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Methods for manufacturing and operating a semiconductor device

  • US 9,595,835 B2
  • Filed: 09/30/2013
  • Issued: 03/14/2017
  • Est. Priority Date: 10/22/2003
  • Status: Active Grant
First Claim
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1. A method for driving a capacitor in a semiconductor component, the method comprising:

  • (a) generating a first voltage between a first node and a second node;

    (b) for a first period of time, applying the first voltage to the capacitor by coupling a first capacitor electrode to the first node and coupling a second capacitor electrode to the second node, such that a voltage difference between the first and second capacitor electrodes is the first voltage;

    (c) for a second period of time after the first period of time, applying the first voltage to the capacitor by coupling the first capacitor electrode to the second node and coupling the second capacitor electrode to the first node, such that the voltage difference between the first and second capacitor electrodes is the first voltage, wherein a first switch couples the first node to the first capacitor electrode in a first position and to the second capacitor electrode in a second position; and

    (d) automatically repeating steps (b) and (c).

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