Light emitting diode and method of fabricating the same

  • US 9,716,210 B2
  • Filed: 04/17/2015
  • Issued: 07/25/2017
  • Est. Priority Date: 01/05/2010
  • Status: Active Grant
First Claim
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1. A light emitting diode, comprising:

  • an n-type contact layer;

    a p-type contact layer disposed over the n-type contact layer;

    an active region disposed between the n-type contact layer and the p-type contact layer and comprising a multi-quantum well structure including a quantum well layer that includes a composition ratio of Indium (In) and a barrier layer;

    a superlattice layer including a plurality of layers, disposed near the active region; and

    a spacer layer including a plurality of layers disposed between the superlattice layer and the n-type contact layer and having a bandgap smaller than that of the barrier layer and greater than that of the quantum well layer.

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