Group III nitride heterostructure for optoelectronic device

  • US 9,660,133 B2
  • Filed: 09/23/2014
  • Issued: 05/23/2017
  • Est. Priority Date: 09/23/2013
  • Status: Active Grant
First Claim
Patent Images

1. A heterostructure comprising:

  • a substrate;

    an AlN buffer layer located on the substrate;

    an AlxGa1-xN/Alx′

    Ga1-x′

    N first superlattice structure located on the buffer layer, wherein 0.6<

    x≦

    1, 0.1<

    x′

    <

    0.9, and x>

    x′

    , and wherein each layer in the first superlattice structure has a thickness less than or equal to one hundred nanometers;

    an AlyGa1-yN/Aly′

    Ga1-y′

    N second superlattice structure located on the first superlattice structure, wherein y′

    <

    x′

    , 0.6<

    y≦

    1, 0.1<

    y′

    <

    0.8, and y>

    y′

    , and wherein each layer in the second superlattice structure has a thickness less than one hundred nanometers;

    an AlzGa1-zN n-type layer located on the second superlattice structure, wherein 0.1<

    z<

    0.75 and z<

    y′

    ; and

    an AlbGa1-bN/AlqGa1-qN active structure located on the n-type layer, wherein b-q>

    0.05.

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