Semiconductor device, structure and methods

  • US 9,640,531 B1
  • Filed: 01/28/2015
  • Issued: 05/02/2017
  • Est. Priority Date: 01/28/2014
  • Status: Active Grant
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First Claim
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1. A monolithic 3D semiconductor device, comprising:

  • a first layer comprising first transistors;

    a second layer overlaying said first layer, said second layer comprising second transistors,wherein said second layer comprises at least one thru layer via with a diameter less than 200 nm,wherein said second layer comprises an oscillator, andwherein said oscillator has a frequency stability of less than 100 ppm error/°

    C.

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