Amorphous silicon photoelectric device and fabricating method thereof

• US 9,741,893 B2
• Filed: 08/23/2013
• Issued: 08/22/2017
• Est. Priority Date: 03/29/2013
• Status: Active Grant

• Current Assignee: Beijing BOE Optoelectronics Technology Co Ltd. (BOE Technology Group Co., Ltd.), BOE Technology Group Co., Ltd.
• Original Assignee: Beijing BOE Optoelectronics Technology Co Ltd. (BOE Technology Group Co., Ltd.), BOE Technology Group Co., Ltd.
• Inventors: Xie, Zhenyu, Chen, Xu, Xu, Shaoying
• Primary Examiner(s): HSIEH, HSIN YI
• Application Number:
  US14/357,722
• Publication Number:
  US 20150179869A1
• Time in Patent Office: 1,460 Days
• Field of Search: 438 59
• CPC Class Codes: H01L 27/1443 with at least one potential jump or surface barrier
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
• CPC Class Codes: H01L 27/14676 X-ray, gamma-ray or corpuscular radiation imagers measuring X-, gamma- or corpuscular radiation G01T1/00
• CPC Class Codes: H01L 27/14687 Wafer level processing
• CPC Class Codes: H01L 27/14692 Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
• CPC Class Codes: H01L 31/03762 including only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table

Abstract

An amorphous-silicon photoelectric device and a fabricating method thereof are disclosed. The amorphous-silicon photoelectric device includes: a substrate; a thin-film transistor and a photosensor with the photodiode structure, which are provided at different positions on the substrate; and a contact layer; in which the contact layer is located below the photosensor, and the contact layer is partially covered by the photosensor, moreover, the contact layer and the gate-electrode layer in the thin-film transistor are provided in a same layer and of a same material. According to the technical solutions of the present disclosure, the fabricating procedure of an a-Si photoelectric device can be simplified, thereby improving the fabrication efficiency and reducing costs.

Claims

1. A fabricating method of an amorphous-silicon photoelectric device, comprising steps of:

performing a first patterning process so that patterns of a gate-electrode layer, a photosensor with a photodiode structure and a contact layer located below the photosensor are formed on a substrate, the photosensor being completely located above the contact layer, the contact layer being partially covered by the photosensor, the patterns of the gate-electrode layer including a gate-electrode, the contact layer and the gate-electrode being provided in a same layer and made of a same material;

performing a second patterning process, so that an insulating layer, a second semiconductor layer, and patterns of a source/drain-electrode layer are sequentially formed on a resultant substrate of the first patterning process; and

forming a first passivation layer on a resultant substrate of the second patterning process, and performing a third patterning process so that a first via-hole is formed in the first passivation layer to expose partial regions of the contact layer, the photosensor, and the source/drain-electrode layer.

2. The method according to claim 1, further comprising steps of:

performing a fourth patterning process so that an electrically-conductive layer is formed on a resultant substrate of the third patterning process, and the electrically-conductive layer covering the first via-hole and a region of the second semiconductor layer located between a source electrode and a drain electrode, and connecting the contact layer and the source electrode or the drain electrode in the source/drain-electrode layer.

3. The method according to claim 2, further comprising steps of:

forming a second passivation layer on a resultant substrate of the fourth patterning process, and performing a fifth patterning process so that a second via-hole is formed in the second passivation layer to at least expose a partial region of a gate line; and

performing a sixth patterning process so that a first transparent electrically-conductive layer is formed on a resultant substrate of the fifth patterning process to cover the second via-hole.

4. The method according to claim 1, wherein the step of performing the first patterning process comprises steps of:

forming the gate-electrode layer, a first semiconductor layer, a second transparent electrically-conductive layer and a photoresist on the substrate; and

performing an exposure-and-development-process, an etching process and an ashing process on a resultant substrate of the step of forming the gate-electrode layer, the first semiconductor layer, the second transparent electrically-conductive layer and the photoresist on the substrate so that the gate-electrode and the photosensor are formed.

5. The method according to claim 4, wherein the step of performing the exposure-and-development-process comprises steps of:

performing a partial exposing process on a photoresist located above the gate-electrode layer and a region of the contact layer which is not covered by the photosensor, so as to form a partially-exposed region;

performing no exposing process on a photoresist located above the photosensor, so as to form a non-exposed region; and

performing full exposing process on a photoresist located in regions other than the partially-exposed region and the non-exposed region so as to form a fully-exposed region.

