Film deposition apparatus and film deposition method

• US 9,466,483 B2
• Filed: 07/17/2013
• Issued: 10/11/2016
• Est. Priority Date: 07/20/2012
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Kato, Hitoshi, Miura, Shigehiro
• Primary Examiner(s): TRINH, MICHAEL MANH
• Application Number:
  US13/943,919
• Publication Number:
  US 20140024200A1
• Time in Patent Office: 1,182 Days
• Field of Search: 438/788
• US Class Current: 1/1
• CPC Class Codes: C23C 16/4554 Plasma being used non-continuously in between ALD reactions C23C16/56 takes precedence
• CPC Class Codes: C23C 16/45551 for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
• CPC Class Codes: C23C 16/46 characterised by the method used for heating the substrate C23C16/48, C23C16/50 take precedence
• CPC Class Codes: H01J 37/32724 Temperature
• CPC Class Codes: H01J 37/32733 Means for moving the material to be treated
• CPC Class Codes: H01J 37/32899 Multiple chambers, e.g. cluster tools
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02617 Deposition types
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H01L 21/68764 characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
• CPC Class Codes: H01L 21/68771 characterised by supporting more than one semiconductor substrate

Abstract

A film deposition apparatus includes a turntable to rotate a substrate thereon, a process gas supply part to supply a process gas to form a thin film on the substrate, a heating part to heat the substrate up to a predetermined film deposition temperature to form a thin film, a plasma treatment part to treat the thin film for modification, a heat lamp provided above the turntable and configured to heat the substrate up to a temperature higher than the predetermined film deposition temperature by irradiating the substrate with light in an adsorption wavelength range of the substrate, and a control part to output a control signal so as to repeat a step of depositing the thin film and a step of modifying the thin film by the plasma, and then to stop supplying the process gas and to heat the substrate by the heat lamp.

Claims

1. A film deposition method to deposit a thin film on a substrate, the film deposition method comprising steps of:

placing a substrate on a substrate receiving area on a turntable provided in a vacuum chamber, the substrate including a concave portion formed in a surface thereof;

rotating the substrate receiving area by rotating the turntable;

heating the substrate on the turntable up to a predetermined film deposition temperature to deposit a thin film;

depositing the thin film on the substrate by repeating a first step of forming at least one of a molecular layer and an atomic layer on the substrate by supplying a process gas from a process gas supply part to the substrate on the turntable, and a second step of modifying the at least one of the molecular layer and the atomic layer by plasma, by supplying a plasma generating gas into the vacuum chamber and by converting the plasma generating gas to plasma in a plasma treatment part; and

modifying the thin film by heating the substrate up to a temperature higher than the predetermined film deposition temperature,

wherein the step of depositing the thin film is performed by supplying a second process gas reactable with the process gas to the substrate from a second process gas supply part provided away from the process gas supply part in a rotational direction of the turntable,

wherein the process gas supply part is provided in a process area, and the second process gas supply part is provided in a second process area,

wherein a separation area is provided between the process area and the second process area, and the step of depositing the thin film includes a step of supplying a separation gas to the separation area to separate the process area and the second process area, and

wherein the step of modifying the thin film is performed by using a plurality of heat lamps provided over the separation area and arranged along the rotational direction of the turntable and by heating the substrate from a plurality of locations along the rotational direction of the turntable.

2. The film deposition method as claimed in claim 1,

wherein the step of modifying the thin film is performed by using the plurality of heat lamps configured to irradiate the substrate with light in a adsorption wavelength range of the substrate from above,

wherein the process gas supply part, the plasma treatment part and the plurality of heat lamps are arranged away from each other when seen from a planar perspective,

wherein the step of depositing the thin film and the step of modifying the thin film is performed by rotating the turntable, and

wherein the step of modifying the thin film is performed while stopping supply of the process gas.

3. The film deposition method as claimed in claim 1, wherein the step of heating the substrate is performed by heating the substrate from the lower side of the turntable through the turntable.

4. The film deposition method as claimed in claim 1, wherein the step of modifying the substrate is performed by heating the substrate up to a predetermined modification temperature higher than a temperature that decomposes the process gas.