Light emitting diode chip having distributed Bragg reflector and method of fabricating the same

  • US 9,577,157 B2
  • Filed: 03/14/2016
  • Issued: 02/21/2017
  • Est. Priority Date: 11/13/2009
  • Status: Active Grant
First Claim
Patent Images

1. A light-emitting diode package, comprising:

  • a body and leads, the body comprising a mounting surface;

    a light-emitting structure disposed on the mounting surface, the light-emitting structure comprising an active layer disposed between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer;

    a phosphor member disposed on the light-emitting structure; and

    a distributed Bragg reflector disposed between the light-emitting structure and the mounting surface,wherein the distributed Bragg reflector comprises a first distributed Bragg reflector and a second distributed Bragg reflector; and

    wherein an optical thickness of material layers within the first distributed Bragg reflector is greater than an optical thickness of material layers within the second distributed Bragg reflector.

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