Radio-frequency switch having dynamic body coupling

• US 9,628,075 B2
• Filed: 09/02/2015
• Issued: 04/18/2017
• Est. Priority Date: 07/07/2012
• Status: Active Grant

• Current Assignee: Skyworks Solutions Incorporated
• Original Assignee: Skyworks Solutions Incorporated
• Inventors: Cebi, Haki, Madan, Anuj, Altunkilic, Fikret, Blin, Guillaume Alexandre
• Primary Examiner(s): Donovan, Lincoln
• Assistant Examiner(s): SKIBINSKI, THOMAS S
• Application Number:
  US14/843,212
• Publication Number:
  US 20150381171A1
• Time in Patent Office: 594 Days
• Field of Search: 327534, 327535, 327537, 327384, 327427, 327434, 327437, 455 78
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H03K 17/687 the devices being field-effect transistors
• CPC Class Codes: H03K 17/693 Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors logic circuits H03K19/00; code converters H03M5/00, H03M7/00

Abstract

Radio-frequency (RF) switch circuits are disclosed including at least one first field-effect transistor (FET) disposed between first and second nodes, each of the at least one first FET having a respective body and gate. The RF switch circuit may include a coupling circuit that couples the respective body and gate of the at least one first FET, the coupling circuit configured to be switchable between a resistive-coupling mode and a body-floating mode, as well as an adjustable-resistance circuit connected to either or both of the respective gate and body of the at least one FET, the adjustable-resistance circuit including a resistor in parallel with a bypass switch.

Claims

1. A radio-frequency switch comprising:

a first field-effect transistor disposed between first and second nodes, the first field-effect transistor having a body and a gate;

a coupling circuit that couples the body and the gate of the first field-effect transistor, the coupling circuit including a second field-effect transistor connected in series with a first resistor; and

an adjustable-resistance circuit connected to the body of the first field-effect transistor, the adjustable-resistance circuit including a second resistor in series with a parallel combination of a third resistor and a bypass switch.

2. The radio-frequency switch of claim 1 wherein the first field-effect transistor is a silicon-on-insulator field-effect transistor.

3. The radio-frequency switch of claim 1 wherein the second field-effect transistor is OFF when the first field-effect transistor is ON to yield a body-floating mode.

4. The radio-frequency switch of claim 3 wherein the second field-effect transistor is ON when the first field-effect transistor is OFF to yield a resistive-coupling mode.

5. The radio-frequency switch of claim 1 further comprising a gate bias resistor connected to a gate of the second field-effect transistor.

6. The radio-frequency switch of claim 1 wherein the first node is configured to receive a radio-frequency signal having a power value and the second node is configured to output the radio-frequency signal when the first field-effect transistor is in an ON state.

7. The radio-frequency switch of claim 6 further comprising N field-effect transistors connected in series with the first field-effect transistor, the quantity N selected to allow the radio-frequency switch to handle the power of the radio-frequency signal.

8. A semiconductor die comprising:

a semiconductor substrate;

a first field-effect transistor formed on the semiconductor substrate;

a coupling circuit that couples a body and a gate of the first field-effect transistor, the coupling circuit including a second field-effect transistor connected in series with a first resistor; and

an adjustable-resistance circuit connected to the body of the first field-effect transistor, the adjustable-resistance circuit including a second resistor in series with a parallel combination of a third resistor and a bypass switch.

9. The die of claim 8 further comprising an insulator layer disposed between the first field-effect transistor and the semiconductor substrate.

10. The die of claim 9 wherein the die is a silicon-on-insulator die.

11. The die of claim 9 wherein the second field-effect transistor is OFF when the first field-effect transistor is ON to yield a body-floating mode.

12. A radio-frequency switch module comprising:

a packaging substrate configured to receive a plurality of components;

a semiconductor die mounted on the packaging substrate, the die including a first field-effect transistor;

a coupling circuit that couples a body of the first field-effect transistor and a gate of the first field-effect transistor, the coupling circuit including a second field-effect transistor connected in series with a first resistor; and

an adjustable-resistance circuit connected to the body of the first field-effect transistor, the adjustable-resistance circuit including a second resistor in series with a parallel combination of a third resistor and a bypass switch.

13. The switch module of claim 12 wherein the semiconductor die is a silicon-on-insulator die.

14. The switch module of claim 12 wherein the coupling circuit is part of the same semiconductor die as the first field-effect transistor.

15. The switch module of claim 12 wherein the coupling circuit is part of a second die mounted on the packaging substrate.

16. The switch module of claim 12 wherein the coupling circuit is disposed at a location outside of the semiconductor die.