Predicting pattern critical dimensions in a lithographic exposure process
First Claim
1. A method, comprising exposing patterns on a wafer to radiation and predicting a critical dimension map of the patterns exposed on a wafer by a scanner which generates signals during the exposure of the patterns on the wafer, the critical dimension map being predicted from the signals generated by the scanner during exposure of the patterns on the wafer, wherein the critical dimension map is predicted in situ with respect to the scanner, and further comprising creating a dose map and a defocus map, wherein the critical dimension map is predicted using the dose map and the defocus map.
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Abstract
A method for predicting pattern critical dimensions in a lithographic exposure process includes defining relationships between critical dimension, defocus, and dose. The method also includes performing at least one exposure run in creating a pattern on a wafer. The method also includes creating a dose map. The method also includes creating a defocus map. The method also includes predicting pattern critical dimensions based on the relationships, the dose map, and the defocus map.
24 Citations
18 Claims
- 1. A method, comprising exposing patterns on a wafer to radiation and predicting a critical dimension map of the patterns exposed on a wafer by a scanner which generates signals during the exposure of the patterns on the wafer, the critical dimension map being predicted from the signals generated by the scanner during exposure of the patterns on the wafer, wherein the critical dimension map is predicted in situ with respect to the scanner, and further comprising creating a dose map and a defocus map, wherein the critical dimension map is predicted using the dose map and the defocus map.
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15. A system for predicting pattern critical dimensions in a lithographic exposure process which exposes patterns on a wafer to radiation, comprising:
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a computing device configured to predict a critical dimension map of the patterns exposed on a wafer by a scanner which generates signals during the exposure of the patterns on the wafer, the critical dimension map being predicted from the signals generated by the scanner during the exposure of the patterns on the wafer, wherein the critical dimension map is predicted in situ with respect to the scanner, and wherein the critical dimension map is predicted using a dose map and a defocus map. - View Dependent Claims (16)
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17. A computer program product comprising program code stored in a computer readable medium that, when executed on a computing device, in conjunction with a lithographic exposure process which exposes patterns on a wafer to radiation, causes the computing device to:
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predict a critical dimension map of patterns exposed on a wafer by a scanner which generates signals during the exposure of the patterns on the wafer, the critical dimension map being predicted from signals generated by the scanner during exposure of the patterns on the wafer, wherein the critical dimension map is predicted using a dose map and a defocus map. - View Dependent Claims (18)
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Specification