6. The method according to claim 5, wherein the steps of performing the etching process and the ashing process comprises steps of:

performing an etching process on the second transparent electrically-conductive layer in the photosensor with the photodiode structure so as to etch off the second transparent electrically-conductive layer in the fully-exposed region;

performing an etching process on the first semiconductor layer in the photosensor with the photodiode structure so as to etch off the first semiconductor layer in the photosensor with the photodiode structure in the fully-exposed region;

performing an etching process on the gate-electrode layer so as to etch off the gate-electrode layer in the fully-exposed region;

removing the photoresist in the partially-exposed region in the ashing process;

performing an etching process on the second transparent electrically-conductive layer in the photosensor with the photodiode structure so as to etch off the second transparent electrically-conductive layer in the partially-exposed region;

performing an etching process on the first semiconductor layer in the photosensor with the photodiode structure so as to etch off the first semiconductor layer in the photosensor with the photodiode structure in the partially-exposed region; and

stripping off a residual photoresist on the substrate completely.

7. The method according to claim 2, wherein the step of performing the first patterning process comprises following steps of:

forming the gate-electrode layer, a first semiconductor layer, a second transparent electrically-conductive layer and a photoresist on the substrate; and

performing an exposure-and-development-process, an etching process and an ashing process on a resultant substrate of the step of forming the gate-electrode layer, the first semiconductor layer, the second transparent electrically-conductive layer and the photoresist on the substrate so that the gate-electrode, a gate-line contact layer and the photosensor are formed.

8. The method according to claim 7, wherein the step of performing the exposure-and-development-process comprises steps of:

performing a partial exposing process on a photoresist located above the gate-electrode layer, and a region of the contact layer which is not covered by the photosensor, so as to form a partially-exposed region;

performing no exposing process on a photoresist located above the photosensor, so that the photoresist located above the photosensor remains as a non-exposed region; and

performing full exposing process on a photoresist located in regions other than the partially-exposed region and the non-exposed region so as to form a fully-exposed region.

9. The method according to claim 8, wherein the steps of performing the etching process and the ashing process comprises steps of:

performing an etching process on the second transparent electrically-conductive layer in the photosensor with the photodiode structure so as to etch off the second transparent electrically-conductive layer in the fully-exposed region;

performing an etching process on the first semiconductor layer in the photosensor with the photodiode structure so as to etch off the first semiconductor layer in the photosensor with the photodiode structure in the fully-exposed region;

performing an etching process on the gate-electrode layer so as to etch off the gate-electrode layer in the fully-exposed region;

removing the photoresist in the partially-exposed region in the ashing process;

performing an etching process on the second transparent electrically-conductive layer in the photosensor with the photodiode structure so as to etch off the second transparent electrically-conductive layer in the partially-exposed region;

performing an etching process on the first semiconductor layer in the photosensor with the photodiode structure so as to etch off the first semiconductor layer in the photosensor with the photodiode structure in the partially-exposed region; and

stripping off a residual photoresist on the substrate completely.

10. The method according to claim 3, wherein the step of performing the first patterning process comprises following steps of:

forming the gate-electrode layer, a first semiconductor layer, a second transparent electrically-conductive layer and a photoresist on the substrate; and

performing an exposure-and-development-process, an etching process and an ashing process on a resultant substrate of the step of forming the gate-electrode layer, the first semiconductor layer, the second transparent electrically-conductive layer and the photoresist on the substrate so that the gate-electrode, a gate-line contact layer and the photosensor are formed.

11. The method according to claim 10, wherein the step of performing the exposure-and-development-process comprises steps of:

performing a partial exposing process on a photoresist located above the gate-electrode layer, and a region of the contact layer which is not covered by the photosensor, so as to form a partially-exposed region;

performing no exposing process on a photoresist located above the photosensor, so as to form a non-exposed region; and

performing full exposing process on a photoresist located in regions other than the partially-exposed region and the non-exposed region so as to form a fully-exposed region.

12. The method according to claim 11, wherein the steps of performing the etching process and the ashing process comprises steps of:

performing an etching process on the second transparent electrically-conductive layer in the photosensor with the photodiode structure so as to etch off the second transparent electrically-conductive layer in the fully-exposed region;

performing an etching process on the first semiconductor layer in the photosensor with the photodiode structure so as to etch off the first semiconductor layer in the photosensor with the photodiode structure in the fully-exposed region;

performing an etching process on the gate-electrode layer so as to etch off the gate-electrode layer in the fully-exposed region;

removing the photoresist in the partially-exposed region in the ashing process;

performing an etching process on the second transparent electrically-conductive layer in the photosensor with the photodiode structure so as to etch off the second transparent electrically-conductive layer in the partially-exposed region;

performing an etching process on the first semiconductor layer in the photosensor with the photodiode structure so as to etch off the first semiconductor layer in the photosensor with the photodiode structure in the partially-exposed region; and

stripping off a residual photoresist on the substrate completely.