CMOS image sensor with shared sensing node

• US 9,728,574 B2
• Filed: 01/03/2014
• Issued: 08/08/2017
• Est. Priority Date: 01/31/2005
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV), Carl Zeiss AG (Carl-Zeiss-Stiftung), Tarsium B.V.
• Original Assignee: ASML Netherlands BV (ASML Holding NV), Carl Zeiss AG (Carl-Zeiss-Stiftung)
• Inventors: Kwon, Oh-Bong
• Primary Examiner(s): Chavez, Renee
• Application Number:
  US14/147,021
• Publication Number:
  US 20140117209A1
• Time in Patent Office: 1,313 Days
• Field of Search: 2502081, 257292, 257359, 257445, 257462, 348241, 348294, 348300, 348302, 348308
• CPC Class Codes: H01L 27/14641 Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H04N 25/00 Circuitry of solid-state image sensors [SSIS]; Control thereof
• CPC Class Codes: H04N 25/59 by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
• CPC Class Codes: H04N 25/77 Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

Abstract

A CMOS image sensor has a pixel array provided with a plurality of unit pixels arranged in a matrix shape of rows and columns. Each of the unit pixels includes a photocharge generation means for generating photocharges by absorbing an external light; and a sensing node for receiving the photocharges transferred from the photocharge generation means, wherein the sensing node of the unit pixel in a previous scan line is shared with a sensing node of a unit pixel in a current scan line in response to a line select signal of the current line.

Claims

1. A method, comprising:

generating photocharge at a first pixel of an image sensor, the first pixel having a transfer transistor and a first sensing node for storing the photocharge connected to the transfer transistor, the image sensor also having a second pixel having a second sensing node for storing photocharge;

electrically coupling the first sensing node and the second sensing node;

transferring the photocharge generated at the first pixel to the first sensing node of the first pixel via the transfer transistor and to the second sensing node of the second pixel of the image sensor, wherein the first pixel is in a first line and the second pixel is in a second line adjacent to the first line; and

generating, based on the photocharge transferred to the first sensing node and the second sensing node, an output signal that is indicative of the photocharge generated at the first pixel.

2. The method of claim 1, wherein the transferring is performed in response to one or more select signals.

3. The method of claim 1, wherein the electrically coupling comprises selectively electrically coupling the first sensing node to the second sensing node prior to said transferring.

4. The method of claim 1, further comprising:

after said generating an output signal, decoupling the first sensing node from the second sensing node and electrically coupling the second sensing node to a third sensing node of a third pixel of the image sensor;

transferring photocharge generated by the third pixel to the second sensing node and the third sensing node; and

generating, based on photocharge transferred to the second sensing node and the third sensing node, another output signal that is indicative of the photocharge generated at the third pixel.

5. The method of claim 1, comprising:

applying a select signal to a gate of a transistor providing a source/drain pathway between the first sensing node and the second sensing node prior to said transferring; and

turning on the transistor and electrically coupling the first sensing node to the second sensing node in response to said applying.

6. The method of claim 1, further comprising resetting the first sensing node and the second sensing node to a reset level in response a reset signal for the first pixel.

7. The method of claim 1, further comprising:

applying a select signal to a gate of a select transistor; and

turning on the select transistor and transferring the output signal to an output line in response to said applying.

8. The method of claim 1, wherein providing an image sensor comprises providing a CMOS sensor.

9. A method, comprising:

producing photocharge with a first pixel of an image sensor in response to receiving light with the first pixel, the first pixel having a transfer transistor and a first sensing node connected to the transfer transistor;

selectively electrically coupling the first sensing node of the first pixel to a second sensing node of a second pixel of the image sensor, wherein the first pixel is in an n^th line and the second pixel is in an n−

1^th line; and

receiving the photocharge at the first sensing node and the second sensing node.

10. The method of claim 9, further comprising generating, based on the photocharge received by the first sensing node and the second sensing node, an output signal indicative of light received by the first pixel.

11. The method of claim 9, further comprising scanning, row-by-row, using the image sensor, the image sensor comprising rows of image sensor pixels to generate output signals indicative of light received by the rows of image sensor pixels, wherein said scanning comprises:

in response to scanning a row of image sensor pixels that includes the first pixel, generating, based on the photocharge received by the first sensing node and the second sensing node, an output signal indicative of light received by the first pixel; and

in response to scanning a previous row of image sensor pixels that includes the second pixel, generating another output signal indicative of light received by the second pixel.

12. The method of claim 11, wherein said scanning the row of image sensor pixels that includes the first pixel occurs after said scanning the previous row of image sensor pixels that includes the second pixel.

13. The method of claim 9, further comprising generating a row select signal that selects a row of image sensor pixels that includes the first pixel, wherein said selectively electrically coupling occurs in response to the row select signal.

