Multi-path devices with mutual inductance compensation networks and methods thereof

• US 9,628,027 B2
• Filed: 03/14/2014
• Issued: 04/18/2017
• Est. Priority Date: 03/14/2014
• Status: Active Grant

• Current Assignee: NXP USA, Inc. (NXP Semiconductors NV)
• Original Assignee: NXP USA, Inc. (NXP Semiconductors NV)
• Inventors: Embar, Ramanujam Srinidhi, Holmes, Damon G., Staudinger, Joseph
• Primary Examiner(s): Pascal, Robert
• Assistant Examiner(s): Glenn, Kimberly
• Application Number:
  US14/211,410
• Publication Number:
  US 20150263681A1
• Time in Patent Office: 1,131 Days
• Field of Search: 333124, 330302
• CPC Class Codes: H01L 2223/6611 Wire connections
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 23/645 Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/19107 off-chip wires
• CPC Class Codes: H03F 1/0288 using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
• CPC Class Codes: H03F 1/0294 using vector summing of two or more constant amplitude phase-modulated signals
• CPC Class Codes: H03F 2200/451 the amplifier being a radio frequency amplifier
• CPC Class Codes: H03F 2200/537 A transformer being used as coupling element between two amplifying stages
• CPC Class Codes: H03F 2200/541 Transformer coupled at the output of an amplifier
• CPC Class Codes: H03F 3/195 in integrated circuits
• CPC Class Codes: H03F 3/245 with semiconductor devices only
• CPC Class Codes: H03F 3/68 Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics power amplifiers using a combination of several semiconductor amplifiers H03F3/211; combinations of amplifiers using coupling networks with distributed constants H03F3/602

Abstract

The embodiments described herein provide compensation for mutual inductance in a multi-path device. In one embodiment, a device includes a multi-path integrated device. The multi-path integrated device includes a first output and a second output. The first output is configured to be coupled to a first output lead through a first bonding wire, and the second output is configured to be coupled to a second output lead through a second bonding wire. Due to their proximity, the second bonding wire has a first mutual inductance with the first bonding wire. A first compensation network is coupled to the first output, and a second compensation network is coupled to the second output. The second compensation network is configured to have a second mutual inductance with the first compensation network. The second mutual inductance at least partially cancels the effects of the first mutual inductance.

Claims

1. An apparatus comprising:

a first output lead;

a second output lead;

a multi-path device, the multi-path device having a first amplifier with a first output, and a second amplifier with a second output;

a first set of multiple parallel bonding wires coupling the first output of the first amplifier with the first output lead;

a second set of multiple parallel bonding wires coupling the second output of the second amplifier with the second output lead, wherein the second set of bonding wires has a first mutual inductance with the first set of bonding wires;

a first compensation network coupled in series with the first set of multiple parallel bonding wires between the first output and the first output lead; and

a second compensation network coupled in series with the second set of multiple parallel bonding wires between the second output and the second output lead, the second compensation network configured to have a second mutual inductance with the first compensation network, the second mutual inductance configured to at least partially cancel effects of the first mutual inductance.

2. The apparatus of claim 1 wherein the first compensation network is coupled between the first bonding wire and the first output lead and wherein the second compensation network is coupled between the second bonding wire and the second output lead.

3. The apparatus of claim 2 wherein the first compensation network and the second compensation network comprise proximate conductors that provide the second mutual inductance in the form of a negative mutual inductance compared to the first mutual inductance between the first bonding wire and the second bonding wire.

4. An apparatus comprising:

a multi-path integrated device, the multi-path integrated device having a first output and a second output, where the first output is configured to be coupled to a first output lead through a first bonding wire and where the second output is configured to be coupled to a second output lead through a second bonding wire, and where the second bonding wire has a first mutual inductance with the first bonding wire; and

a first compensation network coupled to the first output and a second compensation network coupled to the second output, the second compensation network configured to have a second mutual inductance with the first compensation network, the second mutual inductance configured to at least partially cancel effects of the first mutual inductance, wherein the first compensation network and the second compensation network comprise bonding wires having a relative coiling direction opposite the first bonding wire and the second bonding wire.

5. An apparatus comprising:

a multi-path integrated device, the multi-path integrated device having a first output and a second output, where the first output is configured to be coupled to a first output lead through a first bonding wire and where the second output is configured to be coupled to a second output lead through a second bonding wire, and where the second bonding wire has a first mutual inductance with the first bonding wire; and

a first compensation network coupled to the first output and a second compensation network coupled to the second output, the second compensation network configured to have a second mutual inductance with the first compensation network, the second mutual inductance configured to at least partially cancel effects of the first mutual inductance, wherein the first compensation network and the second compensation network comprise interleaved integrated passive inductors.

6. An apparatus comprising:

a multi-path integrated device, the multi-path integrated device having a first output and a second output, where the first output is configured to be coupled to a first output lead through a first bonding wire and where the second output is configured to be coupled to a second output lead through a second bonding wire, and where the second bonding wire has a first mutual inductance with the first bonding wire; and

a first compensation network coupled to the first output and a second compensation network coupled to the second output, the second compensation network configured to have a second mutual inductance with the first compensation network, the second mutual inductance configured to at least partially cancel effects of the first mutual inductance, wherein the first compensation network is coupled between the multi-path integrated device and the first bonding wire and wherein the second compensation network is coupled between the multi-path integrated device and the second bonding wire.

7. The apparatus of claim 6 wherein the first compensation network and the second compensation network comprise integrated passive inductors.

8. The apparatus of claim 7 wherein the integrated passive inductors are interleaved to provide the second mutual inductance in the form of a negative mutual inductance compared to the first mutual inductance between the first bonding wire and the second bonding wire.

9. An apparatus comprising:

a multi-path integrated device, the multi-path integrated device having a first output and a second output, where the first output is configured to be coupled to a first output lead through a first bonding wire and where the second output is configured to be coupled to a second output lead through a second bonding wire, and where the second bonding wire has a first mutual inductance with the first bonding wire; and

a first compensation network coupled to the first output and a second compensation network coupled to the second output, the second compensation network configured to have a second mutual inductance with the first compensation network, the second mutual inductance configured to at least partially cancel effects of the first mutual inductance, wherein the multi-path integrated device comprises a first amplifier and a second amplifier, the first amplifier coupled to the first output and the second amplifier coupled to the second output.

10. The apparatus of claim 9 wherein the first amplifier is a main amplifier of a Doherty amplifier, and the second amplifier is a peaking amplifier of the Doherty amplifier.

11. An apparatus comprising:

a multi-path integrated device, the multi-path integrated device having a first output and a second output, where the first output is configured to be coupled to a first output lead through a first bonding wire and where the second output is configured to be coupled to a second output lead through a second bonding wire, and where the second bonding wire has a first mutual inductance with the first bonding wire; and

a first compensation network coupled to the first output and a second compensation network coupled to the second output, the second compensation network configured to have a second mutual inductance with the first compensation network, the second mutual inductance configured to at least partially cancel effects of the first mutual inductance, wherein the multi-path integrated device additionally comprises a first input and a second input, where the first input is configured to be coupled to a first input lead through a third bonding wire and where the second input is configured to be coupled to a second input lead through a fourth bonding wire, and where the third bonding wire has a third mutual inductance with the fourth bonding wire, and wherein the apparatus further comprises;

a third compensation network coupled to the first input and a fourth compensation network coupled to the second input, the fourth compensation network configured to have a fourth mutual inductance with the third compensation network, the fourth mutual inductance configured to at least partially cancel effects of the third mutual inductance.

12. A packaged integrated circuit device comprising:

one or more semiconductor die including a multi-path amplifier, the multi-path amplifier including a first output and a second output;

a package encasing the semiconductor die, the package including a first output lead and a second output lead, the first output lead coupled to the first output through a first bonding wire and the second output lead coupled to the second output through a second bonding wire, where the second bonding wire has a first mutual inductance with the first bonding wire; and

a first compensation network coupled to the first output and a second compensation network coupled to the second output, the second compensation network configured to have a second mutual inductance with the first compensation network, the second mutual inductance configured to at least partially cancel effects of the first mutual inductance.

13. The packaged integrated circuit device of claim 12 wherein the first compensation network is coupled between the first bonding wire and the first output lead and wherein the second compensation network is coupled between the second bonding wire and the second output lead.

14. The packaged integrated circuit device of claim 12 wherein the first compensation network is coupled between the multi-path amplifier and the first bonding wire and wherein the second compensation network is coupled between the multi-path amplifier and the second bonding wire.

15. The packaged integrated circuit device of claim 14 wherein the first compensation network and the second compensation network comprise interleaved integrated passive inductors.

16. The packaged integrated circuit device of claim 12 wherein the multi-path amplifier additionally comprises a first input and a second input, and wherein the package further includes a first input lead and a second input lead, the first input lead coupled to the first input through a third bonding wire and the second input lead coupled to the second input through a fourth bonding wire, and where the third bonding wire has a third mutual inductance with the fourth bonding wire, and wherein the packaged integrated circuit device further comprises:

a third compensation network coupled to the first input and a fourth compensation network coupled to the second input, the fourth compensation network configured to have a fourth mutual inductance with the third compensation network, the fourth mutual inductance configured to at least partially cancel effects of the third mutual inductance.

17. A method comprising:

providing a semiconductor die including a multi-path device, the multi-path device including a first output and a second output;

coupling a first output lead to the first output through a first bonding wire;

coupling a second output lead to the second output through a second bonding wire, where the second bonding wire has a first mutual inductance with the first bonding wire;

coupling a first compensation network to the first output; and

coupling a second compensation network to the second output, the second compensation network configured to have a second mutual inductance with the first compensation network, the second mutual inductance configured to at least partially cancel effects of the first mutual inductance.

18. The method of claim 17 wherein the first compensation network is coupled between the first bonding wire and the first output lead and wherein the second compensation network is coupled between the second bonding wire and the second output lead.

19. The method of claim 17 wherein the first compensation network is coupled between the multi-path device and the first bonding wire and wherein the second compensation network is coupled between the multi-path device and the second bonding wire.

20. The method of claim 17 wherein the multi-path device additionally comprises a first input and a second input, and further comprising:

coupling the first input to a first input lead through a third bonding wire;

coupling the second input to a second input lead through a fourth bonding wire, where the third bonding wire has a third mutual inductance with the fourth bonding wire;

coupling a third compensation network to the first input; and

coupling a fourth compensation network to the second input, the fourth compensation network configured to have a fourth mutual inductance with the third compensation network, the fourth mutual inductance configured to at least partially cancel effects of the third mutual inductance.