Shallow junction photodiode for detecting short wavelength light
First Claim
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1. A photodiode having a top surface defined by at least one SiO2 layer comprising:
- a bulk wafer positioned below the top surface of the photodiode;
a first P doped zone within the bulk wafer, wherein the first P doped zone has a thickness of 2-5 μ
m;
a first P+ doped zone positioned between the top of the first P doped zone and the top of the photodiode;
an anode on the top surface of the photodiode; and
a cathode on a backside of the photodiode.
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Abstract
The present invention is a photodiode or photodiode array having improved ruggedness for a shallow junction photodiode which is typically used in the detection of short wavelengths of light. In one embodiment, the photodiode has a relatively deep, lightly-doped P zone underneath a P+ layer. By moving the shallow junction to a deeper junction in a range of 2-5 μm below the photodiode surface, the improved device has improved ruggedness, is less prone to degradation, and has an improved linear current.
197 Citations
11 Claims
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1. A photodiode having a top surface defined by at least one SiO2 layer comprising:
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a bulk wafer positioned below the top surface of the photodiode; a first P doped zone within the bulk wafer, wherein the first P doped zone has a thickness of 2-5 μ
m;a first P+ doped zone positioned between the top of the first P doped zone and the top of the photodiode; an anode on the top surface of the photodiode; and a cathode on a backside of the photodiode. - View Dependent Claims (2)
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3. A photodiode having a top surface defined by at least one SiO2 layer comprising:
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a bulk wafer positioned below the top surface of the photodiode; a first P doped zone within the bulk wafer, wherein the first P doped zone has a thickness of 2-5 μ
m;a first P+ doped zone positioned between the top of the first P doped zone and the top of the photodiode, wherein the first P+ doped zone and a portion of the first P doped zone is surrounded by P+ doped ring.
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4. A photodiode having a top surface defined by at least one SiO2 layer comprising:
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a bulk wafer positioned below the top surface of the photodiode; a first P doped zone within the bulk wafer, wherein the first P doped zone has a thickness of 2-5 μ
m;a first P+ doped zone positioned between the top of the first P doped zone and the top of the photodiode, and a first N+ region extending throughout the thickness of the bulk wafer. - View Dependent Claims (5, 6, 7, 8, 9, 10)
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11. A photodiode having a top surface defined by at least one SiO2 layer comprising:
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a bulk wafer positioned below the top surface of the photodiode; a first P doped zone within the bulk wafer, wherein the first P doped zone has a thickness of 2-5 μ
m;a first P+ doped zone positioned between the top of the first P doped zone and the top of the photodiode; an anode on the top surface of the photodiode; a cathode on the top surface of the photodiode; and a cathode on a backside of the photodiode.
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Specification