Storage device having nonvolatile memory device and write method
First Claim
1. A method of storing write data in a storage device including a nonvolatile memory device having a memory cell array of nonvolatile memory cells, the method comprising:
- receiving write data in conjunction with a write request indicating a write operation;
in response to the write request, detecting a number of free blocks available in the memory cell array;
if the detected number of free blocks is less than a threshold value, allocating a log block only in accordance with a sub-block unit, and if the detected number of free blocks is not less than the threshold value, allocating the log block in accordance with one of the sub-block unit and a physical block unit, wherein the sub-block unit is smaller than the physical block unit; and
executing the write operation for the write data according to the log block,wherein the memory cell array is a three-dimensional memory cell array, andwherein the sub-block unit corresponds to an erase unit of the memory cell array.
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Abstract
Disclosed is a method of writing data in a storage device including a nonvolatile memory device. The method includes receiving write data with a write request, detecting a number of free blocks, if the detected number of free blocks is less than a threshold value, allocating a log block only in accordance with a sub-block unit, but if the detected number of free blocks is not less than the threshold value, allocating the log block in accordance with one of the sub-block unit and a physical block unit, wherein the sub-block unit is smaller than the physical block unit.
15 Citations
20 Claims
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1. A method of storing write data in a storage device including a nonvolatile memory device having a memory cell array of nonvolatile memory cells, the method comprising:
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receiving write data in conjunction with a write request indicating a write operation; in response to the write request, detecting a number of free blocks available in the memory cell array; if the detected number of free blocks is less than a threshold value, allocating a log block only in accordance with a sub-block unit, and if the detected number of free blocks is not less than the threshold value, allocating the log block in accordance with one of the sub-block unit and a physical block unit, wherein the sub-block unit is smaller than the physical block unit; and executing the write operation for the write data according to the log block, wherein the memory cell array is a three-dimensional memory cell array, and wherein the sub-block unit corresponds to an erase unit of the memory cell array. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of storing write data in a storage device including a nonvolatile memory device having a memory cell array of nonvolatile memory cells, the method comprising:
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receiving write data in conjunction with a write request indicating a write operation; in response to the write request, determining a number of bad blocks among a plurality of memory blocks in the memory cell array; if the number of bad blocks is greater than a threshold value, allocating a log block only in accordance with a sub-block unit, and if the number of bad blocks is not greater than the threshold value, allocating the log block in accordance with one of the sub-block unit and a physical block unit, wherein the sub-block unit is smaller than the physical block unit; and executing the write operation for the write data according to the log block, wherein the memory cell array is a three-dimensional memory cell array, and wherein the sub-block unit corresponds to an erase unit of the memory cell array. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification