AMOLED array substrate, producing method thereof and display apparatus

• US 9,691,834 B2
• Filed: 08/28/2014
• Issued: 06/27/2017
• Est. Priority Date: 04/30/2014
• Status: Active Grant

• Current Assignee: BOE Technology Group Co., Ltd.
• Original Assignee: BOE Technology Group Co., Ltd.
• Inventors: Li, Zhongjun, Wang, Jiliang
• Primary Examiner(s): NGUYEN, CUONG QUANG
• Application Number:
  US14/648,191
• Publication Number:
  US 20160268361A1
• Time in Patent Office: 1,034 Days
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/1216 the pixel elements being capacitors
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals

Abstract

The present disclosure provides an active matrix organic light-emitting diode array substrate comprising: a substrate; a plurality of pixel units located on the substrate and arranged in an array, each of the plurality of pixel units comprising a thin film transistor, an organic light-emitting diode and a bottom plate of a storage capacitor; a pixel definition layer spacing apart two adjacent pixel units from each other; and a top plate of the storage capacitor provided on the pixel definition layer, the top plate of the storage capacitor being spaced apart from the bottom plate of the storage capacitor by the pixel definition layer. The bottom plate is arranged above a gate electrode of the thin film transistor and electrically connected to the gate electrode of the thin film transistor.

Claims

1. An active matrix organic light-emitting diode array substrate comprising:

a substrate;

a plurality of pixel units located on the substrate and arranged in an array, each of the plurality of pixel units comprising a thin film transistor, an organic light-emitting diode and a bottom plate of a storage capacitor, the bottom plate being arranged above a gate electrode of the thin film transistor and electrically connected to the gate electrode of the thin film transistor;

a pixel definition layer spacing apart two adjacent pixel units from each other; and

a top plate of the storage capacitor provided on the pixel definition layer, the top plate of the storage capacitor being spaced apart from the bottom plate of the storage capacitor by the pixel definition layer.

2. The array substrate according to claim 1, wherein a top electrode of the organic light-emitting diode and the top plate of the storage capacitor are made from the same material and located in the same layer.

3. The array substrate according to claim 1, wherein the bottom plate of the storage capacitor and a bottom electrode of the organic light-emitting diode are made from the same material and located in the same layer.

4. The array substrate according to claim 1, wherein the bottom plate of the storage capacitor and the gate electrode of the thin film transistor are electrically connected with each other through vias in a first insulation layer.

5. The array substrate according to claim 1, wherein in the pixel definition layer, the part of the pixel definition layer located between the bottom plate of the storage capacitor and the top plate of the storage capacitor has a minimum thickness.

6. The array substrate according to claim 1, wherein the material of the pixel definition layer comprises organic resin or silicon dioxide.

7. The array substrate according to claim 1, wherein the top plate of the storage capacitor is electrically connected to the top electrode of the organic light-emitting diode, or the organic light-emitting diode has a top electrode above the bottom plate of the storage capacitor and the part of the top electrode of the organic light-emitting diode facing the bottom plate severs as the top plate of the storage capacitor.

8. A display apparatus comprising the active matrix organic light-emitting diode array substrate according to claim 1.

9. A method for producing an active matrix organic light-emitting diode array substrate as claimed in claim 1, comprising the following steps of:

forming a thin film transistor of each pixel unit on a substrate;

forming a pattern of a bottom plate of a storage capacitor electrically connected with a gate electrode of the thin film transistor of each pixel unit;

forming a pattern of a pixel definition layer overlaying the bottom plate of the storage capacitor; and

forming a pattern of a top plate of the storage capacitor on the pixel definition layer.

10. The method according to claim 9, wherein the step of forming the pattern of the top plate of the storage capacitor on the pixel definition layer comprises:

forming a pattern of a top electrode of the organic light-emitting diode above the pixel definition layer, the top electrode of the organic light-emitting diode comprising a part which faces the bottom plate of the storage capacitor and servers as the top plate of the storage capacitor.

11. The method according to claim 9, further comprising:

forming a pattern of a bottom electrode of the organic light-emitting diode after the step of forming the thin film transistor of each pixel unit on the substrate, the pattern of the bottom electrode of the organic light-emitting diode and the pattern of the bottom plate of the storage capacitor being formed in the same patterning process.

12. The method according to claim 11, further comprising:

before forming the pattern of the bottom electrode of the organic light-emitting diode and the pattern of the bottom plate of the storage capacitor, forming a pattern of vias in a first insulation layer connecting the gate electrode of the thin film transistor with the bottom plate of the storage capacitor and a pattern of vias in a second insulation layer connecting a source electrode of the thin film transistor with the bottom electrode of the organic light-emitting diode in the same patterning process.

13. The method according to claim 9, wherein upon forming the pattern of the pixel definition layer, the part located between the bottom plate of the storage capacitor and the top plate of the storage capacitor is produced to have a minimum thickness.

14. The method according to claim 9, wherein the top plate of the storage capacitor is electrically connected to the top electrode of the corresponding organic light-emitting diode.

15. The array substrate according to claim 2, wherein the bottom plate of the storage capacitor and a bottom electrode of the organic light-emitting diode are made from the same material and located in the same layer.

16. The array substrate according to claim 2, wherein the bottom plate of the storage capacitor and the gate electrode of the thin film transistor are electrically connected with each other through vias in a first insulation layer.

17. The array substrate according to claim 3, wherein the bottom plate of the storage capacitor and the gate electrode of the thin film transistor are electrically connected with each other through vias in a first insulation layer.

18. The array substrate according to claim 15, wherein the bottom plate of the storage capacitor and the gate electrode of the thin film transistor are electrically connected with each other through vias in a first insulation layer.

19. The method according to claim 10, further comprising:

forming a pattern of a bottom electrode of the organic light-emitting diode after the step of forming the thin film transistor of each pixel unit on the substrate, the pattern of the bottom electrode of the organic light-emitting diode and the pattern of the bottom plate of the storage capacitor being formed in the same patterning process.

20. The method according to claim 16, further comprising:

before forming the pattern of the bottom electrode of the organic light-emitting diode and the pattern of the bottom plate of the storage capacitor, forming a pattern of vias in a first insulation layer connecting the gate electrode of the thin film transistor with the bottom plate of the storage capacitor and a pattern of vias in a second insulation layer connecting a source electrode of the thin film transistor with the bottom electrode of the organic light-emitting diode in the same patterning process.