Light emitting diode dielectric mirror
First Claim
1. A light emitting diode (LED) chip, comprising:
- an active LED structure comprising an active layer between two oppositely doped layers, and said active layer emitting light in response to an electrical signal applied to said oppositely doped layer;
a first reflective layer adjacent one of said oppositely doped layers, and comprising an index of refraction different than said active LED structure, said first reflective layer reflecting at least some active layer light;
a second reflective layer on said first reflective layer, said second reflective layer reflecting light not reflected by said first reflective layer;
a barrier layer on said second reflective layer; and
a passivation layer on a substantial portion of said barrier layer, wherein said passivation layer is electrically insulating.
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Accused Products
Abstract
A high efficiency LED chip is disclosed that comprises an active LED structure comprising an active layer between two oppositely doped layers. A first reflective layer can be provided adjacent to one of the oppositely doped layers, with the first layer comprising a material with a different index of refraction than the active LED structure. The difference in IR between the active LED structure and the first reflective layer increases TIR of light at the junction. In some embodiments the first reflective layer can comprise an IR lower than the semiconductor material, increasing the amount of light that can experience TIR. Some embodiments of LED chips according to the present invention can also comprise a second reflective layer or metal layer on and used in conjunction with the first reflective layer such that light passing through the first reflective layer can be reflected by the second reflective layer.
167 Citations
40 Claims
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1. A light emitting diode (LED) chip, comprising:
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an active LED structure comprising an active layer between two oppositely doped layers, and said active layer emitting light in response to an electrical signal applied to said oppositely doped layer; a first reflective layer adjacent one of said oppositely doped layers, and comprising an index of refraction different than said active LED structure, said first reflective layer reflecting at least some active layer light; a second reflective layer on said first reflective layer, said second reflective layer reflecting light not reflected by said first reflective layer; a barrier layer on said second reflective layer; and a passivation layer on a substantial portion of said barrier layer, wherein said passivation layer is electrically insulating. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A light emitting diode (LED) chip, comprising:
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an active LED structure comprising an active layer between a p-type layer and an n-type layer, said active layer emitting light in response to an electrical signal applied to said p-type and n-type layers; a current spreading layer on said p-type layer; a dielectric first reflective layer on said current spreading layer, said dielectric first reflective layer reflecting at least some active layer light; a metal layer on said dielectric first reflective layer, said metal layer reflecting light not reflected by said dielectric first reflective layer; a barrier layer on said metal layer; and a passivation layer on a substantial portion of a top or bottom surface of said barrier layer, wherein said passivation layer is electrically insulating. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
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31. A light emitting diode (LED) chip, comprising:
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an active LED structure emitting light in response to an electrical signal; a first reflective layer on said active LED structure; a second reflective layer on said first reflective layer, both positioned to reflect LED structure light so that it contributes to use LED chip emission; a barrier layer on said second reflective layer; a passivation layer on a substantial portion of said barrier layer, wherein said passivation layer is electrically insulating; and vias through said first reflective layer to conduct an electrical signal through said first reflective layer to said active LED structure. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38, 39, 40)
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Specification