Nitride semiconductor device, nitride semiconductor wafer, and method for forming nitride semiconductor layer
First Claim
1. A nitride semiconductor device, comprising:
- a stacked body comprising;
a first Si-containing layer comprising Si at a concentration not less than 7×
1019/cm3 and not more than 4×
1020/cm3, the first Si-containing layer having an upper surface, the upper surface of the first Si-containing layer having a first region and a second region,a first GaN layer provided on the first region and including a protrusion having an oblique surface tilted with respect to the upper surface of the first Si-containing layer,a second Si-containing layer provided on the first GaN layer and comprising Si, a portion of the second Si-containing layer physically contacting the second region of the upper surface of the first Si-containing layer, anda second GaN layer provided on the second Si-containing layer and physically contacting the portion of the second Si-containing layer; and
a functional layer provided on the stacked body and including a nitride semiconductor,wherein the first Si-containing layer comprises a first plurality of discontinuous islands or is a first film having a first opening, andthe second Si-containing layer comprises a second plurality of discontinuous islands or is a second film having a second opening.
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Abstract
According to one embodiment, a nitride semiconductor device includes a stacked body and a functional layer. The stacked body includes an AlGaN layer of AlxGa1-xN (0<x≦1), a first Si-containing layer, a first GaN layer, a second Si-containing layer, and a second GaN layer. The first Si-containing layer contacts an upper surface of the AlGaN layer. The first Si-containing layer contains Si at a concentration not less than 7×1019/cm3 and not more than 4×1020/cm3. The first GaN layer is provided on the first Si-containing layer. The first GaN layer includes a protrusion having an oblique surface tilted with respect to the upper surface. The second Si-containing layer is provided on the first GaN layer. The second Si-containing layer contains Si. The second GaN layer is provided on the second Si-containing layer. The functional layer is provided on the stacked body. The functional layer includes a nitride semiconductor.
30 Citations
30 Claims
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1. A nitride semiconductor device, comprising:
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a stacked body comprising; a first Si-containing layer comprising Si at a concentration not less than 7×
1019/cm3 and not more than 4×
1020/cm3, the first Si-containing layer having an upper surface, the upper surface of the first Si-containing layer having a first region and a second region,a first GaN layer provided on the first region and including a protrusion having an oblique surface tilted with respect to the upper surface of the first Si-containing layer, a second Si-containing layer provided on the first GaN layer and comprising Si, a portion of the second Si-containing layer physically contacting the second region of the upper surface of the first Si-containing layer, and a second GaN layer provided on the second Si-containing layer and physically contacting the portion of the second Si-containing layer; and a functional layer provided on the stacked body and including a nitride semiconductor, wherein the first Si-containing layer comprises a first plurality of discontinuous islands or is a first film having a first opening, and the second Si-containing layer comprises a second plurality of discontinuous islands or is a second film having a second opening. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A nitride semiconductor wafer, comprising:
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a substrate; a buffer layer provided on the substrate and comprising a nitride semiconductor; and a stacked body provided on the buffer layer and comprising; a first Si-containing layer comprising Si at a concentration not less than 7×
1019/cm3 and not more than 4×
1020/cm3, the first Si-containing layer having an upper surface, the upper surface of the first Si-containing layer having a first region and a second region;a first GaN layer provided on the first region and including a protrusion having an oblique surface tilted with respect to the upper surface of the first Si-containing layer; a second Si-containing layer provided on the first GaN layer and comprising Si, a portion of the second Si-containing layer physically contacting the second region of the upper surface of the first Si-containing layer; and a second GaN layer provided on the second Si-containing layer and physically contacting the portion of the second Si-containing layer, wherein the first Si-containing layer comprises a first plurality of discontinuous islands or is a first film having a first opening, and the second Si-containing layer comprises a second plurality of discontinuous islands or is a second film having a second opening. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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20. A method for forming a nitride semiconductor layer, comprising:
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forming a first Si-containing layer on a buffer layer provided on a substrate, the buffer layer including a nitride semiconductor, the first Si-containing layer comprising Si at a concentration not less than 7×
1019/cm3 and not more than 4×