14. The method of claim 9, further comprising scanning, column-by-column, using the image sensor, the image sensor comprising columns of image sensor pixels to generate output signals indicative of light received by the columns of image sensor pixels, wherein said scanning comprises:

in response to scanning a column of image sensor pixels that includes the first pixel, generating, based on the photocharge received by the first sensing node and the second sensing node, an output signal indicative of light received by the first pixel; and

in response to scanning a previous column of image sensor pixels that includes the second pixel, generating another output signal indicative of light received by the second pixel.

15. The method of claim 14, wherein said scanning the column of image sensor pixels that includes the first pixel occurs after said scanning the previous column of image sensor pixels that includes the second pixel.

16. The method of claim 9, wherein providing an image sensor comprises providing a CMOS sensor.

17. A method, comprising:

integrating photocharge with a pixel array that includes a plurality of sensing pixels arranged in a matrix of rows and columns;

selecting a first row of sensing pixels from the plurality of sensing pixels in response to a select signal;

connecting a first sensing node of a first sensing pixel in the first row with a second sensing node of a second sensing pixel in a second row of sensing pixels in response to the select signal;

transferring photocharge from a photodiode of the first sensing pixel to both the first sensing node and the second sensing node; and

generating an output signal indicative of the photocharge transferred to the first sensing node and the second sensing node.

18. The method of claim 17, further comprising after said generating an output signal, selecting a third row of sensing pixels from the plurality of sensing pixels in response to another select signal;

connecting a third sensing node of a third sensing pixel in the third row with the first sensing node in the first row in response to the other select signal;

transferring photocharge from another photodiode of the third sensing pixel to both the first sensing node and the third sensing node; and

generating another output signal indicative of the photocharge transferred to the first sensing node and the third sensing node.

19. The method of claim 17, wherein said connecting comprises:

applying the select signal to a gate of a transistor providing a source/drain pathway between the first sensing node and the second sensing node; and

turning on the transistor in response to said applying.

20. The method of claim 17, further comprising resetting the first sensing node and the second sensing node to a reset level in response to a reset signal for the first sensing pixel.

21. The method of claim 17, further comprising:

applying a reset signal to a gate of a reset transistor providing a source/drain pathway between a first power terminal and the first sensing node; and

turning on the reset transistor and resetting the first sensing node and the second sensing node to a reset level in response to said applying.

22. The method of claim 17, further comprising:

applying the select signal to a gate of a select transistor; and

turning on the select transistor and transferring the output signal to an output line in response to said applying.

23. The method of claim 17, wherein the first sensing node of the first sensing pixel is connected to a transfer transistor of the first sensing pixel.

24. A method, comprising:

integrating photocharge with a pixel array that includes a plurality of sensing pixels arranged in a matrix of rows and columns;

selecting a first row of sensing pixels from the plurality of sensing pixels by activating an addressing unit;

selectively electrically coupling a first sensing node of a first sensing pixel in the first row with a second sensing node of a second sensing pixel in a second row of sensing pixels by activating a switching device;

transferring photocharge from a photodiode of the first sensing pixel to both the first sensing node and the second sensing node; and

generating an output signal indicative of the photocharge transferred to the first sensing node and the second sensing node.

25. The method of claim 24, wherein the addressing unit and the switching device are activated in response to a common signal.

26. The method of claim 25, wherein the common signal is inputted to the addressing unit and the switching device.

27. The method of claim 26, wherein the addressing unit and the switching device are MOS transistors.

28. The method of claim 27, wherein the common signal is inputted to the respective gates of the addressing unit and the switching device.

29. The method of claim 25, wherein the common signal is a row select signal.

30. An imaging system comprising:

an image sensor; and

an external system in communication with the image sensor, wherein the external system comprises a control interface and a data interface, the external system configured to generate signals that control the operation of said image sensor via the control interface;

wherein said image sensor comprises;

an interface unit in communication with said external system to control operation of the image sensor; and

a pixel array having a first pixel with a first sensing node for receiving photocharge, the first sensing node being coupled to a transfer transistor, and a second pixel with a second sensing node for receiving photocharge, the second sensing node being coupled to the transfer transistor, wherein the first pixel is in a first line and the second pixel is in a second line adjacent to the first line, wherein the pixel array is configured to;

generate photocharge at the first pixel,

transfer the photocharge generated at the first pixel to the first sensing node and to the second sensing node via at least the transfer transistor; and

generate, based on the photocharge transferred to the first sensing node and the second sensing node, an output signal that is indicative of the photocharge generated at the first pixel.

31. The system of claim 30, wherein the external system receives image data from the image sensor via the data interface.

32. The system of claim 30, further comprising a clock providing one or more timing signals to the image sensor.

33. The imaging system of claim 30, wherein the imaging sensor comprises a CMOS sensor.