System and method for driving radio frequency switch

• US 9,742,400 B2
• Filed: 05/06/2015
• Issued: 08/22/2017
• Est. Priority Date: 05/06/2015
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Bakalski, Winfried, Steltenpohl, Anton, Taddiken, Hans
• Primary Examiner(s): Cole, Brandon S
• Application Number:
  US14/705,518
• Publication Number:
  US 20160329891A1
• Time in Patent Office: 839 Days
• Field of Search: 327365-508
• CPC Class Codes: H03K 17/693 Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors logic circuits H03K19/00; code converters H03M5/00, H03M7/00

Abstract

In accordance with an embodiment, a radio frequency (RF) switching circuit includes a plurality of series connected RF switch cells comprising a load path and a control node, a plurality of first gate resistors coupled between control nodes of adjacent RF switch cells, and an input resistor having a first end coupled to a control node of one of the plurality of RF switch cells and a second end configured to an output of a switch driver. Each of the plurality of series connected RF switch cells includes a switch transistor.

Claims

1. A radio frequency (RF) switching circuit comprising:

a plurality of series connected RF switch cells comprising a load path and a control node, wherein each of the plurality of series connected RF switch cells comprises a switch transistor and

an impedance element, wherein an impedance of the impedance element decreases from a first RF switch cell at a first end of the plurality of series connected RF switch cells to a last RF switch cell at a second end of the plurality of series connected RF switch cells, the plurality of series RF connected switch cells comprises a first terminal coupled to a load path of the first RF switch cell at the first end of the plurality of series connected RF switch cells, and a second terminal coupled to a load path of the last RF switch cell at the second end of the plurality of series connected RF switch cells, the impedance element of each RF switch cell-comprises a parallel capacitor coupled in parallel with the load path of the switch transistor of the RF switch cell, and a capacitance of the parallel capacitor of the first RF switch cell is greater than a capacitance of the parallel capacitor of the last RF switch cell, the impedance element of each RF switch cell-comprises a parallel capacitor coupled in parallel with the load path of the switch transistor of the RF switch cell, and a capacitance of the parallel capacitor of the first RF switch cell is greater than a capacitance of the parallel capacitor of the last RF switch cell;

a plurality of first gate resistors coupled between control nodes of adjacent RF switch cells; and

an input resistor having a first end coupled to a control node of one of the plurality of RF switch cells and a second end configured to an output of a switch driver.

2. The RF switching circuit of claim 1, wherein each RF switch cell further comprises a load path resistor coupled in parallel with the load path of the RF switch cell.

3. The RF switching circuit of claim 1, wherein the first end of the input resistor is coupled to the control node of the first RF switch cell.

4. The RF switching circuit of claim 1, wherein the first end of the input resistor is coupled to a control node of an intermediate RF switch cell, wherein an equal number of RF switch cells are coupled between the intermediate RF switch cell and the first terminal, and between the intermediate RF switch cell and the second terminal.

5. The RF switching circuit of claim 4, wherein the impedance element of each RF switch cell comprises a second gate resistor having a first end coupled to a gate of the switch transistor and a second end coupled to the control node of the RF switch cell.

6. The RF switching circuit of claim 5, wherein at least a portion of the second gate resistors of the plurality of RF switch cells and at least a portion the plurality of first gate resistors form an R-2R ladder.

7. The RF switching circuit of claim 6, wherein:

each RF switch cell further comprises a load path resistor coupled in parallel with the load path of the RF switch cell; and

the RF switching circuit further comprising a ground resistor coupled between a load path of one of the RF switch cells and ground.

8. The RF switching circuit of claim 1, wherein the parallel capacitor comprises a metal-insulator-metal (MIM) capacitor.

9. The RF switching circuit of claim 1, wherein the capacitance of the parallel capacitor linearly decreases from the first RF switch cell to the last RF switch cell.

10. A radio frequency (RF) switching circuit comprising:

a first plurality of series connected resistors;

a second plurality of shunt resistors having first ends coupled between resistors of the first plurality of series connected resistors;

an input coupling resistor having a first end coupled to a center tap of the first plurality of series connected resistors;

a plurality of series connected transistors coupled between a first RF switch terminal and a second RF switch terminal, each of the plurality of series connected transistors having control nodes coupled to respective ends of the second plurality of shunt resistors, wherein

a resistance of each of the first plurality of series connected resistors successively decreases from the center tap toward an end of the first plurality of series connected resistors; and

a resistance of each of the second plurality of shunt resistors successively decreases from a first shunt resistor of the second plurality of shunt resistors coupled to the center tap to a first transistor coupled to the first RF switch terminal and successively decreases from the first shunt resistor of the second plurality of shunt resistors coupled to the center tap to a last transistor coupled to the second RF switch terminal.