1020/cm3, such that the first Si-containing layer has an upper surface having a first region and a second region;forming a first GaN layer on the first region of the upper surface of the first Si-containing layer such that the first GaN layer includes a protrusion having an oblique surface tilted with respect to the upper surface of the first Si-containing layer; forming a second Si-containing layer comprising Si on the first GaN layer such that a portion of the second Si-containing layer physically contacts the second region of the upper surface of the first Si-containing layer; and forming a second GaN layer on the second Si-containing layer such that the second GaN layer physically contacts the portion of the second Si-containing layer, wherein the first Si-containing layer comprises a first plurality of discontinuous islands or is a first film having a first opening, and the second Si-containing layer comprises a second plurality of discontinuous islands or is a second film having a second opening. - View Dependent Claims (21)
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22. A nitride semiconductor device, comprising:
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a stacked body comprising; a first Si-containing layer comprising Si at a concentration not less than 7×
1019/cm3 and not more than 4×
1020/cm3, the first Si-containing layer having an upper surface, the upper surface of the first Si-containing layer having a first region and a second region,a first GaN layer provided on the first region and including a protrusion having an oblique surface tilted with respect to the upper surface of the first Si-containing layer, a second Si-containing layer provided on the first GaN layer and comprising Si, a portion of the second Si-containing layer physically contacting the second region of the upper surface of the first Si-containing layer, and a second GaN layer provided on the second Si-containing layer and physically contacting the portion of the second Si-containing layer; and a functional layer provided on the stacked body and including a nitride semiconductor, wherein the first Si-containing layer comprises a plurality of discontinuous islands or is a film having an opening, and the second Si-containing layer comprises SiN.
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23. A nitride semiconductor device, comprising:
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a stacked body comprising; a first Si-containing layer comprising Si at a concentration not less than 7×
1019/cm3 and not more than 4×
1020/cm3, the first Si-containing layer having an upper surface, the upper surface of the first Si-containing layer having a first region and a second region,a first GaN layer provided on the first region and including a protrusion having an oblique surface tilted with respect to the upper surface of the first Si-containing layer, a second Si-containing layer provided on the first GaN layer and comprising Si, a portion of the second Si-containing layer physically contacting the second region of the upper surface of the first Si-containing layer, and a second GaN layer provided on the second Si-containing layer and physically contacting the portion of the second Si-containing layer; and a functional layer provided on the stacked body and including a nitride semiconductor, wherein the first Si-containing layer comprises SiN, and the second Si-containing layer comprises a plurality of discontinuous islands or is a film having an opening.
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24. A nitride semiconductor device, comprising:
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a stacked body comprising; a first Si-containing layer comprising Si at a concentration not less than 7×
1019/cm3 and not more than 4×
1020/cm3, the first Si-containing layer having an upper surface, the upper surface of the first Si-containing layer having a first region and a second region,a first GaN layer provided on the first region and including a protrusion having an oblique surface tilted with respect to the upper surface of the first Si-containing layer, a second Si-containing layer provided on the first GaN layer and comprising Si, a portion of the second Si-containing layer physically contacting the second region of the upper surface of the first Si-containing layer, and a second GaN layer provided on the second Si-containing layer and physically contacting the portion of the second Si-containing layer; and a functional layer provided on the stacked body and including a nitride semiconductor, wherein each of the first Si-containing layer and the second Si-containing layer comprises SiN.
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25. A nitride semiconductor wafer, comprising:
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a substrate; a buffer layer provided on the substrate and comprising a nitride semiconductor; and a stacked body provided on the buffer layer and comprising; a first Si-containing layer comprising Si at a concentration not less than 7×
1019/cm3 and not more than 4×
1020/cm3, the first Si-containing layer having an upper surface, the upper surface of the first Si-containing layer having a first region and a second region;a first GaN layer provided on the first region and including a protrusion having an oblique surface tilted with respect to the upper surface of the first Si-containing layer; a second Si-containing layer provided on the first GaN layer and comprising Si, a portion of the second Si-containing layer physically contacting the second region of the upper surface of the first Si-containing layer; and a second GaN layer provided on the second Si-containing layer and physically contacting the portion of the second Si-containing layer, wherein the first Si-containing layer comprises a plurality of discontinuous islands or is a film having an opening, and the second Si-containing layer comprises SiN.
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26. A nitride semiconductor wafer, comprising:
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a substrate; a buffer layer provided on the substrate and comprising a nitride semiconductor; and a stacked body provided on the buffer layer and comprising; a first Si-containing layer comprising Si at a concentration not less than 7×
1019/cm3 and not more than 4×
1020/cm3, the first Si-containing layer having an upper surface, the upper surface of the first Si-containing layer having a first region and a second region;a first GaN layer provided on the first region and including a protrusion having an oblique surface tilted with respect to the upper surface of the first Si-containing layer; a second Si-containing layer provided on the first GaN layer and comprising Si, a portion of the second Si-containing layer physically contacting the second region of the upper surface of the first Si-containing layer; and a second GaN layer provided on the second Si-containing layer and physically contacting the portion of the second Si-containing layer, wherein the first Si-containing layer comprises SiN, and the second Si-containing layer comprises a plurality of discontinuous islands or is a film having an opening.
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27. A nitride semiconductor wafer, comprising:
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a substrate; a buffer layer provided on the substrate and comprising a nitride semiconductor; and a stacked body provided on the buffer layer and comprising; a first Si-containing layer comprising Si at a concentration not less than 7×
1019/cm3 and not more than 4×
1020/cm3, the first Si-containing layer having an upper surface, the upper surface of the first Si-containing layer having a first region and a second region;a first GaN layer provided on the first region and including a protrusion having an oblique surface tilted with respect to the upper surface of the first Si-containing layer; a second Si-containing layer provided on the first GaN layer and comprising Si, a portion of the second Si-containing layer physically contacting the second region of the upper surface of the first Si-containing layer; and a second GaN layer provided on the second Si-containing layer and physically contacting the portion of the second Si-containing layer, wherein each of the first Si-containing layer and the second Si-containing layer comprises SiN.
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28. A method for forming a nitride semiconductor layer, comprising:
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forming a first Si-containing layer on a buffer layer provided on a substrate, the buffer layer including a nitride semiconductor, the first Si-containing layer comprising Si at a concentration not less than 7×
1019/cm3 and not more than 4×
1020/cm3, such that the first Si-containing layer has an upper surface having a first region and a second region;forming a first GaN layer on the first region of the upper surface of the first Si-containing layer such that the first GaN layer includes a protrusion having an oblique surface tilted with respect to the upper surface of the first Si-containing layer; forming a second Si-containing layer comprising Si on the first GaN layer such that a portion of the second Si-containing layer physically contacts the second region of the upper surface of the first Si-containing layer; and forming a second GaN layer on the second Si-containing layer such that the second GaN layer physically contacts the portion of the second Si-containing layer, wherein the first Si-containing layer comprises a plurality of discontinuous islands or is a film having an opening, and the second Si-containing layer comprises SiN.
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29. A method for forming a nitride semiconductor layer, comprising:
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forming a first Si-containing layer on a buffer layer provided on a substrate, the buffer layer including a nitride semiconductor, the first Si-containing layer comprising Si at a concentration not less than 7×
1019/cm3 and not more than 4×
1020/cm3, such that the first Si-containing layer has an upper surface having a first region and a second region;forming a first GaN layer on the first region of the upper surface of the first Si-containing layer such that the first GaN layer includes a protrusion having an oblique surface tilted with respect to the upper surface of the first Si-containing layer; forming a second Si-containing layer comprising Si on the first GaN layer such that a portion of the second Si-containing layer physically contacts the second region of the upper surface of the first Si-containing layer; and forming a second GaN layer on the second Si-containing layer such that the second GaN layer physically contacts the portion of the second Si-containing layer, wherein the first Si-containing layer comprises SiN, and the second Si-containing layer comprises a plurality of discontinuous islands or is a film having an opening.
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30. A method for forming a nitride semiconductor layer, comprising:
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forming a first Si-containing layer on a buffer layer provided on a substrate, the buffer layer including a nitride semiconductor, the first Si-containing layer comprising Si at a concentration not less than 7×
1019/cm3 and not more than 4×
1020/cm3, such that the first Si-containing layer has an upper surface having a first region and a second region;forming a first GaN layer on the first region of the upper surface of the first Si-containing layer such that the first GaN layer includes a protrusion having an oblique surface tilted with respect to the upper surface of the first Si-containing layer; forming a second Si-containing layer comprising Si on the first GaN layer such that a portion of the second Si-containing layer physically contacts the second region of the upper surface of the first Si-containing layer; and forming a second GaN layer on the second Si-containing layer such that the second GaN layer physically contacts the portion of the second Si-containing layer, wherein each of the first Si-containing layer and the second Si-containing layer comprises SiN.
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Specification