Schottky clamped radio frequency switch
First Claim
1. A radio frequency switch with a clamped body comprising:
- a channel that separates a source and a drain;
a clamp region that spans the channel, extends into the source and drain, and has a lower dopant concentration than both the source and drain; and
a pair of matching silicide regions formed on either side of the channel and in contact with the clamp region;
a matching clamp region that spans the channel;
wherein the matching clamp region and the clamp region are spaced apart by less than 20 microns;
wherein the matching clamp region and the clamp region are at least 0.2 microns wide along the overall width of the channel and wherein the clamp region forms a pair of Schottky diode barriers with the pair of matching silicide regions.
3 Assignments
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Accused Products
Abstract
Various methods and devices that involve radio frequency (RF) switches with clamped bodies are provided. An exemplary RF switch with a clamped body comprises a channel that separates a source and a drain. The RF switch also comprises a clamp region that spans the channel, extends into the source and drain, and has a lower dopant concentration than both the source and drain. The RF switch also comprises a pair of matching silicide regions formed on either side of the channel and in contact with the clamp region. The clamp region forms a pair of Schottky diode barriers with the pair of matching silicide regions. The RF switch can operate in a plurality of operating modes. The pair of Schottky diode barriers provide a constant sink for accumulated charge in the clamped body that is independent of the operating mode in which the RF switch is operating.
40 Citations
23 Claims
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1. A radio frequency switch with a clamped body comprising:
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a channel that separates a source and a drain; a clamp region that spans the channel, extends into the source and drain, and has a lower dopant concentration than both the source and drain; and a pair of matching silicide regions formed on either side of the channel and in contact with the clamp region; a matching clamp region that spans the channel; wherein the matching clamp region and the clamp region are spaced apart by less than 20 microns; wherein the matching clamp region and the clamp region are at least 0.2 microns wide along the overall width of the channel and wherein the clamp region forms a pair of Schottky diode barriers with the pair of matching silicide regions. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A radio frequency switch with a clamped body comprising:
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a channel separating a source and a drain of the radio frequency switch; a first clamp region of a semiconductor material that; (i) spans the channel; (ii) comprises a first contact region extending into the source; and (iii) comprises a second contact region extending into the drain; a matching clamp region of the semiconductor material that spans the channel; a first silicide region formed on the first contact region; and a second silicide region formed on the second contact region; wherein the first clamp region of the semiconductor material has a lower dopant concentration than both the source and the drain; wherein the first clamp region of the semiconductor material and the matching clamp region of the semiconductor material are spaced apart by less than 20 microns along a width of the channel; wherein the clamp region and the matching clamp region are at least 0.2 microns wide along the width of the channel; wherein the first contact region forms a first Schottky diode barrier with the first silicide region; and wherein the second contact region forms a second Schottky diode barrier with the second silicide region. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15)
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16. A radio frequency switch comprising:
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a gate that comprises a gate electrode and a gate insulator; a channel that; (i) is located in a body of the radio frequency switch; and (ii) is insulated from the gate electrode by the gate insulator; a first doped region located across the channel from a second doped region; a third region that; (i) spans the channel; (ii) extends into the first and second doped regions; and (iii) has a lower dopant concentration than the first and second doped regions; a fourth region that; (i) spans the channel; (ii) extends into the first and second doped regions; and (iii) has a lower dopant concentration than the first and second doped regions; a first silicide region that forms a first Schottky diode junction with the third region; and a second silicide region that; (i) is located across the channel from the first silicide region; and (ii) forms a second Schottky diode with the third region; wherein the third region and the fourth region are spaced apart by less than 20 microns along a width of the channel; and wherein the third region and the fourth region are each at least 0.2 microns wide along the width of the channel. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23)
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Specification