Array substrate, its manufacturing method and display device
First Claim
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1. A method for manufacturing an array substrate, comprising a step of forming a thin film transistor (TFT);
- wherein the step of forming the TFT comprises;
forming a pattern of an active layer on a substrate;
forming an insulating structure on the pattern of the active layer;
forming a first via-hole penetrating the insulating structure so as to expose the pattern of the active layer at a position corresponding to the first via-hole, the first via-hole extending to an interior of the exposed pattern of the active layer;
subjecting the exposed pattern of the active layer to ion injection through the first via-hole, so as to form an ion injection region located in pattern of the active layer; and
forming a source electrode and a drain electrode on the insulating structure, the source electrode and the drain electrode being in contact with a surface of the ion injection region through the first via-hole so as to be electrically connected to the pattern of the active layer.
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Abstract
The present disclosure provides an array substrate, its manufacturing method and a display device. The array substrate includes a thin film transistor. A source electrode and a drain electrode are located above a pattern of an active layer, and the source electrode and the drain electrode are in electrical contact with the pattern of the active layer through a first via-hole penetrating an insulating structure. Before the formation of the source electrode and the drain electrode, the pattern of the active layer is subjected to ion injection through the first via-hole, so as to form an ion injection region.
13 Citations
20 Claims
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1. A method for manufacturing an array substrate, comprising a step of forming a thin film transistor (TFT);
- wherein the step of forming the TFT comprises;
forming a pattern of an active layer on a substrate; forming an insulating structure on the pattern of the active layer; forming a first via-hole penetrating the insulating structure so as to expose the pattern of the active layer at a position corresponding to the first via-hole, the first via-hole extending to an interior of the exposed pattern of the active layer; subjecting the exposed pattern of the active layer to ion injection through the first via-hole, so as to form an ion injection region located in pattern of the active layer; and forming a source electrode and a drain electrode on the insulating structure, the source electrode and the drain electrode being in contact with a surface of the ion injection region through the first via-hole so as to be electrically connected to the pattern of the active layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
- wherein the step of forming the TFT comprises;
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9. An array substrate comprising a thin film transistor (TFT);
- wherein the TFT comprises;
a pattern of an active layer on a substrate; an insulating structure covering the pattern of the active layer, a first via-hole being formed in the insulating structure and extending to an interior of an exposed pattern of the active layer; an ion injection region located in the pattern of the active layer and at a position corresponding to the first via-hole; and a source electrode and a drain electrode arranged on the insulating structure, the source electrode and the drain electrode being in contact with a surface of the ion injection region through the first via-hole so as to be electrically connected to the pattern of the active layer. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
- wherein the TFT comprises;
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17. A method for manufacturing an array substrate, comprising:
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a step of forming a thin film transistor (TFT), wherein the step of forming the TFT comprises steps of; forming a pattern of an active layer on a substrate; forming an insulating structure on the pattern of the active layer; forming a first via-hole penetrating the insulating structure so as to expose the pattern of the active layer at a position corresponding to the first via-hole, the first via-hole extending to an interior of the exposed pattern of the active layer; repairing a surface of the exposed pattern of the active layer; after the surface of the exposed pattern of the active layer is repaired, forming a source electrode and a drain electrode on the insulating structure, the source electrode and the drain electrode being in contact with the surface of the exposed pattern of the active layer through the first via-hole so as to be electrically connected to the pattern of the active layer. - View Dependent Claims (18, 19, 20)
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Specification