conducting wire constituting the first equivalent inductor, the first split-rectangular conducting wire has a length and a width, the broadband connection structure has an operable bandwidth, and one of the length and the width is less than one-fifth of a wavelength to which a lowest frequency in the operable bandwidth corresponds.

2. A broadband connection structure as claimed in claim 1, wherein:

the second resonator includes a second equivalent inductor, and the chip further includes a second split-rectangular conducting wire constituting the second equivalent inductor;

the first split-rectangular conducting wire has two first terminals, and the second split-rectangular conducting wire has two second terminals; and

the broadband signal is a differential signal.

3. A broadband connection structure as claimed in claim 2, wherein the first equivalent inductor and the second equivalent inductor couple the broadband signal via the magnetic field therebetween.

4. A broadband connection structure as claimed in claim 2, wherein the differential signal is input to the first terminals, coupled to the second split-rectangular conducting wire via the magnetic field and the electric field and output from the second terminals.

5. A broadband connection structure as claimed in claim 2, wherein the differential signal is input to the second terminals, coupled to the first split-rectangular conducting wire via the magnetic field and the electric field and output from the first terminals.

6. A broadband connection structure as claimed in claim 2, further comprising:

a virtual ground plane set between the first terminals and between the second terminals, and each of the first and second split-rectangular conducting wires is symmetric with respect to the virtual ground plane so that the carrier and the chip have an identical ground potential.

7. A broadband connection structure as claimed in claim 2, wherein:

the carrier further includes;

a first substrate; and

a first insulating layer between the first substrate and the first split-rectangular conducting wire;

the chip further includes;

a second substrate; and

a second insulating layer between the second substrate and the second split-rectangular conducting wire; and

the first substrate and the second substrate are formed from one of an identical material and different materials.

8. A broadband connection structure as claimed in claim 7, wherein:

the first resonator further includes a first equivalent capacitor formed from the first split-rectangular conducting wire, the first insulating layer and the first substrate; and

the second resonator further includes a second equivalent capacitor formed from the second split-rectangular conducting wire, the second insulating layer and the second substrate constitute.

9. A broadband connection structure as claimed in claim 2, wherein:

the first split-rectangular conducting wire has a first parasitic capacitance;

the second split-rectangular conducting wire has a second parasitic capacitance;

the first resonator further includes a first equivalent capacitor formed from the first parasitic capacitance; and

the second resonator further includes a second equivalent capacitor formed from the second parasitic capacitance.

10. A broadband connection structure as claimed in claim 2, further comprising:

a gap between the carrier and the chip; and

an equivalent coupling capacitor formed from the first split-rectangular conducting wire, the second split-rectangular conducting wire and the gap, and coupling the broadband signal via the electric field.

11. A broadband connection structure, comprising:

a first chip including a first resonator; and

a second chip including a second resonator and placed on the first chip by a flip-chip method, wherein the first resonator is coupled to the second resonator by a magnetic field and an electric field existing therebetween to transmit a broadband signal between the first chip and the second chip, wherein the first resonator includes a first equivalent inductor and a first equivalent capacitor, the first chip further includes a first transmission line including a first conducting wire acting as the first equivalent inductor, the first conducting wire has a length and a width, the broadband connection structure has an operable bandwidth, and one of the length and the width is less than one-fifth of a wavelength to which a lowest frequency in the operable bandwidth corresponds.

12. A broadband connection structure as claimed in claim 11, wherein:

the first transmission line further includes;

a first substrate, and

a first dielectric layer; and

the first chip has a first parasitic capacitance formed from the first conducting wire, the first dielectric layer and the first substrate and acting as the first equivalent capacitor.

13. A broadband connection structure as claimed in claim 12, wherein:

the second resonator includes a second equivalent inductor and a second equivalent capacitor;

the second chip further includes a second transmission line, and the second transmission line includes;

a second conducting wire acting as the second equivalent inductor,

a second substrate, and

a second dielectric layer; and

the second chip has a second parasitic capacitance formed from the second conducting wire, the second dielectric layer and the second substrate and acting as the second equivalent capacitor.

14. A broadband connection structure as claimed in claim 13, further comprising:

a gap between the first and the second chips; and

an equivalent coupling capacitor formed from the first conducting wire, the gap and the second conducting wire and coupling the broadband signal via the electric field.

15. A broadband connection structure as claimed in claim 11, wherein:

the first resonator having a first quality factor parameter is coupled to the second resonator having a second quality factor parameter to form a resonant coupling network;

the resonant coupling network has an M-like signal gain band including a bandwidth and a signal gain flatness;

the first resonator and the second resonator have a mutual inductance therebetween and a coupling capacitance; and

the bandwidth is a function of the mutual inductance and the coupling capacitance, the signal gain flatness is a function of one of the first quality factor parameter and the second quality factor parameter.

16. A broadband connection method, comprising steps of:

configuring a first resonator on a carrier and a second resonator on a chip; and

forming a resonant coupling network by a magnetic coupling and an electric coupling between the first resonator and the second resonator to transmit a broadband signal between the carrier and the chip and

providing a first split-rectangular conducting wire on the carrier to act as a first equivalent inductor, wherein the first split-rectangular conducting wire has a length and a width, and one of the length and the width is less than one-fifth of a wavelength to which a lowest frequency in an operable bandwidth corresponds.

17. A method as claimed in claim 16, further comprising steps of:

providing a second split-rectangular conducting wire on the chip to act as a second equivalent inductor;

placing the chip on the carrier by a flip-chip method; and

forming the magnetic coupling by using the first equivalent inductor and the second equivalent inductor.

18. A method as claimed in claim 16, further comprising steps of:

configuring a first conducting layer in the first resonator;

configuring a second conducting layer in the second resonator; and

coupling the first conducting layer and the second conducting layer to form an electric field.

19. A method as claimed in claim 16, wherein the first resonator has a first magnetic field, and the second resonator has a second magnetic field, the method further comprising a step of:

coupling the first magnetic field and the second magnetic field.