Semiconductor device and fabricating method thereof

  • US 9,704,970 B2
  • Filed: 05/26/2016
  • Issued: 07/11/2017
  • Est. Priority Date: 02/26/2014
  • Status: Active Grant
First Claim
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1. A method of fabricating semiconductor device comprising:

  • forming a dummy gate structure with a dummy gate electrode and source/drain regions adjacent to the dummy gate structure over a substrate;

    depositing an etch stop layer over the source/drain regions;

    depositing a protective layer over the etch stop layer;

    depositing an interlayer dielectric layer over the etch stop layer;

    annealing the interlayer dielectric layer;

    forming a metal gate structure by replacing part of the dummy gate structure;

    depositing an isolation layer over the metal gate structure;

    forming a contact opening through the interlayer dielectric layer to expose the source/drain regions; and

    forming a contact plug in the contact opening and on the metal gate structure.

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