Method for manufacturing semiconductor device

  • US 9,601,603 B2
  • Filed: 03/16/2016
  • Issued: 03/21/2017
  • Est. Priority Date: 10/24/2008
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising:

  • forming a first conductive film that serves as a gate electrode of a transistor;

    forming a first insulating film over the first conductive film;

    forming an oxide semiconductor layer that comprises a channel formation region over the first insulating film;

    forming a second insulating film over the oxide semiconductor layer; and

    forming a transparent film over the second insulating film by a sputtering method,wherein the first conductive film and the transparent film overlap each other with the oxide semiconductor layer therebetween, andwherein the transparent film has a larger width than the oxide semiconductor layer in a channel width direction of the transistor.

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