Ion sensitive detector

• US 9,518,953 B2
• Filed: 09/06/2012
• Issued: 12/13/2016
• Est. Priority Date: 09/07/2011
• Status: Active Grant

• Current Assignee: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION, LTD.
• Original Assignee: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION, LTD.
• Inventors: Nemirovsky, Yael, Gal, Lior, Brouk, Igor
• Primary Examiner(s): Kaur, Gurpreet
• Application Number:
  US13/604,661
• Publication Number:
  US 20130056353A1
• Time in Patent Office: 1,559 Days
• Field of Search: 204/416, 204/400, 204/419, 204/420, 204/418, 204/433, 257/253, 324/438, 324/446, 324/693
• US Class Current: 1/1
• CPC Class Codes: G01N 27/4146 involving nanosized elements, e.g. nanotubes, nanowires

Abstract

An ISFET detector for determining concentration of a target ion in a fluid, the apparatus comprising: a semiconducting substrate comprising a source and a drain having source and drain electrodes respectively and a channel region between them in the substrate; an insulating material overlying the channel region; a gate electrode formed on the insulating material; a reference electrode electrifiable to establish an electric field in the channel region; an accumulator comprising a layer of material of thickness less than or equal to about 2 nm (nanometers) that accumulates a quantity of target ions responsive to concentration of the target ions in the fluid; a layer of a conducting material on which the accumulator is formed that is separate from the gate electrode; and a conducting element that electrically connects the layer of conducting material to the gate electrode.

Claims

1. An ISFET detector for determining concentration of target ions in a fluid, the ISFET detector comprising:

a transistor comprising;

a semiconductor substrate comprising a source and a drain having source and drain electrodes respectively and a channel region between them in the semiconductor substrate;

an insulating material overlying the channel region; and

a gate electrode formed on the insulating material;

a reference electrode electrifiable to establish an electric field in the channel region;

a conducting layer comprising an electrically conducting material;

an accumulator layer formed on the conducting layer, the accumulator layer comprising a layer of material of thickness less than or equal to about 2 nm (nanometers) that accumulates target ions responsive to a concentration of the target ions in the fluid; and

a conducting element comprising a switch selectively operable to electrically connect the conducting layer to, or disconnect the conducting layer from, the gate electrode.

2. An ISFET detector according to claim 1 wherein thickness of the accumulator layer is less than or equal to about 1 nm.

3. An ISFET detector according to claim 1 wherein the layer of material of the accumulator layer comprises a monolayer.

4. An ISFET detector according to claim 1 wherein the layer of material comprised in the accumulator layer has thickness substantially equal to that of a single atomic or molecular monolayer.

5. An ISFET detector according to claim 1 wherein the conducting layer comprises a metal.

6. An ISFET detector according to claim 1 wherein the conducting layer is formed from a polysilicon having a concentration of doping impurities greater than about 10¹⁹ impurities per cm³.

7. An ISFET detector according to claim 1 wherein the layer of material comprised in the accumulator layer comprises a native oxide of the electrically conducting material on which the accumulator layer is formed.

8. An ISFET detector according to claim 1 comprising a controller that controls the switch to disconnect the conducting layer from the gate electrode until a time at which the accumulator layer accumulates target ions to determine concentration of the target ions in the fluid, at which time the controller controls the switch to connect the conducting layer to the gate electrode.

9. An ISFET detector according to claim 1 comprising a power supply electrically connected to the reference electrode and the semiconductor substrate that generates a potential difference between the reference electrode and the semiconductor substrate for a period of time during which the accumulator layer accumulates target ions to determine the concentration of the target ions.

10. Apparatus for determining concentration of target ions in a fluid, the apparatus comprising:

first and second ISFET detectors according to any one of claims 2-7, 8, 9 and 1 having first and second accumulators respectively that accumulate first and second different quantities of target ions responsive to a same concentration of target ions in the fluid;

circuitry that generates first and second signals responsive to the first and second quantities; and

circuitry that generates a difference signal responsive to a difference between the first and second signals.