BAW resonator having lateral energy confinement and methods of fabrication thereof

  • US 9,735,755 B2
  • Filed: 10/06/2015
  • Issued: 08/15/2017
  • Est. Priority Date: 08/20/2015
  • Status: Active Grant
First Claim
Patent Images

1. A Bulk Acoustic Wave (BAW) resonator, comprising:

  • a piezoelectric layer;

    a first electrode on a first surface of the piezoelectric layer;

    a second electrode on a second surface of the piezoelectric layer opposite the first electrode on the first surface of the piezoelectric layer;

    a passivation layer on a surface of the second electrode opposite the piezoelectric layer within an active region of the BAW resonator, the passivation layer having a thickness (TPA) within the active region of the BAW resonator; and

    one or more material layers on the second surface of the piezoelectric layer adjacent to the second electrode in an outer region of the BAW resonator, the outer region of the BAW resonator being a region outside of the active region of the BAW resonator and the one or more material layers having a thickness that is n times the thickness (TPA) of the passivation layer within the active region, wherein;

    n is a value other than 1; and

    n is within a range of values for which a density of mechanical energy in the outer region of the BAW resonator is reduced as compared to a density of mechanical energy in the outer region of the BAW resonator when n is equal to 1.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×