Semiconductor device and manufacturing method thereof

  • US 9,660,102 B2
  • Filed: 04/06/2015
  • Issued: 05/23/2017
  • Est. Priority Date: 02/27/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode layer;

    a gate insulating layer;

    an oxide semiconductor layer comprising a channel formation region adjacent to the gate electrode layer with the gate insulating layer therebetween, the oxide semiconductor layer including indium and oxygen; and

    source and drain electrode layers electrically connected to the oxide semiconductor layer,wherein the channel formation region includes a crystal grain which is 1 nm to 10 nm in diameter.

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