Reconfigurable multi-stack inductor
First Claim
1. A method of forming a reconfigurable multi-stack inductor structure within a semiconductor structure having a first and a second metal layer, the method comprising:
- forming, within the first metal layer, a first inductor structure;
forming, within the first metal layer, a first ground shielding structure that is electrically isolated from and circumferentially bounds the first inductor structure;
forming, within the second metal layer, a second inductor structure;
electrically coupling the first inductor structure and second inductor structure;
forming, within the second metal layer, a second ground shielding structure that is electrically isolated from and circumferentially bounds the second inductor structure;
electrically grounding the first and the second ground shielding structure to generate a first inductance value;
electrically floating the first and the second ground shielding structure to generate a second inductance value; and
forming, within a third metal layer of the semiconductor structure, a ground plane; and
forming a first switch for electrically coupling the first and the second ground shielding structure to the ground plane.
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Accused Products
Abstract
A reconfigurable multi-stack inductor formed within a semiconductor structure may include a first inductor structure located within a first metal layer of the semiconductor structure, a first ground shielding structure located within the first metal layer that is electrically isolated from and circumferentially bounds the first inductor structure, and a second inductor structure located within a second metal layer of the semiconductor structure, whereby the second inductor structure is electrically coupled to the first inductor structure. A second ground shielding structure located within the second metal layer is electrically isolated from and circumferentially bounds the second inductor structure, whereby the first and second inductor generate a first inductance value based on the first ground shielding structure and second ground shielding structure being coupled to ground, and the first and second inductor generate a second inductance value based on the first ground shielding structure and second ground shielding structure electrically floating.
18 Citations
6 Claims
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1. A method of forming a reconfigurable multi-stack inductor structure within a semiconductor structure having a first and a second metal layer, the method comprising:
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forming, within the first metal layer, a first inductor structure; forming, within the first metal layer, a first ground shielding structure that is electrically isolated from and circumferentially bounds the first inductor structure; forming, within the second metal layer, a second inductor structure; electrically coupling the first inductor structure and second inductor structure; forming, within the second metal layer, a second ground shielding structure that is electrically isolated from and circumferentially bounds the second inductor structure; electrically grounding the first and the second ground shielding structure to generate a first inductance value; electrically floating the first and the second ground shielding structure to generate a second inductance value; and forming, within a third metal layer of the semiconductor structure, a ground plane; and forming a first switch for electrically coupling the first and the second ground shielding structure to the ground plane. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification