Gate insulator layer for organic electronic devices

• US 9,647,222 B2
• Filed: 08/11/2015
• Issued: 05/09/2017
• Est. Priority Date: 09/02/2010
• Status: Active Grant

• Current Assignee: Flexenable Technology Limited, Merck Patent GmbH (Merck & Co., Inc.), Promerus, LLC (Sumitomo Bakelite Company Limited)
• Original Assignee: Merck Patent GmbH (Merck & Co., Inc.), Promerus, LLC (Sumitomo Bakelite Company Limited)
• Inventors: Mller, David Christoph, Cull, Toby, Miskiewicz, Pawel, Carrasco-Orozco, Miguel, Bell, Andrew, Elce, Edmund, Rhodes, Larry F., Fujita, Kazuyoshi, Ng, Hendra, Kandanarachchi, Pramod, Smith, Steven
• Primary Examiner(s): Kaucher, Mark
• Assistant Examiner(s): HU, HENRY S
• Application Number:
  US14/823,066
• Publication Number:
  US 20150372246A1
• Time in Patent Office: 637 Days
• Field of Search: 257288, 526262, 526268
• CPC Class Codes: C08F 232/00 Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
• CPC Class Codes: C08F 32/04 having one carbon-to-carbon double bond
• CPC Class Codes: C08L 45/00 Compositions of homopolymers or copolymers of compounds having no unsaturated aliphatic radicals in side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic or in a heterocyclic ring system; Compositions of derivatives of such polymers of cyclic anhydrides or imides C08L35/00; of cyclic esters of polyfunctional acids C08L31/00
• CPC Class Codes: H10K 10/464 Lateral top-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/471 the gate dielectric comprising only organic materials
• CPC Class Codes: H10K 10/478 the gate dielectric comprising a layer of composite material comprising interpenetrating or embedded materials, e.g. TiO2 particles in a polymer matrix
• CPC Class Codes: H10K 10/88 Passivation; Containers; Encapsulations
• CPC Class Codes: H10K 85/111 comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
• CPC Class Codes: H10K 85/141 comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
• CPC Class Codes: H10K 85/151 Copolymers

Abstract

Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as gate insulator layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin gate insulator and processes for preparing such polycycloolefin gate insulator layers and electronic devices encompassing such layers.

Claims

1. A polymer composition for forming an organic gate insulating layer, said composition comprising a solvent, a norbornene-type polymer and one or more of (1) a crosslinking agent, (2) a UV sensitizer or (3) an adhesion promoter wherein the norbornene-type polymer comprises repeating units of the formula (I) derived from a norbornene-type monomer by addition polymerization,

2. The polymer composition of claim 1, wherein said monomer is selected from DMMIMeNB, DMMIEtNB, DMMIPrNB or DMMIBuNB

3. The polymer composition of claim 1, wherein the UV sensitizer is 1-chloro-4-propoxythioxanthone (CPTX) and the solvent is methyl n-amyl ketone (MAK), cyclohexanone or cyclopentanone.

4. The polymer composition of claim 1, wherein the crosslinking agent is DMMI-butylene-DMMI, DMMI-pentylene-DMMI or DMMI-hexylene-DMMI.

5. The polymer composition of claim 1, wherein the adhesion promoter is DMMI-propylene-Si(OEt)₃, DMMI-butylene-Si(OEt)₃, DMMI-butylene-Si(OMe)₃ or DMMI-hexylene-Si(OMe)₃.

6. The polymer composition of claim 1, wherein the monomer is BuNB, HexNB, OctNB, DecNB, NBC₄F₉ or PPVENB

7. The polymer composition of claim 1, wherein the polymer is derived from at least two monomers and said at least one monomer is BuNB, HexNB, OctNB or DecNB,

8. The polymer composition of claim 1, wherein the monomer is EONB, MGENB, DMMIMeNB, DMMIEtNB, DMMIPrNB, DMMIBuNB and DMMIHxNB

9. The polymer composition as claimed in claim 1, wherein R¹, R²′

, R³, and R⁴ are identical or different and are an hydrogen, C₁-C₂₅ alkyl, a C₂-C₂₄ alkenyl, a C₂-C₂₄ alkynyl, a C₅-C₂₅ cycloalkyl, a C₆-C₂₄ aryl or a C₇-C₂₄ aralkyl, or where at least one of the hydrogen atom in the alkyl, alkenyl, alkynyl, cycloalkyl, aryl or aralkyl is replaced by a halogen atom, or

ether, epoxy, glycidyl ether, alcohol, carboxylic acid, ester, ketone, anhydride, maleimide, amine, imine, amide, phenol, amido-phenol, silane, siloxane, phosphine, phosphine oxide, phosphinite, phosphonite, phosphite, phosphonate, phosphinate, or phosphate.

10. The polymer composition as claimed in claim 1, wherein the polymer has one or more the repeating units of the formula (I) and one or more repeating units of the formula (II)

11. The polymer composition of claim 1, wherein the crosslinking agent is DMMI-butylene-DMMI, DMMI-pentylene-DMMI or DMMI-hexylene-DMMI and the adhesion promoter is DMMI-propylene-Si(OEt)₃, DMMI-butylene-Si(OEt)₃, DMMI-butylene-Si(OMe)₃ or DMMI-hexylene-Si(OMe)₃.

12. A polymer composition for forming an organic gate insulating layer,

said polymer composition comprises (a) a solvent, (b) a norbornene-type polymer and (c) one or more of (1) a crosslinking agent, (2) a UV sensitizer or (3) an adhesion promoter, wherein the norbornene-type polymer comprises

repeating units derived from at least two monomers by addition polymerization, wherein said at least one monomer is selected from BuNB, HexNB, OctNB or DecNB,

13. A polymer composition for forming an organic gate insulating layer,

said polymer composition comprises (a) a solvent, (b) a norbornene-type polymer and (c) one or more of (1) a crosslinking agent, (2) a UV sensitizer or (3) an adhesion promoter, wherein the norbornene-type polymer comprises

repeating units derived from a norbornene-type monomer by addition polymerization, wherein said monomer is selected from EONB, MGENB, DMMIMeNB, DMMIEtNB, DMMIPrNB, DMMIBuNB and DMMIHxNB,