11. The RF switching circuit of claim 10, further comprising a third plurality of resistors coupled in parallel to a corresponding load path of each of the plurality of series connected transistors.

12. The RF switching circuit of claim 11, further comprising a bias resistor having a first end coupled to one of the plurality of series connected transistors and a second end coupled to a reference voltage node.

13. The RF switching circuit of claim 10, wherein the first plurality of series connected resistors and the second plurality of shunt resistors form an R-2R ladder.

14. The RF switching circuit of claim 10, wherein:

a first shut resistor coupled between the center tap and a center transistor of the plurality of series connected transistors comprises a first resistance;

series resistors of the first plurality of series connected resistors coupled to the center tap comprise a resistance of about one-half the first resistance;

succeeding series resistors of the first plurality of series connected resistors immediately adjacent to preceding series resistors comprise a resistance of about one-half of the preceding series resistors;

shunt resistors of the second plurality of shunt resistors immediately adjacent to the first shunt resistor comprises a resistance of about one-half the first resistance; and

succeeding shunt resistors of the second plurality of shunt resistors immediately adjacent to preceding shunt resistors comprise a resistance of about one-half of the preceding shunt resistors.

15. The RF switching circuit of claim 10, wherein:

a first shut resistor coupled between the center tap and a center transistor of the plurality of series connected transistors comprises a first resistance;

series resistors of the first plurality of series connected resistors coupled to the center tap comprise a second resistance;

succeeding series resistors of the first plurality connected of series resistors immediately adjacent to preceding series resistors comprise a resistance of about one-half of the preceding series resistors;

shunt resistors of the second plurality of shunt resistors immediately adjacent to the first shunt resistor comprise the second resistance; and

succeeding shunt resistors of the second plurality of shunt resistors immediately adjacent to preceding shunt resistors comprise a resistance of about one-half of the preceding shunt resistors.

16. The RF switching circuit of claim 15, further comprising:

a third plurality of resistors coupled in parallel to a corresponding load path of each of the plurality of series connected transistors; and

a bias resistor having a first end coupled to one of the plurality of series connected transistors and an second end coupled to a reference voltage node.

17. The RF switching circuit of claim 16, wherein:

the input coupling resistor has a resistance of about 12 KΩ

;

the first resistance is about 100 KΩ

;

the second resistance is about 100 KΩ

;

each of the third plurality of resistors comprises a resistance of about 40 KΩ

; and

the bias resistor comprises a resistance of about 500 KΩ

.

18. The RF switching circuit of claim 10, further comprising a driver circuit coupled to a second end of the input coupling resistor.

19. The RF switching circuit of claim 18, further comprising an antenna coupled to at least one of the first RF switch terminal and the second RF switch terminal.

20. The RF switching circuit of claim 10, wherein the first plurality of series connected resistors, the second plurality of shunt resistors, the input coupling resistor, and the plurality of series connected transistors are disposed on a single integrated circuit.

21. A method of operating a radio frequency (RF) switching circuit comprising a plurality of series connected RF switch cells having a load path and a control node, and an input resistor having a first end coupled to a control node of one of the plurality of RF switch cells, and a plurality of first gate resistors coupled between control nodes of adjacent RF switch cells, wherein each of the plurality of series connected RF switch cells comprises a switch transistor, and the method comprises:

turning-on the RF switching circuit comprising applying an activation voltage to a second end of the input resistor, wherein the activation voltage corresponds to an on-voltage of the switch transistors of the RF switch cells; and

turning-off the RF switching circuit comprising applying a de-activation voltage to a second end of the input resistor, wherein the de-activation voltage corresponds to an off-voltage of the switch transistors of the RF switch cells, wherein

each RF switch cell further comprises a second gate resistor having a first end coupled to a gate of the switch transistor and a second end coupled to the control node of the RF switch cell;

resistances of the first gate resistors coupled closer to the input resistor are higher than resistances of the first gate resistors coupled farther from the input resistor; and

resistances of the second gate resistors coupled closer to the input resistor are higher than resistances of the second gate resistors coupled farther from the input resistor.

22. The method of claim 21, further comprising applying an RF voltage to a first end of the plurality of series connected RF switch cells, wherein the RF voltage is substantially evenly distributed across each of the plurality of RF switch cells.

23. The method of claim 21,

wherein a rise time at a gate of each transistor is within 20% of each other.