Method of manufacturing a device comprising an integrated circuit and photovoltaic cells

• US 9,647,161 B2
• Filed: 10/28/2014
• Issued: 05/09/2017
• Est. Priority Date: 10/29/2013
• Status: Expired due to Fees

• Current Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Original Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Inventors: Buckley, Julien, Ben Jamaa, Haykel
• Primary Examiner(s): Armand, Marc
• Assistant Examiner(s): TANG, SUIAN
• Application Number:
  US14/525,899
• Publication Number:
  US 20150115387A1
• Time in Patent Office: 924 Days
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 31/0475 PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays PV modules composed of a plurality of thin film solar cells deposited on the same substrate H01L31/046
• CPC Class Codes: H01L 31/0504 specially adapted for series or parallel connection of solar cells in a module
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

According to one embodiment, the present invention relates to a method for manufacturing a photovoltaic device comprising a photovoltaic cell or a plurality of photovoltaic cells (PV cells) connected to an electronic integrated circuit having at least one electrical contact area. A stack comprising the PV cell(s) is produced separately from the electronic integrated circuit, the electronic integrated circuit is then transferred to said stack comprising the PV cell(s). During this transfer, connection areas carried by the PV cell(s) are brought into contact with matching connection areas carried by the electronic integrated circuit.

Claims

1. A method for manufacturing a photovoltaic device comprising at least one photovoltaic cell (PV cell) connected to an electronic integrated circuit, the method comprising the following steps:

providing a stack comprising a substrate topped with an insulating layer and a semi-conducting layer, the semi-conducting layer comprising at least one upper portion extending from an upper face of the semi-conducting layer and having a P or N doping, and a lower portion located under the upper portion and having a P or N doping opposite to the doping of the upper portion;

forming the at least one PV cell in the stack by etching the semi-conducting layer so as to form one or more island(s) distant from each other, each island comprising a superimposition of the lower and upper portions of the semi-conducting layer, and having a front face formed by the upper portion, each island forming a respective PV cell;

forming first connections comprising at least one receiving area located on a front face of the insulating layer, intended to electrically connect the at least one PV cell with the electronic integrated circuit; and

transferring, onto said stack comprising the at least one PV cell, a previously manufactured electronic integrated circuit, with the step of transfer being executed so as to electrically connect the at least one receiving area with an electrical contact area carried by the electronic integrated circuit,

wherein the step of forming each island by etching the semi-conducting layer is executed so as to preserve, at the root of each island a contact area formed in said lower portion of the semi-conducting layer and which is not located under said upper portion,

wherein the contact area is doped so as to make it electrically conducting.

2. The method according to claim 1, wherein the photovoltaic device comprises a plurality of PV cells, further comprising forming a plurality of second electric connections to interconnect the plurality of PV cells by forming an electric connection connecting the contact area of a PV cell to said front face of another PV cell.

3. A method for manufacturing a photovoltaic device comprising at least one photovoltaic cell (PV cell) connected to an electronic integrated circuit, the method comprising the following steps:

providing a stack comprising a substrate topped with an insulating layer and a semi-conducting layer, the semi-conducting layer comprising at least one upper portion extending from an upper face of the semi-conducting layer and having a P or N doping, and a lower portion located under the upper portion and having a P or N doping opposite to the doping of the upper portion;

forming the at least one PV cell in the stack by etching the semi-conducting layer so as to form one or more island(s) distant from each other, each island comprising a superimposition of the lower and upper portions of the semi-conducting layer, and having a front face formed by the upper portion, each island forming a respective PV cell;

forming first connections comprising at least one receiving area located on a front face of the insulating layer, intended to electrically connect the at least one PV cell with the electronic integrated circuit; and

transferring, onto said stack comprising the at least one PV cell, a previously manufactured electronic integrated circuit, with the step of transfer being executed so as to electrically connect the at least one receiving area with an electrical contact area carried by the electronic integrated circuit,

wherein the stack comprising a substrate topped with an insulating layer is obtained by executing the following steps from a massive substrate made of a semi-conducting material;

N or P type doping of an upper part of the massive substrate to form the insulating layer of said stack;

transfer onto the upper part of a semi-conducting layer having a doping opposite that of the upper part of the massive substrate;

thinning of said transferred semi-conducting layer;

doping of the upper face of said transferred semi-conducting layer so that such transferred semi-conducting layer has an upper portion extending from the upper face thereof and having an opposite doping of a lower portion formed by the rest of said transferred semi-conducting layer.

4. A method for manufacturing a photovoltaic device comprising at least one photovoltaic cell (PV cell) connected to an electronic integrated circuit, the method comprising the following steps:

providing a stack comprising a substrate topped with an insulating layer and a semi-conducting layer, the semi-conducting layer comprising at least one upper portion extending from an upper face of the semi-conducting layer and having a P or N doping, and a lower portion located under the upper portion and having a P or N doping opposite to the doping of the upper portion;

forming the at least one PV cell in the stack by etching the semi-conducting layer so as to form one or more island(s) distant from each other, each island comprising a superimposition of the lower and upper portions of the semi-conducting layer, and having a front face formed by the upper portion, each island forming a respective PV cell;

forming first connections comprising at least one receiving area located on a front face of the insulating layer, intended to electrically connect the at least one PV cell with the electronic integrated circuit; and

transferring, onto said stack comprising the at least one PV cell, a previously manufactured electronic integrated circuit, with the step of transfer being executed so as to electrically connect the at least one receiving area with an electrical contact area carried by the electronic integrated circuit,

wherein the step of forming each island by etching the semi-conducting layer is executed so as to preserve, at the root of each island a contact area formed in said lower portion of the semi-conducting layer and which is not located under said upper portion,

wherein the contact area is doped so as to make it electrically conducting,

wherein the stack comprising a substrate topped with an insulating layer and a semi-conducting layer is a substrate of the silicon on insulator (SOI) type wherein the insulating layer is made of a silicon oxide and wherein a step of doping the upper face of the semi-conducting layer is executed from the SOI substrate, so that the semi-conducting layer comprises said upper portion having a doping opposite that of said lower portion formed by the rest of the semi-conducting layer, and

wherein said lower portion is formed of a first thickness portion having a P or N doping and another also P respectively N doped thickness portion but the doping level of which is at least 100 times greater than that of the first portion and is at least equal to 1 atom of the doping species for less than 1,000 atoms of the material forming the semi-conducting layer (P+ respectively N+ doping), said other portion being located between the insulating layer and said first P respectively N doped thickness portion and wherein said other thickness portion is in contact with the insulating layer and with said first thickness portion.

5. A method for manufacturing a photovoltaic device comprising at least one photovoltaic cell (PV cell) connected to an electronic integrated circuit, the method comprising the following steps:

providing a stack comprising a substrate topped with an insulating layer and a semi-conducting layer, the semi-conducting layer comprising at least one upper portion extending from an upper face of the semi-conducting layer and having a P or N doping, and a lower portion located under the upper portion and having a P or N doping opposite to the doping of the upper portion;

forming the at least one PV cell in the stack by etching the semi-conducting layer so as to form one or more island(s) distant from each other, each island comprising a superimposition of the lower and upper portions of the semi-conducting layer, and having a front face formed by the upper portion, each island forming a respective PV cell;

forming first connections comprising at least one receiving area located on a front face of the insulating layer, intended to electrically connect the at least one PV cell with the electronic integrated circuit; and

transferring, onto said stack comprising the at least one PV cell, a previously manufactured electronic integrated circuit, with the step of transfer being executed so as to electrically connect the at least one receiving area with an electrical contact area carried by the electronic integrated circuit,

wherein said providing a stack comprises

providing a first substrate containing said PV cell;

providing a second substrate including a bulk substrate with an insulating layer thereon; and

joining the first and second substrate,

further comprising, prior to said joining, forming transverse metal pads in the first substrate, and forming lateral metal pads in the second substrate, wherein said joining comprises bonding the transverse metal pads to the lateral metal pads.