Semiconductor switch
First Claim
1. A semiconductor switch, comprising:
- a support substrate;
an insulating layer on the support substrate;
a semiconductor layer on the insulating layer; and
i-th first switches, where i is an integer value 1 to n, where n is an integer of 2 or more, on the semiconductor layer and configured to switch conduction between a common node and a respective i-th input-output node, whereinat least one i-th first switch includes a plurality of first metal-oxide-semiconductor field effect transistors (MOSFETs) connected in series between the common node and the respective i-th input-output node, andeach of the plurality of first MOSFETs includes;
a plurality of first gate electrodes extending in a first direction along the semiconductor layer;
a second gate electrode extending in a second direction intersecting the first direction, each of the plurality of first gate electrodes having a first end contacting the second gate electrode and a second end distal in the first direction from the second gate electrode;
a first region of the semiconductor layer having a first conductivity type between, in the second direction, the plurality of first gate electrodes;
a second region of the semiconductor layer having the first conductivity type on a side of the second gate electrode opposite to the plurality of first gate electrodes in the first direction;
a first wiring in each of the plurality of first regions and extending in the first direction;
a second wiring in the second region, connected to every other end portion of the plurality of first wirings, and extending in the second direction; and
a contact that electrically connects the second region and the second wiring.
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Accused Products
Abstract
In an embodiment, semiconductor switch includes first switches switching conduction between input-output nodes and a common node. One of the first switches includes a plurality of first transistors connected in series between an input and output node and the common node. Each of the plurality of first transistors includes first gate electrodes, a second gate electrode, a first and second region in a semiconductor layer having a same conduction type. The first gate electrodes extend in parallel in a first direction. The second gate electrode extending in a direction crossing the first direction and is connected to one end of the first gate electrodes. The second region in the semiconductor layer is disposed on a side of the second gate electrode opposite to the first gate electrodes.
15 Citations
13 Claims
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1. A semiconductor switch, comprising:
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a support substrate; an insulating layer on the support substrate; a semiconductor layer on the insulating layer; and i-th first switches, where i is an integer value 1 to n, where n is an integer of 2 or more, on the semiconductor layer and configured to switch conduction between a common node and a respective i-th input-output node, wherein at least one i-th first switch includes a plurality of first metal-oxide-semiconductor field effect transistors (MOSFETs) connected in series between the common node and the respective i-th input-output node, and each of the plurality of first MOSFETs includes; a plurality of first gate electrodes extending in a first direction along the semiconductor layer; a second gate electrode extending in a second direction intersecting the first direction, each of the plurality of first gate electrodes having a first end contacting the second gate electrode and a second end distal in the first direction from the second gate electrode; a first region of the semiconductor layer having a first conductivity type between, in the second direction, the plurality of first gate electrodes; a second region of the semiconductor layer having the first conductivity type on a side of the second gate electrode opposite to the plurality of first gate electrodes in the first direction; a first wiring in each of the plurality of first regions and extending in the first direction; a second wiring in the second region, connected to every other end portion of the plurality of first wirings, and extending in the second direction; and a contact that electrically connects the second region and the second wiring. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor switch, comprising:
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a support substrate; an insulating layer on the support substrate; a semiconductor layer on the insulating layer; i-th first switches, where i is an integer value 1 to n, where n is an integer of 2 or more, on the semiconductor layer and configured to switch conduction between a common node and a respective i-th input-output node, wherein at least one i-th first switch includes a plurality of first metal-oxide-semiconductor field effect transistors (MOSFETs) connected in series between the common node and the respective i-th input-output node, and each of the plurality of first MOSFETs includes; a plurality of first gate electrodes extending in a first direction along the semiconductor layer; a second gate electrode extending in a second direction intersecting the first direction, each of the plurality of first gate electrodes having a first end contacting the second gate electrode and a second end distal in the first direction from the second gate electrode; a first region of the semiconductor layer having a first conductivity type between, in the second direction, the plurality of first gate electrodes; and a second region of the semiconductor layer having the first conductivity type on a side of the second gate electrode opposite to the plurality of first gate electrodes in the first direction, wherein a j-th one of the i-th first switches, where j is an integer value of 2 to n, that does not include a plurality of first MOSFETs, includes; a plurality of second MOSFETs that are connected in series between the common node and a respective j-th one of the i-th input-output nodes, each of the plurality of second MOSFETs having a first diode connected between a body and a gate; and i-th second switches on the semiconductor layer and configured to switch conduction between a reference potential node and the respective i-th input-output node, wherein the i-th second switches include; a plurality of third MOSFETs connected in series between the reference potential node and the respective i-th input-output node, each of the plurality of third MOSFETs having a second diode connected between a body and a gate, wherein the number of first MOSFETs in the plurality of first MOSFETs in the at least one i-th first switch is greater than the number of second MOSFETs in the plurality of second MOSFETs in the j-th one of the i-th first switches, and the number of first MOSFETs in the plurality of first MOSFETs of the at least one of the i-th first switch is greater than the number of third MOSFETs in the plurality of third MOSFETs. - View Dependent Claims (9, 10)
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11. A semiconductor switch, comprising:
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a support substrate; an insulating layer on the support substrate; a semiconductor layer on the insulating layer; i-th first switches, where i is an integer value 1 to n, where n is an integer of 2 or more, on the semiconductor layer and configured to switch conduction between a common node and a respective i-th input-output node, wherein at least one i-th first switch includes a plurality of first metal-oxide-semiconductor field effect transistors (MOSFETs) connected in series between the common node and the respective i-th input-output node, and each of the plurality of first MOSFETs includes; a plurality of first gate electrodes extending in a first direction along the semiconductor layer; a second gate electrode extending in a second direction intersecting the first direction, each of the plurality of first gate electrodes having a first end contacting the second gate electrode and a second end distal in the first direction from the second gate electrode; a first region of the semiconductor layer having a first conductivity type between, in the second direction, the plurality of first gate electrodes; and a second region of the semiconductor layer having the first conductivity type on a side of the second gate electrode opposite to the plurality of first gate electrodes in the first direction, wherein a j-th one of the i-th first switches, where j is an integer value of 2 to n, that does not include a plurality of first MOSFETs, includes; a plurality of second MOSFETs that are connected in series between the common node and a respective j-th one of the i-th input-output nodes, each of the plurality of second MOSFETs having a first diode connected between a body and a gate; and i-th second switches on the semiconductor layer and configured to switch conduction between a reference potential node and the respective i-th input-output node, wherein the i-th second switches include; a plurality of third MOSFETs connected in series between the reference potential node and the respective i-th input-output node, each of the plurality of third MOSFETs having a second diode connected between a body and a gate, wherein a gate voltage when the plurality of first MOSFETs are in a non-conduction state is greater than a gate voltage when the plurality of second MOSFETs are in a non-conduction state, and the gate voltage when the plurality of first MOSFETs are in the non-conduction state is greater than a gate voltage when the plurality of third MOSFETs are in a non-conduction state. - View Dependent Claims (12, 13)
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Specification