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Method for fabricating a semiconductor device by bonding a layer to a support with curvature

  • US 9,536,901 B2
  • Filed: 03/09/2016
  • Issued: 01/03/2017
  • Est. Priority Date: 12/28/2001
  • Status: Expired due to Fees
First Claim
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1. A method for fabricating a display device, the method comprising the steps of:

  • forming a first layer containing metal over a first substrate;

    forming a second layer containing metal and oxygen over the first layer containing metal;

    forming a third layer containing a thin film transistor over the second layer containing metal and oxygen;

    forming a fourth layer containing a light emitting element over the third layer containing the thin film transistor;

    bonding a flexible printed circuit to the third layer containing the thin film transistor;

    bonding a second flexible substrate with curvature to the fourth layer containing the light emitting element;

    peeling the third layer containing the thin film transistor and the fourth layer containing the light emitting element bonded to the second flexible substrate from the first substrate; and

    bonding a third substrate to the third layer containing the thin film transistor to sandwich the third layer containing the thin film transistor and the fourth layer containing the light emitting element between the second flexible substrate and the third substrate,wherein the step of bonding the flexible printed circuit is performed before the step of peeling the third layer containing the thin film transistor and the fourth layer containing the light emitting element.

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