Vertical gate-all-around TFET
First Claim
1. A device, comprising:
- a substrate having a first surface and a second surface opposite the first surface, the substrate including a first portion and a second portion that each extend from the first surface to the second surface;
a diode including;
a doped well in the substrate, the doped well being positioned between the first portion and the second portion of the substrate, the doped well extending from the first surface to the second surface of the substrate;
a nanowire on and extending from the doped well from the first surface of the substrate;
a first contact on a first end of the nanowire; and
a second contact adjacent to a second end of the nanowire, where the second end of the nanowire is adjacent to the doped well.
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Accused Products
Abstract
A vertical tunneling FET (TFET) provides low-power, high-speed switching performance for transistors having critical dimensions below 7 nm. The vertical TFET uses a gate-all-around (GAA) device architecture having a cylindrical structure that extends above the surface of a doped well formed in a silicon substrate. The cylindrical structure includes a lower drain region, a channel, and an upper source region, which are grown epitaxially from the doped well. The channel is made of intrinsic silicon, while the source and drain regions are doped in-situ. An annular gate surrounds the channel, capacitively controlling current flow through the channel from all sides. The source is electrically accessible via a front side contact, while the drain is accessed via a backside contact that provides low contact resistance and also serves as a heat sink. Reliability of vertical TFET integrated circuits is enhanced by coupling the vertical TFETs to electrostatic discharge (ESD) diodes.
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Citations
25 Claims
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1. A device, comprising:
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a substrate having a first surface and a second surface opposite the first surface, the substrate including a first portion and a second portion that each extend from the first surface to the second surface; a diode including; a doped well in the substrate, the doped well being positioned between the first portion and the second portion of the substrate, the doped well extending from the first surface to the second surface of the substrate; a nanowire on and extending from the doped well from the first surface of the substrate; a first contact on a first end of the nanowire; and a second contact adjacent to a second end of the nanowire, where the second end of the nanowire is adjacent to the doped well. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A device, comprising:
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a substrate having a first side and a second side; a first well in the substrate having a first side and a second side opposite the first side, the first side of the first well being closer to the first side of the substrate than the second side of the substrate; a second well in the substrate having a first side and a second side opposite the first side, the first side of the second well being closer to the first side of the substrate than the second side of the substrate; an isolation region in the substrate between the first and second wells; a first nanowire on the first side of the first well and extending away from the first side of the substrate; a second nanowire on the first side of the second well and extending away from the first side of the substrate; a first contact on the first nanowire; a second contact on the second nanowire; a third contact on the second side of the first well; and a fourth contact on the second side of the second well. - View Dependent Claims (8, 9, 10)
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11. A device, comprising:
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a substrate having a first surface and a second surface opposite the first surface; a first contact on the first surface of the substrate; a nanowire having a first end on and extending away from the second surface of the substrate; a doped region in the substrate between the first contact and the nanowire; a second contact on a second end of the nanowire, the second contact having a first portion and a second portion wider than the first portion in a cross-sectional view, the first portion closer to the first end of the nanowire than the second portion. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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19. A device, comprising:
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a substrate having a first surface and a second surface opposite the first surface; a doped region in the substrate; a nanowire having a first end and a second end, the first end on the first surface of the substrate on the doped region; a first contact on the second end of the nanowire, the first contact including an extension that covers the second end of the nanowire and covers a first portion of sides of the nanowire, the first contact includes a first region adjacent to the extension and a second region adjacent to the first region, the second region having a larger area than the first region in a cross-sectional view. - View Dependent Claims (20, 21)
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22. A device, comprising:
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a substrate having a first side and a second side; a well in the substrate, the well extending from the first side to the second side of the substrate; a nanowire having a first end and a second end opposite the first end, the second end on the well, the nanowire extending from the well away from the first side of the substrate; a first contact on the first end of the nanowire; and a second contact on the well on the second side of the substrate. - View Dependent Claims (23, 24, 25)
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Specification