Semiconductor device and manufacturing method therefor

  • US 9,640,624 B2
  • Filed: 01/06/2014
  • Issued: 05/02/2017
  • Est. Priority Date: 06/06/2013
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor device active region;

    an electrode shape controlling layer disposed on the semiconductor device active region, the electrode shape controlling layer containing aluminum, the content of aluminum in all or part of the electrode shape controlling layer being changed in a direction from bottom to up from the semiconductor device active region;

    an electrode region disposed on the electrode shape controlling layer, the electrode region including a groove extended toward the semiconductor device active region and penetrating through the electrode shape controlling layer longitudinally, all or part of a side surface of the groove having a shape corresponding to the content of aluminum in the electrode shape controlling layer; and

    an electrode disposed in the groove in the electrode region entirely or partially, the electrode having a shape matching with the shape of the groove, a bottom portion of the electrode being contacted with the semiconductor device active region.

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