Light shielding pattern pixel structure having a one side overlapping scan line
First Claim
1. A pixel structure, comprising:
- a scan line and a data line intersecting each other;
an active device, electrically connected to the scan line and the data line, wherein the active device comprises;
a semiconductor layer, comprising a source region, a drain region, a channel region, a source lightly doped region, and a drain lightly doped region, wherein the channel region is located between the source region and the drain region, the source lightly doped region is located between the channel region and the source region, and the drain lightly doped region is located between the channel region and the drain region;
an insulating layer, covering the semiconductor layer;
a gate electrode, located on the insulating layer above the channel region and electrically connected to the scan line;
a protection layer, covering the gate electrode; and
a source electrode and a drain electrode, located on the protection layer and respectively electrically connected to the source region and the drain region, wherein the source electrode is electrically connected to the data line;
a pixel electrode, electrically connected to the drain electrode; and
a light shielding pattern, shielding the source region, the drain region, the source lightly doped region and the drain lightly doped region of the semiconductor layer, wherein the light shielding pattern is overlapped with a side of the scan line and not overlapped with another side of the scan line.
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Accused Products
Abstract
An active device of a pixel structure includes a semiconductor layer, an insulation layer covering the semiconductor layer, a gate electrode disposed on the insulation layer and electrically connected to a scan line, a protection layer covering the gate electrode, a source electrode and a drain electrode electrically connected to a source region and a drain region of the semiconductor layer. A channel region is disposed between the source region and the drain region. A source lightly doped region is disposed between the channel region and the source region. A drain lightly doped region is disposed between the channel region and the drain region. The light shielding pattern shields the source region, the drain region, the source lightly doped region and the drain lightly doped region. The light shielding pattern is overlapped with one side of the scan line and not overlapped with another side of the scan line.
33 Citations
14 Claims
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1. A pixel structure, comprising:
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a scan line and a data line intersecting each other; an active device, electrically connected to the scan line and the data line, wherein the active device comprises; a semiconductor layer, comprising a source region, a drain region, a channel region, a source lightly doped region, and a drain lightly doped region, wherein the channel region is located between the source region and the drain region, the source lightly doped region is located between the channel region and the source region, and the drain lightly doped region is located between the channel region and the drain region; an insulating layer, covering the semiconductor layer; a gate electrode, located on the insulating layer above the channel region and electrically connected to the scan line; a protection layer, covering the gate electrode; and a source electrode and a drain electrode, located on the protection layer and respectively electrically connected to the source region and the drain region, wherein the source electrode is electrically connected to the data line; a pixel electrode, electrically connected to the drain electrode; and a light shielding pattern, shielding the source region, the drain region, the source lightly doped region and the drain lightly doped region of the semiconductor layer, wherein the light shielding pattern is overlapped with a side of the scan line and not overlapped with another side of the scan line. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification