Semiconductor material doping

  • US 9,634,183 B2
  • Filed: 03/14/2016
  • Issued: 04/25/2017
  • Est. Priority Date: 12/04/2009
  • Status: Active Grant
First Claim
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1. A method of fabricating a group III nitride semiconductor structure, the method comprising:

  • designing a superlattice layer including a quantum well and an immediately adjacent barrier to facilitate a real space transfer of holes across the immediately adjacent barrier, wherein the designing includes;

    selecting a target valence band discontinuity between the quantum well and the immediately adjacent barrier such that a dopant energy level of a barrier dopant in the immediately adjacent barrier is at least one of;

    within three thermal energies of a valence energy band edge for the quantum well or substantially aligned with a ground state energy for free carriers in a valence energy band for the quantum well; and

    selecting a target thickness of each of the quantum well and the adjacent barrier based on a characteristic size of a wave function for the dopant in the immediately adjacent barrier, wherein the target thickness is less than the characteristic size; and

    forming the quantum well and the adjacent barrier in the structure using group III nitride materials having an actual valence band discontinuity corresponding to the target valence band discontinuity, and actual thicknesses equal to or less than the target thicknesses.

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